NTE NTE2941

NTE2941
MOSFET
N–Ch, Enhancement Mode
High Speed Switch
Features:
D Low Static Drain–Source ON Resistance
D Improved Inductive Ruggedness
D Fast Switching Times
D Low Input Capacitance
D Extended Safe Operating Area
D TO220 Type Isolated Package
Absolute Maximum Ratings:
Drain–Source Voltage (Note 1), VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
Drain–Gate Voltage (RGS = 1MΩ, Note 1), VDGR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
Gate–Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±20V
Drain Current, ID
Continuous
TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28A
TC = +100°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19.6A
Pulsed (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200A
Gate Current (Pulsed), IGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±1.5A
Single Pulsed Avalanche Energy (Note 3), EAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48mJ
Avalanche Current, IAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28A
Total Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.52W/°C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +175°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +175°C
Maximum Lead Temperature (During Soldering, 1/8” from case, 5sec), TL . . . . . . . . . . . . . . +300°C
Thermal Resistance:
Maximum Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.92K/W
Typical Case–to–Sink (Mounting surface flat, smooth, and greased), RthCS . . . . . . . 0.5K/W
Maximum Junction–to–Ambient (Free Air Operation), RthJA . . . . . . . . . . . . . . . . . . . . 62.5K/W
Note 1. TJ = +25° to +175°C.
Note 2. Repetitive Rating: Pulse width limited by maximum junction temperature.
Note 3. L = 50µH, VDD = 25V, RG = 25Ω, Starting TJ = +25°C.
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Drain–Source Breakdown Voltage
BVDSS
VGS = 0V, ID = 250µA
60
–
–
V
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250µA
2.0
–
4.0
V
Gate–Source Leakage Forward
IGSS
VGS = 20V
–
–
100
nA
Gate–Source Leakage Reverse
IGSS
VGS = –20V
–
–
–100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = Max. Rating, VGS = 0
–
–
250
µA
VDS = 0.8 Max. Rating, TC = +150°C
–
–
1000
µA
RDS(on)
VGS = 10V, ID = 25A, Note 4
–
–
0.028
Ω
Forward Transconductance
gfs
VDS ≥ 50V, ID = 25A, Note 4
15
–
–
mho
s
Input Capacitance
Ciss
VGS = 0V, VDS = 25V, f = 1MHz
–
2450
–
pF
Output Capacitance
Coss
–
740
–
pF
Reverse Transfer Capacitance
Crss
–
360
–
pF
Turn–On Delay Time
td(on)
–
–
32
ns
–
–
210
ns
td(off)
–
–
75
ns
tf
–
–
130
ns
–
–
87
nC
–
26.6
–
nC
–
30.6
–
nC
(Body Diode)
–
–
150
A
Static Drain–Source ON Resistance
Rise Time
Turn–Off Delay Time
Fall Time
tr
Total Gate Charge
(Gate–Source Plus Gate–Drain)
Qg
Gate–Source Charge
Qgs
Gate–Drain (“Miller”) Charge
Qgd
VDD = 0.5 BVDSS, ID = 50A, ZO = 9.1Ω,
(MOSFET switching times are essentially
independent of operating temperature)
VGS = 10V, ID = 50A, VDS = 0.8 Max.
Rating, (Gate charge is essentially
independent of operating temperature)
Source–Drain Diode Ratings and Characteristics
Continuous Source Current
IS
Pulse Source Current
ISM
(Body Diode) Note 2
–
–
200
A
Diode Forward Voltage
VSD
TJ = +25°C, IS = 50A, VGS = 0V, Note 4
–
–
2.5
V
Reverse Recovery Time
trr
TJ = +25°C, IF = 50A, dIF/dt = 100A/µs
–
–
250
ns
Note 2. Repetitive Rating: Pulse width limited by maximum junction temperature.
Note 4. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
.402 (10.2) Max
.224 (5.7) Max
.122 (3.1)
Dia
.295
(7.5)
.165
(4.2)
.669
(17.0)
Max
G
D
S
.531
(13.5)
Min
.100 (2.54)
.059 (1.5) Max
.173 (4.4)
Max
.114 (2.9)
Max