NTE63 Silicon NPN Transistor High Gain, Low Noise Amp Description: The NTE63 is a silicon NPN high frequency transistor designed primarily for use in high–gain, low noise tuned and wiseband small–signal amplifiers and applications requiring fast switching times. Features: D High Current Gain–Bandwidth Product: fT = 5GHz Typ @ f = 1GHz D High Power Gain: Gpe = 12.5dB Min @ f = 1GHz Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12V Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40mA Total Device Dissipation (TL = +50°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400mW Derate Above 50°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.0mW/°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C Thermal Resistance, Junction–to–Lead, RthJL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250°C/W Electrical Characteristics: (TC = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics Collector–Emitter Breakdown Voltage V(BR)CEO IC = 1mA, IB = 0 12 – – V Collector–Base Breakdown Voltage V(BR)CBO IC = 0.1mA, IE = 0 20 – – V Emitter–Base Breakdown Voltage V(BR)EBO IE = 0.1mA, IC = 0 2 – – V – – 50 nA Collector Cutoff Current ICBO VCB = 15V, IE = 0 Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit ON Characteristics DC Current Gain hFE IC = 30mA, VCE = 10V 30 – 200 fT IC = 30mA, VCE = 10V, f = 1GHz – 5.0 – GHz VCB = 10V, IE = 0, f = 1MHz – 0.6 1.0 pF IC = 5mA, VCE = 10V, f = 1GHz – 2.5 – dB IC = 5mA, VCE = 10V, f = 2GHz – 4.0 – dB IC = 5mA, VCE = 10V, f = 1GHz – 10 – dB IC = 5mA, VCE = 10V, f = 2GHz – 6 – dB IC = 30mA, VCE = 10V, f = 1GHz – 12.5 – dB IC = 30mA, VCE = 10V, f = 2GHz – 7.5 – dB Dynamic Characteristics Current Gain–Bandwidth Product Collector–Base Capacitance Ccb Functional Tests Noise Figure NFMIN Power Gain at Optimum Noise Figure Maximum Available Power Gain (Note 1) GNF Gmax Note1.Gmax = |S21|2 / (I – |S11|2) (I – |S22|2) .075 (1.9) Min C Seating Plane .770 (19.5) Max E E .190 (4.83) Dia .325 (8.27) Max B .036 (0.92)