E2L0016-17-Y1 ¡ Semiconductor MSM548262 ¡ Semiconductor This version: Jan. 1998 MSM548262 Previous version: Dec. 1996 262,144-Word ¥ 8-Bit Multiport DRAM DESCRIPTION The MSM548262 is a 2-Mbit CMOS multiport DRAM composed of a 262,144-word by 8-bit dynamic RAM, and a 512-word by 8-bit SAM. Its RAM and SAM operate independently and asynchronously. It supports three types of operations: random access to RAM port, high speed serial access to SAM port, and bidirectional transfer of data between any selected row in the RAM port and the SAM port. In addition to the conventional multiport DRAM operating modes, the MSM548262 features block write, flash write functions on the RAM port and a split data transfer capability on the SAM port. The SAM port requires no refresh operation because it uses static CMOS flipflops. FEATURES • RAS only refresh • Single power supply: 5 V ±10% • CAS before RAS refresh • Full TTL compatibility • Hidden refresh • Multiport organization • Serial read/write RAM : 256K word ¥ 8 bits • 512 tap location SAM : 512 word ¥ 8 bits • Bidirectional data transfer • Fast page mode • Split transfer • Write per bit • Masked write transfer • Masked flash write • Refresh: 512 cycles/8 ms • Masked block write • Package options: 40-pin 400 mil plastic SOJ (SOJ40-P-400-1.27) (Product : MSM548262-xxJS) 44/40-pin 400 mil plastic TSOP (Type II)(TSOPII44/40-P-400-0.80-K)(Product : MSM548262-xxTS-K) xx indicates speed rank. PRODUCT FAMILY Family Access Time Cycle Time Power Dissipation RAM SAM RAM SAM Operating Standby MSM548262-60 60 ns 17 ns 120 ns 22 ns 140 mA 8 mA MSM548262-70 70 ns 17 ns 140 ns 22 ns 130 mA 8 mA MSM548262-80 80 ns 20 ns 150 ns 25 ns 120 mA 8 mA 1/37 ¡ Semiconductor MSM548262 PIN CONFIGURATION (TOP VIEW) VCC 1 40 VSS SC 2 39 SDQ8 SDQ1 3 38 SDQ7 SDQ2 4 37 SDQ6 SDQ3 5 36 SDQ5 SDQ4 6 35 SE TRG 7 34 DQ8 DQ1 8 33 DQ7 DQ2 9 32 DQ6 DQ3 10 31 DQ5 DQ4 11 30 VSS VSS 12 29 DSF WE 13 28 NC RAS 14 27 CAS A8 15 26 QSF A7 16 25 A0 A6 17 24 A1 A5 18 23 A2 A4 19 22 A3 VCC 20 21 VSS VCC SC SDQ1 SDQ2 SDQ3 SDQ4 TRG DQ1 DQ2 DQ3 1 2 3 4 5 6 7 8 9 10 44 43 42 41 40 39 38 37 36 35 VSS SDQ8 SDQ7 SDQ6 SDQ5 SE DQ8 DQ7 DQ6 DQ5 DQ4 VSS WE RAS A8 A7 A6 A5 A4 VCC 13 14 15 16 17 18 19 20 21 22 32 31 30 29 28 27 26 25 24 23 VSS DSF NC CAS QSF A0 A1 A2 A3 VSS 44/40-Pin Plastic TSOP (II) (K Type) 40-Pin Plastic SOJ Pin Name A0 - A8 Function Address Input Pin Name Function SC Serial Clock DQ1 - DQ8 RAM Inputs/Outputs SE SAM Port Enable SDQ1 - SDQ8 SAM Inputs/Outputs DSF Special Function Input RAS Row Address Strobe QSF Special Function Output CAS Column Address Strobe VCC Power Supply (5 V) WE Write Enable VSS Ground (0 V) TRG Transfer/Output Enable NC No Connection Note: The same power supply voltage must be provided to every VCC pin, and the same GND