NTE461 Silicon N−Channel JFET Transistor Dual, Matched Pair DC Amp/Sampler/Chopper Features: D High Input Impedance: IG < 50pA D Minimum System Error and Calibrations D TO−71 Case Style Absolute Maximum Ratings: Gate Drain or Gate Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −50V Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30mA Device Dissipation (TA = +25°C, Each Side) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250mW Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.67mW/°C Total Device Dissipation (TA = +25°C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400mW Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.67mW/°C Storage Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65° to +200°C Lead Temperature (During Soldering, 1/16” from case for 30sec) . . . . . . . . . . . . . . . . . . . . . . +300°C Electrical Characteristics: (TA = +25°C, unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit −50 − − V − − −100 pA VDG = 15V, ID = 0.5nA −0.5 − −4.5 V VDS = 15V, VGS = 0 0.5 − 8.0 mA − − −50 pA 1500 − 6000 µmhos Static Characteristics Gate−Source Breakdown Voltage Gate Reverse Current Gate−Source Cutoff Voltage V(BR)GSS IGSS VGS(off) IG = −1µA, VDS = 0 VGS = −30V, VDS = 0 Saturation Drain Current IDSS Gate Operating Current IG VDG = 15V, ID = 200µA Forward Transcondutance gfs g = 1kHz Input Capacitance Ciss VDS = 15V, VGS = 0 − − 6 pF Reverse Transfer Capacitance Crss VDS = 15V, VGS = 0 − − 2 pF Dynamic Characteristics Electrical Characteristics (Cont’d): (TA = +25°C, unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit − − 5 nA 0.95 − 1.0 ID = 50µA − − 15 mV ID = 200µA − − 15 mV VDG = 15V, TA = +25°C/TB = +125°C 200µA ID = 200µA, TA = −55°C/TB = +25°C Note 2 − − 40 µV/°C − − 40 µV/°C gfs1/gfs2 0.95 − 1.0 gos1−gos2 − − 3 Matching Characteristics Differential Gate Current IG1−IG2 VDG = 15V, ID = 200µA, TA = +25°C Saturation Drain Current Ratio IDSS1/IDSS2 VDS = 15V, VGS = 0, Note 1 Differential Gate−Source Voltage VGS1−VGS2 VGD = 15V Gate−Source Voltage Differential Drift Transconductance Ratio Differential Output Conductance Note 1. Assumes smaller value in numerator. Note 2. Measured at end points, TA and TB. .230 (5.84) Dia Max .195 (4.95) Dia Max .190 (4.82) .500 (12.7) Min .018 (0.45) Dia .100 (2.54) Dia .050 (1.27) 2 3 1 45° 5 6 7 .038 (0.96) .041 (1.04) Pin4 and Pin8 are Omitted All Leads are Isolated from Case Pin 1 Pin 2 Pin 3 Pin 5 Pin 6 Pin 7 S1 D1 G1 S2 D2 G2 µmhos