NTE2521 Silicon NPN Transistor Video Output for HDTV Features: D High Gain Bandwidth Product: fT = 400MHz Typ D High Breakdown Voltage: VCEO ≥ 250V Min D High Current D Low Reverse Transfer Capacitance and Excellent HF Response Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector to Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250V Collector to Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250V Emitter to Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mA Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600mA Collector Dissipation, PC TA = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.3W TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Collector Cutoff Current ICBO VCB = 150V, IE = 0 – – 0.1 µA Emitter Cutoff Current IEBO VEB = 2V, IC = 0 – – 0.1 µA DC Current Gain hFE VCE = 10V, IC = 50mA 60 – 320 VCE = 10V, IC = 250mA 20 – – VCE = 30V, IC = 100mA – 400 – MHz Gain Bandwidth Product fT Output Capacitance Cob VCB = 30V, f = 1MHz – 4.2 – pF Reverse Transfer Capacitance Cre VCB = 30V, f = 1MHz – 3.4 – pF Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Collector–Emitter Saturation Voltage VCE(sat) IC = 50mA, IB = 5mA – – 1.0 V Base–Emitter Saturation Voltage VBE(sat) IC = 50mA, IB = 5mA – – 1.0 V Collector–Base Breakdown Voltage V(BR)CBO IC = 10µA, IE = 0 250 – – V Collector–Emitter Breakdown Voltage V(BR)CEO IC = 1mA, RBE = ∞ 250 – – V Emitter–Base Breakdown Voltage V(BR)EBO IE = 100µA, IC = 0 3 – – V .315 (8.0) .130 (3.3) .118 (3.0) Dia .433 (11.0) .295 (7.5) E C B .610 (15.5) .094 (2.4)