NTE342 Silicon NPN Transistor RF Power Output (PO = 6W, 175MHz) Description: The NTE342 is a silicon NPN epitaxial planer type transistor designed for RF power amplifiers on VHF band mobile radio applications. Features: D High Power Gain: Gpe ≥ 10dB (VCC = 13.5V, PO = 6W, f = 175MHz) D Ability to Withstand more than 20:1 VSWR Load when Operated at: VCC = 15.2V, PO = 6W, f = 175MHz Application: D 4 to 5 Watt Output Power Amplifiers Applications in VHF band Absolute Maximum Ratings: (TC = +25°C unless otherwise specified) Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35V Collector–Emitter Voltage (RBE = ∞), VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17V Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A Collector Dissipation, PC TA = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5W TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12.5W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83°C/W Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10°C/W Electrical Characteristics: (TC = +25°C unless otherwise specified) Symbol Parameter Test Conditions Min Typ Max Unit Breakdown Voltage Emitter to Base V(BR)EBO IE = 5mA, IC = 0 4 – – V Breakdown Voltage Collector to Base V(BR)CBO IC = 10mA, IE = 0 35 – – V Breakdown Voltage Collector to Emitter V(BR)CEO IC = 50mA, RBE = ∞ 17 – – V Collector Cutoff Current ICBO VCB = 25V, IE = 0 – – 500 µA Emitter Cutoff Current IEBO VEB = 3V, IC = 0 – – 500 µA DC Forward Current Gain hFE VCE = 10V, IC = 100mA, Note 1 10 50 180 – Output Power PO 6 7 – W Collector Efficiency ηC VCC = 13.5V, Pin = 600mW, f = 175MHz 60 70 – % Note 1. Pulse Test: Pulse Width = 150µs, Duty Cycle = 5%. .358 (9.1) .126 (3.2) .051 (1.3) .142 (3.62) Dia E .485 (12.32) .395 (9.05) B E C .189 (4.8) .485 (12.32) Min .100 (2.54) .019 (0.48) .177 (4.5) .347 (9.5) .122 (3.1)