NTE2383 MOSFET P–Channel Enhancement Mode, High Speed Switch (Compl to NTE2382) Description: The NTE2383 is a MOS power P–Channel FET in a TO220 type package designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid, and relay drivers. Features: D Lower RDS(ON) D Improved Inductive Ruggedness D Fast Switching Times D Rugged Polysilicon Gate Cell Structure D Lower Input Capacitance D Extended Safe Operating Area D Improved High Temperature Reliability Absolute Maximim Ratings: Drain–Source Voltage (Note 1), VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Drain–Gate Voltage (RGS = 1MΩ, Note 1), VDGR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Gate–Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±20V Continuous Drain Current, ID TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10.5A TC = +100°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.5A Drain Current, Pulsed (Note 3), IDM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42A Gate Current, Pulsed, IGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±1.5A Single Pulsed Avalanvhe Energy (Note 4), EAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 510mJ Avalanche Current, IAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10.5A Total Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75W Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.6W/°C Operating Junction Temperature Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62.5°C/W Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.67°C/W Thermal Resistance, Case–to–Sink (Note 5), RthCS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.5°C/W Maximum Lead Temperature (During Soldering, 1/8” from case, 5sec), TL . . . . . . . . . . . . . . +300°C Note Note Note Note Note 1. 2. 3. 4. 5. TJ = +25° to +150°C Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%. Repetitive rating: Pulse width limited by max. junction temperature. L = 8.5mH, VDD = 25V, RG = 25Ω, Starting TJ = +25°C. Mounting surface flat, smooth, and greased. Electrical Characteristics: (TC = +25°C unless otherwise specified) Parameter Drain–Source Breakdown Voltage Zero Gate Voltage Drain Current Symbol Test Conditions Min Typ Max Unit 100 – – V VDS = 100V, VGS = 0 – – 0.25 mA VDS = 80V, VGS = 0, TJ = +125°C – – 1.0 mA V(BR)DSS VGS = 0, ID = 0.25mA IDSS Gate–Body Leakage Current, Forward IGSS VGS = 20V – – 100 nA Gate–Body Leakage Current, Reverse IGSS VGS = 20V – – –100 nA 2.0 – 4.0 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 0.25mA Static Drain–Source On–Resistance rDS(on) VGS = 10V, ID = 5.3A, Note 2 – – 0.3 Ω Forward Transconductance gFS VDS ≤ 50V, ID = 5.3A, Note 2 2.0 – – mhos Input Capacitance Ciss VDS = 25V, VGS = 0, f = 1MHz – 835 – pF Output Capacitance Coss – 357 – pF Reverse Transfer Capacitance Crss – 94 – pF Turn–On Delay Time td(on) – – 60 ns – – 140 ns – – 140 ns – – 140 ns – – 58 nC – 12.6 – nC – 16.6 – ns – – 10.5 A Rise Time Turn–Off Delay Time Fall Time tr td(off) VDD = 50V, ID = 10.5A, ZO = 24Ω, MOSFET switching times are essentially independent of operating temperature tf Total Gate Charge Qg Gate–Source Charge Qgs Gate–Drain (“Miller”) Charge Qgd VGS = 10V, VDS = 80V, ID = 10.5A, Gate charge is essentially independent of operating temperature Source–Drain Diode Ratings and Characteristics Continuous Source Current (Body Diode) IS Pulse Source Current (Body Diode) ISM Note 3 – – 42 A Diode Forward Voltage VSD TJ = +25°C, IS = 10.5A, VGS = 0V, Note 2 – – 6.3 V Reverse Recovery Time trr TJ = +25°C, IF = 10.5A, dIF/dt = 100A/µs – – 300 ns Note 2. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%. Note 3. Repetitive rating: Pulse width limited by max. junction temperature. .420 (10.67) Max .110 (2.79) .147 (3.75) Dia Max .500 (12.7) Max .250 (6.35) Max .500 (12.7) Min .070 (1.78) Max Gate .100 (2.54) Source Drain/Tab