NTE NTE278

NTE278
Silicon NPN Transistor
Broadband RF Amp
Description:
The NTE278 is a silicon NPN transistor in a TO39 type package designed specifically for broadband
applications requiring good linearity. Usable as a high frequency current mode switch to 200mA.
Features:
D Low Noise Figure: NF = 3.0dB Typ @ f = 200MHz
D High Current–Gain Bandwidth Product: fT = 1200MHz Min @ IC = 50mA
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3V
Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400mA
Continuous Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400mA
Total Device Dissipation (TC = +75°C, Note 1), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20mW/°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Note 1. Total Device Dissipation at TA = +25°C is 1 Watt.
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
VCEO(sus) IC = 5mA, IB = 0
20
–
–
V
VCER(sus) IC = 5mA, RBE = 10Ω, Note 2
40
–
–
V
OFF Characteristics
Collector–Emitter Sustaining Voltage
Collector Cutoff Current
Emitter Cutoff Current
ICEO
VCE = 15V, IB = 0
–
–
20
µA
ICEX
VCE = 15V, VBE = –1.5V, TC = +150°C
–
–
5
mA
VCE = 35V, VBE = –1.5V
–
–
5
mA
VBE = 3V, IC = 0
–
–
100
µA
IEBO
Note 2. Pulsed through a 25mH inductor; 50% Duty Cycle.
Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
IC = 360mA, VCE = 5V
5
–
–
IC = 50mA, VCE = 15V
40
–
120
1200
–
–
MHz
ON Characteristics
DC Current Gain
hFE
Dynamic Characteristics
Current–Gain Bandwidth Product
fT
IC = 50mA, VCE = 15V, f = 200MHz
Collector–Base Capacitance
Ccb
VCB = 15V, IE = 0, f = 1MHz
–
1.8
3.5
pF
Noise Figure
NF
IC = 10mA, VCE = 15V, f = 200MHz
–
3
–
dB
Common–Emitter Amplifier Voltage
Gain
Gve
IC = 50mA, VCC = 15V, f = 50 to 216MHz
11
–
–
dB
Power Input
Pin
IC = 50mA, VCC = 15V, RS = 50Ω,
Pout = 1.26mW, f = 200MHz
–
–
0.1
mW
Functional Test
.370 (9.39) Dia Max
.355 (9.03) Dia Max
.260
(6.6)
Max
.500
(12.7)
Min
.018 (0.45)
Base
Emitter
Collector/Case
45°
.031 (.793)