NTE64 Silicon NPN Transistor UHF High Speed Switch Description: The NTE64 is a silicon NPN high frequency transistor designed primarily for use in high–gain, low noise small–signal amplifiers and applications requiring fast switching times. Features: D High Current Gain–Bandwidth Product: fT = 4.5GHz Typ @ IC = 15mA D Low Noise Figure: NF = 2dB Typ @ f = 1GHz D High Power Gain: Gpe = 10dB Min @ f = 1GHz D Third Order Intercept: +23dBm Typ Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15V Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30mA Total Device Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.375W Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.3mW/°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300°C/W Electrical Characteristics: (TC = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics Collector–Emitter Breakdown Voltage V(BR)CEO IC = 1mA, IB = 0 15 – – V Collector–Base Breakdown Voltage V(BR)CBO IC = 0.1mA, IE = 0 25 – – V Emitter–Base Breakdown Voltage V(BR)EBO IE = 0.1mA, IC = 0 2 – – V – – 50 nA Collector Cutoff Current ICBO VCB = 15V, IE = 0 Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit ON Characteristics DC Current Gain hFE IC = 5mA, VCE = 5V 30 80 200 IC = 15mA, VCE = 10V, f = 1GHz – 4.5 – GHz Dynamic Characteristics Current Gain–Bandwidth Product fT Collector–Base Capacitance Ccb VCB = 10V, IE = 0, f = 1MHz – 0.4 1.0 pF Noise Figure NF IC = 5mA, VCE = 6V, f = 1GHz – 2.0 2.5 dB Gpe VCC = 6V, IC = 5mA, f = 1GHz 10 12 – dB IC = 5mA, VCE = 6V, f = 0.9GHz – +23 – dBm Functional Tests Common–Emitter Amplifier Power Gain Third Order Intercept .075 (1.9) Min C Seating Plane .770 (19.5) Max E E .190 (4.83) Dia .325 (8.27) Max B .036 (0.92)