voltage level must be provided to every VSS pin. 2/37 Block Write Control Column Mask Register Sense Amp. I/O Control Color Register RAM Input Buffer Mask Register A0 - A8 Refresh Counter Row Decoder Row Address Buffer 512 ¥ 512 ¥ 8 RAM ARRAY Gate Gate SAM SAM Serial Decoder SAM Address Buffer ¡ Semiconductor Column Decoder BLOCK DIAGRAM Column Address Buffer DQ 1 - 8 RAM Output Buffer Flash Write Control SAM Input Buffer RAS CAS SDQ 1 - 8 SAM Output Buffer Timing Generator TRG WE DSF SC SAM Address Counter SE VCC VSS 3/37 MSM548262 SAM Stop Control QSF ¡ Semiconductor MSM548262 ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings (Note: 1) Parameter Symbol Condition Rating Unit Input Output Voltage VT Ta = 25°C –1.0 to 7.0 V Output Current IOS Ta = 25°C 50 mA Power Dissipation PD Topr Ta = 25°C 1 W Operating Temperature — 0 to 70 °C Storage Temperature Tstg — –55 to 150 °C Recommended Operating Conditions (Ta = 0°C to 70°C) (Note: 2) Parameter Symbol Min. Typ. Max. Unit Power Supply Voltage VCC 4.5 5.0 5.5 V Input High Voltage VIH 2.4 — 6.5 V Input Low Voltage VIL –1.0 — 0.8 V Capacitance (VCC = 5 V ±10%, f = 1 MHz, Ta = 25°C) Parameter Input Capacitance Input/Output Capacitance Output Capacitance Note: Symbol Min. Max. Unit Ci — 8 pF Cio — 9 pF Co(QSF) — 9 pF This parameter is periodically sampled and is not 100% tested. DC Characteristics 1 Symbol Condition Min. Max. Output "H" Level Voltage Parameter VOH IOH = –1 mA 2.4 — Output "L" Level Voltage VOL IOL = 2.1 mA — 0.4 Input Leakage Current ILI 0 £ VIN £ VCC All other pins not under test = 0 V –10 10 0 £ VOUT £ 5.5 V Output Disable –10 Output Leakage Current ILO Unit V mA 10 4/37 ¡ Semiconductor MSM548262 DC Characteristics 2 (VCC = 5 V ±10%, Ta = 0°C to 70°C) Item (RAM) Operating Current (RAS, CAS Cycling, tRC = tRC min.) Standby Current (RAS, CAS = VIH) RAS Only Refresh Current (RAS Cycling, CAS = VIH, tRC = tRC min.) Page Mode Current (RAS = VIL, CAS Cycling, tPC = tPC min.) CAS before RAS Refresh Current (RAS Cycling, CAS before RAS, tRC = tRC min.) Data Transfer Current (RAS, CAS Cycling, tRC = tRC min.) Flash Write Current (RAS, CAS Cycling, tRC = tRC min.) Block Write Current (RAS, CAS Cycling, tRC = tRC min.) -60 -70 -80 SAM Symbol Standby ICC1 95 85 75 3, 4 17 Max. Max. Max. Active ICC1A 140 130 120 Standby ICC2 8 8 8 Unit Note Active ICC2A 60 55 50 3, 4 Standby ICC3 95 85 75 3, 4 Active ICC3A 140 130 120 17 Standby ICC4 75 70 65 3, 4 Active ICC4A 140 130 120 Standby ICC5 95 85 75 Active ICC5A 140 130 120 3, 4 mA 18 3, 4 Standby ICC6 95 85 75 3, 4 Active ICC6A 140 130 120 17 Standby ICC7 95 85 75 3, 4 Active ICC7A 140 130 120 3, 4 Standby ICC8 95 85 75 3, 4 Active ICC8A 140 130 120 3, 4 5/37 ¡ Semiconductor MSM548262 AC Characteristics (1/3) Parameter Symbol -60 -70 -80 