NTE67 MOSFET N–Ch, Enhancement Mode High Speed Switch Description: The NTE67 is a TMOS Power FET in a TO220 type package designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. Features: D Lower RDS(ON) D Improved Inductive Ruggedness D Fast Switching Times D Lower Input Capacitance D Extended Safe Operating Area D Improved High Temperature Reliability Absolute Maximum Ratings: Drain–Source Voltage (TJ = +25°C to +150°C), VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V Drain–Gate Voltage (RGS = 1MΩ, TJ = +25°C to +125°C), VDGR . . . . . . . . . . . . . . . . . . . . . . . . . 400V Gate–Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±20V Continuous Drain Current, ID TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.5A TC = +100°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.0A Pulsed Drain Current (Note 2), IDM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18A Pulsed Gate Current, IGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±1.5A Single Pulsed Avalanche Energy (Note 3), EAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 290mJ Avalanche Current, IAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.5A Total Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75W Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.6W/°C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C Lead Temperature (During Soldering, 1/8” from case, 5sec max.), TL . . . . . . . . . . . . . . . . . . . +300°C Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.67K/W Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80K/W Thermal Resistance, Case–to–Sink (Mounting surface flat, smooth, and greased), RthCS 0.24K/W Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%. Note 2. Repetitive rating: Pulse width limited by max, junction temperature. Note 3. L = 17mH, Vdd = 50V, RG = 25Ω, Starting TJ = +25°C. Electrical Characteristics: (TC = +25°C unless otherwise specified) Parameter Symbol Drain–Source Breakdown Voltage BVDSS Gate Threshold Voltage VGS(th) Test Conditions Min Typ Max Unit VGS = 0V, ID = 250µA 400 – – V VDS = VGS, ID = 250µA 2.0 – 4.0 V Gate–Source Leakage, Forward IGSS VGS = 20V – – 100 nA Gate–Source Leakage, Reverse IGSS VGS = –20V – – –100 nA Zero Gate Voltage Drain Current IDSS VDS = Max. Rating, VGS = 0V – – 250 µA VDS = Max. Rating x 0.8, VGS = 0V, TC = +125°C – – 1000 µA 4.5 – – A – 1.0 1.5 Ω 2.9 4.4 – mhos – 780 – pF On–State Drain–Source Current Static Drain–Source On–State Resistance ID(on) VDS > ID(on) x RDS(on)max, VGS = 10V, Note 1 RDS(on) VGS = 10V, ID = 3A, Note 1 Forward Transconductance gfs VDS ≥ 50V, ID = 3A, Note 1 Input Capacitance Ciss VGS = 0V, VDS = 25V, f = 1MHz Output Capacitance Coss – 99 – pF Reverse Transfer Capacitance Crss – 43 – pF Turn–On Delay Time td(on) – 11 17 ns – 19 29 ns td(off) – 37 56 ns tf – 16 24 ns – 18 30 nC – 40 – nC – 14 – nC Min Typ Max Unit – – 4.5 A Rise Time tr Turn–Off Delay Time Fall Time Total Gate Charge (Gate–Source Plus Gate–Drain) Qg Gate–Source Charge Qgs Gate–Drain (“Miller”) Charge Qgd VDD = 0.5BVDSS, ID = 5.5A, ZO = 12Ω (MOSFET switching times are essentially independent of operating temperature) VGS = 10V, ID = 5.5A, VDS = 0.8 Max. Rating (Gate charge is essentially independent of operating temperature) Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%. Source–Drain Diode Ratings and Characteristics: Parameter Symbol Continuous Source Current (Body Diode) IS Test Conditions Pulse Source Current (Body Diode) ISM Note 2 – – 18 A Diode Forward Voltage VSD TC = +25°C, IS = 4.5A, VGS = 0V – – 1.6 V Reverse Recovery Time trr TJ = +25°C, IF = 5.5A, dIF/dt = 100A/µs – 310 660 ns Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%. Note 2. Repetitive rating: Pulse width limited by max, junction temperature. .420 (10.67) Max .110 (2.79) .147 (3.75) Dia Max .500 (12.7) Max .250 (6.35) Max .500 (12.7) Min .070 (1.78) Max Gate .100 (2.54) Source Drain/Tab