NTE471 Silicon NPN Transistor RF Power Output PO = 100W @ 30MHz Description: The NTE471 is a 28V epitaxial silicon NPN planar transistor designed primarily for SSB communications. This device utilizes state–of–the–art diffused emitter ballasting for improved ruggedness and reliability. Features: D Better than 15dB Gain at 30MHz and 100W (CW/PEP) D Diffused Emitter Ballasting D Withstands Infinite Mismatch at Operating Conditions D Low Inductance Stripline Package D Frequency = 30MHz D Power Out = 100 Watts D Voltage = 28 Volts D Power Gain = 15dB Absolute Maximum Ratings: (TC = +25°C unless otherweise specified) Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65V Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V Maximum Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A Total Device Dissipation (TC = +25°C), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 270W Maximum Junction Temperatures, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +200°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65°C/W Electrical Characteristics: (TC = +25°C unless otherwise specified) Parameter Collector Cutoff Current Collector–Emitter Breakdown Voltage Emitter–Base Breakdown Voltage DC Current Gain Symbol Min Typ Max Unit – – 15 mA V(BR)CEO IC = 100mA, IB = 0, Note 1 36 – – V V(BR)CES IC = 100mA, VBE = 0, Note 1 65 – – V V(BR)EBO IE = 10mA, IC = 0 4 – – V ICES Test Conditions VCE = 30V, VBE = 0 hFE VCE = 5V, IC = 5A 10 50 – Power Output PO VCE = 28V, f = 30MHz 100 – – W Power Gain Pg VCE = 28V, f = 30MHz 15.6 16.0 – dB Capacitance Cob VEB = 30V, IE = 0, f = 1MHz – pF Dynamic Characteristics – 250 Note 1. Pulsed through a 25mH inductor. .725 (18.42) E C B E .127 (3.17) Dia (2 Holes) .250 (6.35) .225 (5.72) 1.061 (26.95) Ceramic Cap .480 (12.1) Dia .260 (6.6) .065 (1.68) .975 (24.77) .095 (2.42)