Min. Max. Min. Max. Min. Max. Unit Note tRC 120 — 140 — 150 — ns tRWC 170 — 185 — 195 — ns tPC 40 — 45 — 50 — ns tPRWC 85 — 90 — 90 — ns tRAC — 60 — 70 — 80 ns 8, 14 Access Time from Column Address tAA — 30 — 35 — 40 ns 8, 14 Access Time from CAS tCAC — 15 — 20 — 25 ns 8, 15 Access Time from CAS Precharge tCPA — 35 — 40 — 45 ns 8, 15 Output Buffer Turn-off Delay tOFF 0 15 0 20 0 20 ns 10 7 Random Read or Write Cycle Time Read Modify Write Cycle Fast Page Mode Cycle Time Fast Page Mode Read Modify Write Cycle Time Access Time from RAS Transition Time (Rise and Fall) tT 3 35 3 35 3 35 ns RAS Precharge Time tRP 50 — 60 — 60 — ns RAS Pulse Width tRAS 60 10k 70 10k 80 10k ns RAS Pulse Width (Fast Page Mode Only) tRASP 60 100k 70 100k 80 100k ns RAS Hold Time tRSH 15 — 20 — 25 — ns CAS Hold Time tCSH 60 — 70 — 80 — ns CAS Pulse Width tCAS 15 10k 20 10k 25 10k ns RAS to CAS Delay Time tRCD 20 45 20 50 20 55 ns 14 RAS to Column Address Delay Time tRAD 15 30 15 35 15 40 ns 14 Column Address to RAS Lead Time tRAL 30 — 35 — 40 — ns CAS to RAS Precharge Time tCRP 10 — 10 — 10 — ns CAS Precharge Time (Fast Page Mode) tCP 10 — 10 — 10 — ns Row Address Set-up Time tASR 0 — 0 — 0 — ns Row Address Hold Time tRAH 10 — 10 — 10 — ns Column Address Set-up Time tASC 0 — 0 — 0 — ns Column Address Hold Time tCAH 10 — 10 — 12 — ns Column Address Hold Time referenced to RAS tAR 50 — 55 — 55 — ns Read Command Set-up Time tRCS 0 — 0 — 0 — ns Read Command Hold Time tRCH 0 — 0 — 0 — ns 11 Read Command Hold Time referenced to RAS tRRH 0 — 0 — 0 — ns 11 13 Write Command Set-up Time tWCS 0 — 0 — 0 — ns Write Command Hold Time tWCH 10 — 12 — 15 — ns Write Command Hold Time referenced to RAS tWCR 50 — 55 — 55 — ns Write Command Pulse Width tWP 10 — 12 — 15 — ns Write Command to RAS Lead Time tRWL 15 — 20 — 20 — ns Write Command to CAS Lead Time tCWL 15 — 20 — 20 — ns Data Set-up Time tDS 0 — 0 — 0 — ns 12 Data Hold Time tDH 10 — 12 — 15 — ns 12 Data Hold Time referenced to RAS tDHR 50 — 55 — 55 — ns 6/37 ¡ Semiconductor MSM548262 AC Characteristics (2/3) Parameter Symbol -60 -70 -80 Min. Max. Min. Max. Min. Max. RAS to WE Delay Time tRWD 80 — 90 Column Address to WE Delay Time tAWD 50 — CAS to WE Delay Time tCWD 35 — Data to CAS Delay Time tDZC 0 Data to TRG Delay Time tDZO 0 Access Time from TRG tOEA — Output Buffer Turn-off Delay from TRG tOEZ 0 TRG Command Hold Time tOEH 10 — RAS Hold Time referenced to TRG tROH 10 — Unit Note — 100 — ns 13 55 — 65 — ns 13 40 — 45 — ns 13 — 0 — 0 — ns — 0 — 0 — ns 15 — 20 — 20 ns 10 0 10 0 10 ns 10 — 10 — ns 15 — 15 — ns CAS Set-up Time for CAS before RAS Cycle tCSR 10 — 10 — 10 — ns CAS Hold Time for CAS before RAS Cycle tCHR 10 — 10 — 10 — ns RAS Precharge to CAS Active Time tRPC 0 — 0 — 0 — ns Refresh Period tREF — 8 — 8 — 8 ms WE Set-up