NTE2941 MOSFET N–Ch, Enhancement Mode High Speed Switch Features: D Low Static Drain–Source ON Resistance D Improved Inductive Ruggedness D Fast Switching Times D Low Input Capacitance D Extended Safe Operating Area D TO220 Type Isolated Package Absolute Maximum Ratings: Drain–Source Voltage (Note 1), VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Drain–Gate Voltage (RGS = 1MΩ, Note 1), VDGR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Gate–Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±20V Drain Current, ID Continuous TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28A TC = +100°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19.6A Pulsed (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200A Gate Current (Pulsed), IGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±1.5A Single Pulsed Avalanche Energy (Note 3), EAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48mJ Avalanche Current, IAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28A Total Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48W Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.52W/°C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +175°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +175°C Maximum Lead Temperature (During Soldering, 1/8” from case, 5sec), TL . . . . . . . . . . . . . . +300°C Thermal Resistance: Maximum Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.92K/W Typical Case–to–Sink (Mounting surface flat, smooth, and greased), RthCS . . . . . . . 0.5K/W Maximum Junction–to–Ambient (Free Air Operation), RthJA . . . . . . . . . . . . . . . . . . . . 62.5K/W Note 1. TJ = +25° to +175°C. Note 2. Repetitive Rating: Pulse width limited by maximum junction temperature. Note 3. L = 50µH, VDD = 25V, RG = 25Ω, Starting TJ = +25°C. Electrical Characteristics: (TC = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Drain–Source Breakdown Voltage BVDSS VGS = 0V, ID = 250µA 60 – – V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 2.0 – 4.0 V Gate–Source Leakage Forward IGSS VGS = 20V – – 100 nA Gate–Source Leakage Reverse IGSS VGS = –20V – – –100 nA Zero Gate Voltage Drain Current IDSS VDS = Max. Rating, VGS = 0 – – 250 µA VDS = 0.8 Max. Rating, TC = +150°C – – 1000 µA RDS(on) VGS = 10V, ID = 25A, Note 4 – – 0.028 Ω Forward Transconductance gfs VDS ≥ 50V, ID = 25A, Note 4 15 – – mho s Input Capacitance Ciss VGS = 0V, VDS = 25V, f = 1MHz – 2450 – pF Output Capacitance Coss – 740 – pF Reverse Transfer Capacitance Crss – 360 – pF Turn–On Delay Time td(on) – – 32 ns – – 210 ns td(off) – – 75 ns tf – – 130 ns – – 87 nC – 26.6 – nC – 30.6 – nC (Body Diode) – – 150 A Static Drain–Source ON Resistance Rise Time Turn–Off Delay Time Fall Time tr Total Gate Charge (Gate–Source Plus Gate–Drain) Qg Gate–Source Charge Qgs Gate–Drain (“Miller”) Charge Qgd VDD = 0.5 BVDSS, ID = 50A, ZO = 9.1Ω, (MOSFET switching times are essentially independent of operating temperature) VGS = 10V, ID = 50A, VDS = 0.8 Max. Rating, (Gate charge is essentially independent of operating temperature) Source–Drain Diode Ratings and Characteristics Continuous Source Current IS Pulse Source Current ISM (Body Diode) Note 2 – – 200 A Diode Forward Voltage VSD TJ = +25°C, IS = 50A, VGS = 0V, Note 4 – – 2.5 V Reverse Recovery Time trr TJ = +25°C, IF = 50A, dIF/dt = 100A/µs – – 250 ns Note 2. Repetitive Rating: Pulse width limited by maximum junction temperature. Note 4. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%. .402 (10.2) Max .224 (5.7) Max .122 (3.1) Dia .295 (7.5) .165 (4.2) .669 (17.0) Max G D S .531 (13.5) Min .100 (2.54) .059 (1.5) Max .173 (4.4) Max .114 (2.9) Max