NTE NTE483

NTE483
Silicon NPN Transistor
RF Power Output for Mobile Use,
PO = 18W @ 866MHz
Description:
The NTE483 is a 12.5 Volt epitaxial silicon NPN planer transistor designed for primarily for 800MHz
mobile communications. This device utilizes matched input technology (Tuned Q) to increase bandwidth and power gain over the complete range of 806–866MHz.
Features:
D Designed for 806–866MHz Mobile Equipment
D 18W Min., with Greater than 6dB Gain at 836MHz
D Withstands 10:1 VSWR at Rated Operating Conditions
D Matched Input Technology
D Common Base
Absolute Maximum Ratings: (TC = +25°C unless othrwise specified)
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V
Maximum Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7A
Total Device Dissipation (At +25°C), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +200°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.8°C/W
Electrical Characteristic: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
V(BR)CEO IC = 50mA, IB = 0, Note 1
16
–
–
V
V(BR)CES IC = 50mA, VBE = 0, Note 1
36
–
–
V
V(BR)EBO IE = 10mA, iC = 0
4
–
–
V
mA
Static
Collector–Emitter Breakdown Voltage
Emitter–Base Breakdown Voltage
Collector Cutoff Current
ICES
VCE = 15V, VBE = 0
–
–
10
DC Current Gain
hFE
VCE = 6V, IC = 1A
20
–
–
Note 1. Pulsed through 25mH indicator.
Electrical Characteristic (Cont’d): (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Dynamic
Output Power
PO
VCE = 12.5V, f = 836MHz
18
–
–
W
Power Gain
PG
VCE = 12.5V, f = 836MHz
6
–
–
dB
Impedance
Zs
VCE = 12.5V, Pi = 15W, f = 836MHz
–
3.0– j4.8
–
Ω
–
1.6– j2.5
–
Ω
–
20
–
pF
Zcl
Output Capacitance
Cob
VCB = 12.5V, IE = 0, f = 1MHz
.725 (18.42)
.325 (8.28) Max
.195 (4.97) Max
.130 (3.3) Dia
B
C
.960
(24.38)
Max
E
B
.225 (5.72) Max
.380 (5.72) Dia Max
.285
(7.25)
Max
.180
(4.57)
Max
.730 (18.54)
.960 (24.38) Max