Time tWSR 0 — 0 — 0 — ns WE Hold Time tRWH 10 — 10 — 12 — ns DSF Set-up Time referenced to RAS tFSR 0 — 0 — 0 — ns DSF Hold Time referenced to RAS (1) tRFH 10 — 10 — 12 — ns DSF Hold Time referenced to RAS (2) tFHR 50 — 55 — 55 — ns DSF Set-up Time referenced to CAS tFSC 0 — 0 — 0 — ns DSF Hold Time referenced to CAS tCFH 10 — 10 — 12 — ns Write Per Bit Mask Data Set-up Time tMS 0 — 0 — 0 — ns Write Per Bit Mask Data Hold Time tMH 10 — 10 — 12 — ns TRG High Set-up Time tTHS 0 — 0 — 0 — ns TRG High Hold Time tTHH 10 — 10 — 12 — ns TRG Low Set-up Time tTLS 0 — 0 — 0 — ns TRG Low Hold Time tTLH 10 10k 10 10k 12 10k ns TRG Low Hold Time referenced to RAS tRTH 50 10k 60 10k 65 10k ns TRG Low Hold Time referenced to Column Address tATH 20 — 25 — 30 — ns TRG Low Hold Time referenced to CAS tCTH 15 — 20 — 25 — ns TRG to RAS Precharge Time tTRP 50 — 60 — 60 — ns TRG Precharge Time tTP 20 — 20 — 20 — ns RAS to First SC Delay Time (Read Transfer) tRSD 60 — 70 — 80 — ns Column Address to First SC Delay Time tASD 40 — 45 — 45 — ns CAS to First SC Delay Time (Read Transfer) tCSD 20 — 20 — 25 — ns Last SC to TRG Lead Time tTSL 5 — 5 — 5 — ns TRG to First SC Delay Time (Read Transfer) tTSD 15 — 15 — 15 — ns Last SC to RAS Set-up Time (Serial Input) tSRS 20 — 25 — 25 — ns Serial Output Buffer Turn-off Delay from RAS tSDZ 10 30 10 40 10 40 ns 10 7/37 ¡ Semiconductor MSM548262 AC Characteristics (3/3) Parameter SC Cycle Time Symbol -60 -70 -80 Min. Max. Min. Max. Min. Max. Unit Note tSCC 22 — 22 — 25 — ns SC Pulse Width (SC High Time) tSC 5 — 5 — SC Precharge Time (SC Low Time) tSCP 5 — 5 — 7 — ns 7 — ns Access Time from SC tSCA — 17 — 17 — 20 ns 9 Serial Output Hold Time from SC tSOH 5 — 5 — 5 — ns 19 Access Time from SE tSEA — 17 — 17 — 20 ns 9 SE Pulse Width tSE 10 — 10 — 10 — ns SE Precharge Time tSEP 10 — 10 — 10 — ns Serial Output Buffer Turn-off Delay from SE tSEZ 0 20 0 20 0 20 ns Split Transfer Set-up Time tSTS 25 — 25 — 30 — ns Split Transfer Hold Time tSTH 25 — 25 — 30 — ns SC-QSF Delay Time tSQD — 25 — 25 — 25 ns TRG-QSF Delay Time tTQD — 25 — 25 — 25 ns CAS-QSF Delay Time tCQD — 30 — 35 — 35 ns RAS-QSF Delay Time tRQD — 70 — 75 — 75 ns RAS to Serial Input Delay Time tSDD 30 — 40 — 40 — ns Serial Input Set-up Time tSDS 0 — 0 — 0 — ns Serial Input Hold Time tSDH 10 — 10 — 12 — ns Serial Input to SE Delay Time tSZE 0 — 0 — 0 — ns Serial Input to First SC Delay Time tSZS 0 — 0 — 0 — ns Serial Write Enable Set-up Time tSWS 0 — 0 — 0 — ns Serial Write Enable Hold Time tSWH 10 — 10 — 12 — ns Serial Write Disable Set-up Time tSWIS 0 — 0 — 0 — ns Serial Write Disable Hold Time tSWIH 10 — 10 — 12 — ns 10 8/37 ¡ Semiconductor Notes: MSM548262 1. Exposure beyond the "Absolute Maximum Ratings" may cause permanent damage to the device. 