NTE NTE461

NTE461
Silicon N−Channel JFET Transistor
Dual, Matched Pair
DC Amp/Sampler/Chopper
Features:
D High Input Impedance: IG < 50pA
D Minimum System Error and Calibrations
D TO−71 Case Style
Absolute Maximum Ratings:
Gate Drain or Gate Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −50V
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30mA
Device Dissipation (TA = +25°C, Each Side) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250mW
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.67mW/°C
Total Device Dissipation (TA = +25°C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400mW
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.67mW/°C
Storage Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65° to +200°C
Lead Temperature (During Soldering, 1/16” from case for 30sec) . . . . . . . . . . . . . . . . . . . . . . +300°C
Electrical Characteristics: (TA = +25°C, unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
−50
−
−
V
−
−
−100
pA
VDG = 15V, ID = 0.5nA
−0.5
−
−4.5
V
VDS = 15V, VGS = 0
0.5
−
8.0
mA
−
−
−50
pA
1500
−
6000 µmhos
Static Characteristics
Gate−Source Breakdown Voltage
Gate Reverse Current
Gate−Source Cutoff Voltage
V(BR)GSS
IGSS
VGS(off)
IG = −1µA, VDS = 0
VGS = −30V, VDS = 0
Saturation Drain Current
IDSS
Gate Operating Current
IG
VDG = 15V, ID = 200µA
Forward Transcondutance
gfs
g = 1kHz
Input Capacitance
Ciss
VDS = 15V, VGS = 0
−
−
6
pF
Reverse Transfer Capacitance
Crss
VDS = 15V, VGS = 0
−
−
2
pF
Dynamic Characteristics
Electrical Characteristics (Cont’d): (TA = +25°C, unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
−
−
5
nA
0.95
−
1.0
ID = 50µA
−
−
15
mV
ID = 200µA
−
−
15
mV
VDG = 15V, TA = +25°C/TB = +125°C
200µA
ID = 200µA,
TA = −55°C/TB = +25°C
Note 2
−
−
40
µV/°C
−
−
40
µV/°C
gfs1/gfs2
0.95
−
1.0
gos1−gos2
−
−
3
Matching Characteristics
Differential Gate Current
IG1−IG2
VDG = 15V, ID = 200µA, TA = +25°C
Saturation Drain Current Ratio
IDSS1/IDSS2 VDS = 15V, VGS = 0, Note 1
Differential Gate−Source Voltage
VGS1−VGS2 VGD = 15V
Gate−Source Voltage
Differential Drift
Transconductance Ratio
Differential Output Conductance
Note 1. Assumes smaller value in numerator.
Note 2. Measured at end points, TA and TB.
.230 (5.84) Dia Max
.195 (4.95) Dia Max
.190
(4.82)
.500
(12.7)
Min
.018 (0.45) Dia
.100 (2.54) Dia
.050 (1.27)
2
3
1
45°
5
6
7
.038 (0.96)
.041 (1.04)
Pin4 and Pin8 are Omitted
All Leads are Isolated from Case
Pin 1
Pin 2
Pin 3
Pin 5
Pin 6
Pin 7
S1
D1
G1
S2
D2
G2
µmhos