NTE NTE98

NTE98
Silicon NPN Transistor
HV Darlington Power Amp, Switch
Description:
The NTE98 is a silicon NPN Darlington transistor in a TO3 type package designed for high voltage,
high–speed, power switching in inductive circuits where fall–time is critical. They are particularly
suited for line operated switch–mode applications.
Applications:
D Switching Regulators
D Inverters
D Solenoid and Relay Drivers
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO(sus) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V
Collector–Emitter Voltage, VCEX(sus) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V
Collector–Emitter Voltage, VCEV . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 700V
Emitter–Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A
Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30A
Base Current, IB
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5A
Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.0A
Total Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 175W
Derate Above +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W/°C
Total Power Dissipation (TC = +100°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100W
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0°C/W
Lead Temperature (During Soldering, 1/8” from case, 5sec), TL . . . . . . . . . . . . . . . . . . . . . . . +275°C
Note 1. Pulse test: Pulse Width = 5ms, Duty Cycle ≤ 10%.
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max Unit
VCEO(sus) IC = 100mA, IB = 0, Vclamp = 500V
500
–
–
V
VCEX(sus)
IC = 2A, Vclamp = 500V, TC = +100°C
500
–
–
V
IC = 5A, Vclamp = 500V, TC = +100°C
375
–
–
V
VCEV = 700V, VBE(off) = 1.5V
–
–
0.25
mA
VCEV = 700V, VBE(off) = 1.5V, TC = +150°C
–
–
5.0
mA
ICER
VCE= 700V, RBE= 50Ω, TC = +100°C
–
–
5.0
mA
IEBO
VEB = 2V, IC = 0
–
–
175
mA
hFE
VCE = 5V, IC = 5A
40
–
400
VCE = 5V, IC = 10A
30
–
300
IC = 10A, IB = 500mA
–
–
2.0
V
IC = 10A, IB = 500mA, TC = +100°C
–
–
2.5
V
IC = 20A, IB = 2A
–
–
3.5
V
IC = 10A, IB = 500mA
–
–
2.5
V
IC = 10A, IB = 500mA, TC = +100°C
–
–
2.5
V
VF
IF = 5A, Note 3
–
3
5
V
Small–Signal Current Gain
hfe
VCE = 10V, IC = 1A, ftest = 1MHz
8
–
–
Output Capacitance
Cob
VCB = 50V, IE = 0, ftest = 100kHz
100
–
325
pF
–
0.12 0.25
µs
–
0.5
1.5
µs
OFF Characteristics (Note 2)
Collector–Emitter Sustaining Voltage
Collector Cutoff Current
Emitter Cutoff Current
ICEV
ON Characteristics (Note 3)
DC Current Gain
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
Diode Forward Voltage
VCE(sat)
VBE(sat)
Dynamic Characteristics
Switching Characteristics (Resistive Load)
Delay Time
td
Rise Time
tr
Storage Time
ts
–
0.8
2.0
µs
Fall Time
tf
–
0.2
0.6
µs
IC = 10A Peak, Vclamp = 250V,
IB1 = 500mA, VBE(off) = 5V, TC = +100°C
°
–
1.5
3.5
µs
–
0.36
1.6
µs
IC = 10A Peak, Vclamp = 250V,
IB1 = 500mA, VBE(off) = 5V, TC = +25°C
°
–
0.8
–
µs
–
0.18
–
µs
VCC = 250V, IC = 10A, IB1 = 500mA,
VBE(off) = 5V, tp = 50µs,
µ Duty Cycle ≤ 2%
Switching Characteristics (Inductive Load, Clamped)
Storage Time
tsv
Crossover Time
tc
Storage Time
tsv
Crossover Time
tc
Note 2. Pulse test: Pulse Width = 300µs, Duty Cycle ≤ 2%.
Note 3. The internal Collector–Emitter diode can eliminate the need for an external diode to clamp
inductive loads. Tests have shown that the Forward Recovery Voltage (VF) of this diode is
comparable to that of typical fast recovery rectifiers.
C
B
E
.135 (3.45) Max
.350 (8.89)
.875 (22.2)
Dia Max
Seating
Plane
.312 (7.93) Min
Emitter
.040 (1.02)
1.187 (30.16)
.665
(16.9)
.215 (5.45)
.156 (3.96) Dia
(2 Holes)
.430
(10.92)
.188 (4.8) R Max
Base
.525 (13.35) R Max
Collector/Case