2. All voltages are referenced to VSS. 3. These parameters depend on the cycle rate. 4. These parameters depend on output loading. Specified values are obtained with the output open. 5. An initial pause of 200 ms is required after power up followed by any 8 RAS cycles (TRG = "high") and any 8 SC cycles before proper device operation is achieved. In the case of using an internal refresh counter, a minimum of 8 CAS before RAS cycles instead of 8 RAS cycles are required. 6. AC measurements assume tT = 5 ns. 7. VIH (Min.) and VIL (Max.) are reference levels for measuring timing of input signals. Also, transition times are measured between VIH and VIL. 8. RAM port outputs are measured with a load equivalent to 1 TTL load and 50 pF. DOUT reference levels : VOH/VOL = 2.0 V/0.8 V. 9. SAM port outputs are measured with a load equivalent to 1 TTL load and 30 pF. DOUT reference levels : VOH/VOL = 2.0 V/0.8 V. 10. tOFF (Max.), tOEZ (Max.), tSDZ (Max.) and tSEZ (Max.) define the time at which the outputs achieve the open circuit condition, and are not referenced to output voltage levels. This parameter is sampled and not 100% tested. 11. Either tRCH or tRRH must be satisfied for a read cycle. 12. These parameters are referenced to CAS leading edge of early write cycles, and to WE leading edge in TRG controlled write cycles and read modify write cycles. 13. tWCS, tRWD, tCWD and tAWD are not restrictive operating parameters. They are included in the data sheet as electrical characteristics only. If tWCS ≥ tWCS (Min.), the cycle is an early write cycle, and the data out pin will remain open circuit throughout the entire cycle; If tRWD ≥ tRWD (Min.), tCWD ≥ tCWD (Min.) and tAWD ≥ tAWD (Min.), the cycle is a read modify write cycle, and the data out will contain data read from the selected cell; If neither of the above sets of conditions are satisfied, the condition of the data out is indeterminate. 14. Operation within the tRCD (Max.) limit ensures that tRAC (Max.) can be met. tRCD (Max.) is specified as a reference point only: If tRCD is greater than the specified tRCD (Max.) limit, then access time is controlled by tCAC. 15. Operation within the tRAD (Max.) limit ensures that tRAC (Max.) can be met. tRAD (Max.) is specified as a reference point only: If tRAD is greater than the specified tRAD (Max.) limit, then access time is controlled by tAA. 16. Input levels at the AC testing are 3.0 V/0 V. 17. Address (A0 - A8) may be changed two times or less while RAS = VIL. 18. Address (A0 - A8) may be changed once or less while CAS = VIH and RAS = VIL. 19. This is guaranteed by design. (tSOH/tCOH = tSCA/tCAC - output transition time) This parameter is not 100% tested. 