ISSUED DATE :2005/01/12 REVISED DATE : GE13003 NPN SILICON POWER TRANSISTOR Description The GE13003 is designed for high voltage, high speed power switching inductive circuit where fall time is critical. It is particularly suited for 115 and 220v Switch-mode. Features Inductive Switching Matrix 0.5~1.5Amp, 25 and 100 700V Blocking Capability SOA and Switching Application Information tc @ 1A, 100 is 290ns(Typ) Package Dimensions Millimeter Min. Max. 4.40 4.80 0.76 1.00 0.36 0.50 8.60 9.00 9.80 10.4 14.7 15.3 6.20 6.60 REF. A b c D E L4 L5 REF. c1 b1 L e L1 Ø A1 Millimeter Min. Max. 1.25 1.45 1.17 1.47 13.25 14.25 2.54 REF. 2.60 2.89 3.71 3.96 2.60 2.80 Absolute Maximum Ratings at Ta = 25 Parameter Symbol Ratings Tj +150 Tstg -55 ~ +150 Junction Temperature Storage Temperature Unit Collector to Emitter Voltage VCEO(sus) 400 V Collector to Emitter Voltage VCEO 700 V Emitter to Base Voltage VEBO 9 V Collector Current -Continuous -Peak(1) IC ICM 1.5 3.0 A Base Current -Continuous -Peak(1) IB IBM 0.75 1.5 A Emitter Current -Continuous -Peak(1) IE IEM 2.25 4.5 A Total Power Dissipation at Ta=25 Derate above 25 PD 1.4 11.2 W mW/ Total Power Dissipation at Tc=25 Derate above 25 PD 40 320 W mW/ Thermal Characteristics Parameter Symbol Value Unit Thermal Resistance, Junction-ambient R JA 89 /W Thermal Resistance, Junction-case R JC 3.12 /W Maximum Lead Temperature for Soldering Purposes:1/8” from Case for 5 Seconds (1)Pulse Test: Pulse Width=5ms, Duty Cycle TL 275 10% 1/4 ISSUED DATE :2005/01/12 REVISED DATE : Electrical Characteristics(Tc = 25 Parameter Unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions VCEO(sus) 400 - - V Collector Cutoff Current ICEV - - 1 5 mA VCEV=Rated Value, V BE(off)=1.5V VCEV=Rated Value, V BE(off)=1.5V, TC=100 Emitter Cutoff Current IEBO - - 1 mA VEB=9V VCE(sat)1 - - 0.5 VCE(sat)2 - - 1.0 VCE(sat)3 - - 3.0 VCE(sat)4 - - 1.0 VBE(sat)1 - - 1.0 *Off Characteristics(1) Collector-Emitter Sustaining Voltage IC=10mA , IB=0 *On Characteristics(1) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain V IC=1A, IB=250mA IC=1.5A, IB=500mA IC=1A, IB=250mA, TC=100 IC=500mA, IB=100mA V VBE(sat)2 - - 1.2 VBE(sat)3 - - 1.1 IC=1A, IB=250mA, TC=100 HFE1 8 - 40 VCE=2V, IC=500mA HFE2 5 - 25 VCE=2V, IC=1A Current-Gain Bandwidth Product Output Capacitance IC=500mA, IB=100mA fT 4 10 - MHz Cob - 21 - pF Td - 0.05 0.1 IC=1A, IB=250mA VCE=10V, IC =100mA, f=1MHz VCB=10V, IE=0, f=0.1MHz *Switching Characteristics Delay Time Rise Time Tr - 0.5 1 Storage Time Ts - 2 4 Fall Time Tf - 0.4 0.7 Storage Time Tsv - 1.7 4 Crossover Time Tc - 0.29 0.75 Fall Time Tfi - 0.15 - (1)Pulse Test: Pulse Width=300 s, Duty Cycle s VCC=125V, IC =1A, IB1=IB2=0.2A, Tp=25 s, Duty Cycle 1% s IC=1A, Vclamp=300V, IB1=0.2A, VBE(off)=5Vdc, TC=100 % Classification Of HFE1 Rank Range A 8~16 B 15~21 C 20~26 D 25~31 E 30~36 F 35~40 2/4 ISSUED DATE :2005/01/12 REVISED DATE : Characteristics Curve 3/4 ISSUED DATE :2005/01/12 REVISED DATE : Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 4/4