NTE478 Silicon NPN Transistor RF Power Output, PO = 100W @ 175MHz Description: The NTE478 is a 12.5 Volt epitaxial silicon NPN planar transistor designed primarily for VHF communications. This device utilizes diffused emitter resistors to achieve infinite VSWR under operating conditions, and is internally input matched to optimize power gain and efficiency over the band. Features: D Designed for VHF Military and Commercial Equipment D 100W Min with Greater than 6.0dB Gain D Withstands Infinite VSWR under Operating Conditions D Low Intermodulation Distortion (–32dB) D Diffused Emitter Resistors Absolute Maximum Ratings: (TC = +25°C unless othrwise specified) Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18V Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V Maximum Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A Total Device Dissipation (At +25°C), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 270W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +200°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65°C/W Electrical Characteristic: (TC = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit V(BR)CEO IC = 100mA, IB = 0, Note 1 18 – – V V(BR)CES IC = 100mA, VBE = 0, Note 1 36 – – V V(BR)EBO IE = 10mA, iC = 0 4 – – V mA Static Collector–Emitter Breakdown Voltage Emitter–Base Breakdown Voltage Collector Cutoff Current ICBO VCB = 12V, IE = 0 – – 10 DC Current Gain hFE VCE = 6V, IC = 5A 10 – – Note 1. Pulsed through 25mH indicator. Electrical Characteristic (Cont’d): (TC = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Static Output Power PO VCE = 12.5V, f = 175MHz 100 – – W Power Gain PG VCE = 12.5V, f = 175MHz 6 7 – dB Impedance Zs VCE = 12.5V, Pi = 20W, f = 175MHz – 1.5– j0.9 – Ω – 0.5– j0.1 – Ω – 354 – pF Zcl Output Capacitance Cob VCB = 12V, IE = 0, f = 1MHz .205 (5.18) E .215 (5.48) .122 (3.1) Dia B .405 (10.3) Min C E .155 (3.94) .500 (12.7) Dia .005 (0.15) .270 (6.85) .160 (4.06) .725 (18.43) .975 (24.78)