9/37 ¡ Semiconductor MSM548262 TIMING WAVEFORM Read Cycle tRC tRAS RAS tRP , ,, ,, tCSH tCRP CAS tAR tRAD tASR Address tRSH tCAS tRCD tRAL tRAH tASC Row tCAH Column tFHR tFSR DSF tRFH tFSC tCFH tRCH tRCS WE tRRH tCAC tOFF tRAC tAA DQ1 - 8 Open Valid Data tROH tTHS TRG tTHH tOEA tOEZ "H" or "L" 10/37 ¡ Semiconductor MSM548262 Fast Page Mode Read Cycle tRASP RAS ,, ,, , tCSH tCRP CAS tPC tRCD tCAS tCP tRSH tCAS tCP tCAS tAR tRAD tASR Address tRP tRAL tRAH tASC Row tCAH tASC tCAH tASC Column Column tCAH Column tFHR tFSR DSF tRFH tFSC tCFH tRCS WE tFSC tCFH tFSC tCFH tRCS tRCS tRCH tCAC tCAC Valid Data Open tRAC TRG tTHH tCAC tAA tOFF tTHS tRRH tRCH tAA DQ1 - 8 tAA tOFF tOEZ tOFF Valid Data tCPA tOEA tRCH Valid Data tCPA tOEA tOEZ tOEA tOEZ "H" or "L" 11/37 ¡ Semiconductor MSM548262 Write Cycle Function Table RAS Falling Edge Code A C DSF WE CAS Falling Edge D B E Function DQ DSF DQ RWM 0 0 Write Mask 0 Valid Data BWM 0 0 Write Mask 1 Column Mask Masked Block Write FWM 1 0 Write Mask X X Masked Flash Write RW 0 1 X 0 Valid Data BW 0 1 X 1 Column Mask LCR 1 1 X 1 Color Data Masked Write Normal Write Block Write Load Color Register WRITE MASK DATA: "Low" = Mask, "High" = No Mask Column Mask Data DQ1 - 4 Column Mask Data DQ1 Column 0 (A0 = 0, A1 = 0) DQ2 Column 1 (A0 = 1, A1 = 0) Low: Mask DQ3 Column 2 (A0 = 0, A1 = 1) High: No Mask DQ4 Column 3 (A0 = 1, A1 = 1) 12/37 ¡ Semiconductor MSM548262 Early Write Cycle tRC tRAS RAS tRP , ,, , ,,, tCSH tCRP CAS tAR tRAD tRAL tRAH tASR Address tRSH tCAS tRCD tASC Row tCAH Column tFHR tRFH tFSR DSF tFSC A tCFH B tCWL WE tRWL tRWH tWSR tWP C tWCR tWCS tMH tMS DQ1 - 8 D tTHS TRG tWCH tDHR tDS tDH E tTHH "H" or "L" 13/37 ¡ Semiconductor MSM548262 Late Write Cycle tRC tRAS RAS tRP , ,, , ,, tCSH tCRP CAS tAR tRAD tRAH tASR Address tRSH tCAS tRCD tRAL tASC Row tCAH Column tFHR tRFH tFSR DSF tFSC A tCFH B tCWL tRWH tWSR WE tRWL tRCS tWP C tWCR tDHR tMH tMS DQ1 - 8 D tTHS TRG tDS tDH E tOEH "H" or "L" 14/37 ¡ Semiconductor MSM548262 Read Modify Write Cycle tRWC tRAS RAS tRP , ,, , ,, tCSH tCRP CAS tAR tRAD tRAL tRAH tASR Address tRSH tCAS tRCD tASC Row Column tAWD tFHR tRFH tFSR DSF tCAH tFSC A tCFH B tCWL tRWH tWSR WE tRCS tCWD tRWL tWP tCAC C tRWD tRAC tMH tMS DQ1 - 8 tDZC tDS Valid Data D tDH E tDZO tTHS TRG tTHH tOEA tOEZ tOEH "H" or "L" 15/37 ¡ Semiconductor MSM548262 Fast Page Mode Early Write Cycle tRASP tRP RAS tCSH tCRP tCAS tRCD CAS tPC tCP tCAS tRSH tCP tCAS tAR tRAL tRAD , , , tASR tRAH Address tASC Row tCAH tASC Column tCAH tASC Column tCAH Column tFHR tFSR DSF tRFH tFSC tCFH A tFSC B tCFH B tCWL tWSR tRWH WE tWCS C tMS DQ1 - 8 tMH D tTHS tDS E tFSC tCFH B tCWL tCWL tWCH tWP tWCS tWCH tWP tWCS tWCH tWP tDH tDS tDH tDS tDH E E tTHH TRG "H" or "L" 16/37 ¡ Semiconductor MSM548262 Fast Page Mode Read Modify Write Cycle tRASP tRP RAS tCSH tCRP tPRWC tCAS tRCD CAS tCP tRSH tCAS tCP tCAS tAR tRAL tRAD , , , tASR Address