NTE NTE484

NTE484
Silicon NPN Transistor
RF Power Output for Mobile Use,
PO = 25W @ 947MHz
Description:
The NTE484 is a 12.5 Volt epitaxial silicon NPN planer transistor designed for primarily for 800MHz
mobile communications. This device is internally input matched in the common base configuration
for extremely broadband performance and optimum gain characteristics.
Features:
D Designed for 800 MHz Mobile Communications Equipment
D 25W Min., with Greater than 5dB Gain at 836MHz
D Withstands Infinite VSWR at Rated Operating Conditions
D Internal Input matched “Tuned Q”
D Common Base Configuration
Absolute Maximum Ratings: (TC = +25°C unless othrwise specified)
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V
Maximum Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A
Total Device Dissipation (At +25°C), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +200°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.3°C/W
Electrical Characteristic: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
V(BR)CEO IC = 50mA, IB = 0, Note 1
16
–
–
V
V(BR)CES IC = 50mA, VBE = 0, Note 1
36
–
–
V
V(BR)EBO IE = 10mA, IC = 0
4
–
–
V
mA
Static
Collector–Emitter Breakdown Voltage
Emitter–Base Breakdown Voltage
Collector Cutoff Current
ICES
VCE = 15V, VBE = 0
–
–
10
DC Current Gain
hFE
VCE = 6V, IC = 1A
20
–
–
Note 1. Pulsed through 25mH indicator.
Electrical Characteristic (Cont’d): (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Dynamic
Output Power
PO
VCE = 12.5V, f = 836MHz
25
–
–
W
Power Gain
PG
VCE = 12.5V, f = 836MHz
5
–
–
dB
Impedance
Zs
VCE = 12.5V, PO= 25W, f = 836MHz
–
4.9– j5.8
–
Ω
–
1.4– j3.5
–
Ω
–
–
65
pF
Zcl
Output Capacitance
Cob
VCB = 12.5V, IE = 0, f = 1MHz
.725 (18.42)
.325 (8.28) Max
.195 (4.97) Max
.130 (3.3) Dia
B
C
.960
(24.38)
Max
E
B
.225 (5.72) Max
.380 (5.72) Dia Max
.285
(7.25)
Max
.180
(4.57)
Max
.730 (18.54)
.960 (24.38) Max