NTE65 Silicon NPN Transistor High Voltage, Low Noise for CATV, MATV Description: The NTE65 is silicon NPN transistor designed primarily for use in high–gain, low–noise, small–signal amplifier and also used in applications requiring fast switching times. Features: D High Current–Gain Bandwidth Product D Low Noise Figure D High Power Gain Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15V Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30mA Total Device Dissipation (TA = +60°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 180mW Derate Above 60°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.0mW/°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C Thremal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500°C/W Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics Collector–Emitter Breakdown Voltage V(BR)CEO IC = 1mA, IB = 0 15 – – V Collector–Base Breakdown Voltage V(BR)CBO IC = 0.1mA, IE = 0 20 – – V Emitter–Base Breakdown Voltage V(BR)EBO IE = 0.1mA, IC = 0 3 – – V nA Collector Cutoff Current ICBO VCB = 10V, IE = 0 – – 50 hFE VCE = 10V, IC = 14mA 25 – 250 ON Characteristics DC Current Gain Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit VCE = 10V, IC = 14mA, f = 0.5GHz – 5.0 – GHz Ccb VCB = 10V, IE = 0, f = 1MHz – 0.5 1.0 pF NF VCE = 10V, IC = 2mA, f = 0.5GHz – 2.4 – dB VCE = 10V, IC = 2mA, f = 1.0GHz – 3.0 – dB VCE = 10V, IC = 2mA, f = 0.5GHz – 15 – dB VCE = 10V, IC = 2mA, f = 1.0GHz – 10 – dB VCE = 10V, IC = 2mA, f = 0.5GHz – 18 – dB VCE = 10V, IC = 2mA, f = 1.0GHz – 12 – dB Dynamic Characteristics Current–Gain Bandwidth Product fT Collector–Base Capacitance Functional Tests Noise Figure Power Gain at Optimum Noise Figure GNF Gmax Maximum Available Power Gain (Note 1) |S21|2 G = max Note 1. (I – |S11|2) (I – |S22|2) .205 (5.2) Dia Max .039 (1.0) .005 (0.15) .098 (2.5) .197 (5.0) Collector .354 (9.0) Emitter Base .197 5.0) .147 (3.75) Max