tRAH tASC tASC tCAH Row Column tASC tCAH Column tCAH Column tFHR tFSR DSF tRFH A B tWSR WE B tRCS tMH B tCWL tAWD tCWD tWP tCAC tCAC tCAC tDH Out tTHH tOEA tDH tAA In Out tDS In Out tOEZ tOEA tDH tAA tDS tOEZ tTHS tCWL tAWD tCWD tWP tDS D tCFH tCWD tWP tAA tMS tFSC tCFH tCWL tAWD tRWH C DQ1 - 8 tFSC tFSC tCFH In tOEZ tOEA TRG "H" or "L" 17/37 ¡ Semiconductor MSM548262 RAS Only Refresh Cycle tRC tRAS RAS tRP , ,,, , ,,, tCRP CAS tASR Address WE DQ1 - 8 tRFH Open tTHS TRG tRAH Row tFSR DSF tRPC tTHH "H" or "L" 18/37 ¡ Semiconductor MSM548262 CAS before RAS Refresh Cycle tRC tRP RAS Address DSF WE tRP ,,,, ,,,, tRPC CAS tRAS tCSR tCHR tRPC Inhibit Falling Transition tOFF DQ1 - 8 TRG Open "H" or "L" 19/37 ¡ Semiconductor MSM548262 Hidden Refresh Cycle tRC tRAS RAS tRCD tRSH tAR tRAD tASR Address tRAS ,, ,, ,, tCRP CAS tRP tRAH tCHR tRAL tASC Row tCAH Column tFHR tFSR DSF tRFH tFSC tRCS WE tCFH tRRH tCAC tAA DQ1 - 8 tOFF Open Valid Data tRAC tTHS TRG tTHH tOEA tOEZ "H" or "L" 20/37 ¡ Semiconductor MSM548262 Read Transfer 1 tRC tRAS RAS tRP , ,,, tCSH tRSH tCAS tRCD CAS tAR tRAD Address Row tFSR DSF tRAL tASC tRAH tASR tCAH SAM Start tRFH tWSR tRWH WE tASD tCSD DQ1 - 8 tRSD Open tTRP tTLS TRG tTLH tTP tSC tTSD tSCP tSRS SC Note 2 tSIS SDQ1 - 8 tSCA tSZS tSIH tSCA tSOH Data Out Din tRQD QSF tSCC tSC tCQD Note 3 tTQD Note 3 "H" or "L" Note 1: SE = "L" Note 2: There must be no rising transitions Note 3: QSF = "L"-- Lower SAM (0 - 255) is active QSF = "H"-- Upper SAM (256 - 511) is active 21/37 ¡ Semiconductor MSM548262 Read Transfer 2 (Real Time Read Transfer) tRC tRAS RAS tRP , ,,, tCSH tRSH tCAS tRCD CAS tAR tRAD Address Row tFSR DSF tASC tRAH tASR tRAL tCAH SAM Start tRFH tWSR tRWH WE tCTH tATH DQ1 - 8 Open tTRP tTLS TRG tTP tRTH tSCC tSCP SC tTSL tSC tTSD tSCA tSOH SDQ1 - 8 tSCA tSOH Data Out Data Out Data Out Data Out tTQD QSF Note 2 Note 2 "H" or "L" Note 1: SE = "L" Note 2: QSF = "L"-- Lower SAM (0 - 255) is active QSF = "H"-- Upper SAM (256 - 511) is active 22/37 ¡ Semiconductor MSM548262 Split Read Transfer tRC tRAS RAS tRP , ,,, tCSH tRSH tCAS tRCD CAS tAR tRAD tASR Address tRAL tASC Row tFSR DSF tRAH tCAH SAM Start Sj tRFH tWSR tRWH WE tCTH tATH DQ1 - 8 tTLS TRG tTLH tSCC tSCP tSC tSTS SC SDQ1 - 8 Open tRTH 511 (255) tSCA tSOH Data Out 254 (510) 255 (511) Data Out Data Out Si (Si+256) tSCA tSOH Data Out Data Out tSQD QSF Note 2 Sj+256 (S j) Data Out tSQD Note 2 Note 2 "H" or "L" Note 1: SE = "L" Note 2: QSF = "L"-- Lower SAM (0 - 255) is active QSF = "H"-- Upper SAM (256 - 511) is active Note 3: Si is the SAM start address in before SRT 23/37 ¡ Semiconductor MSM548262 Masked Write Transfer tRC tRAS RAS tRP , ,,, tCSH tRSH tCAS tRCD CAS tAR tRAD tASR Address tASC tRAH Row tFSR DSF tRAL tCAH SAM Start tRFH tWSR tRWH WE tMS DQ1 - 8 tCSD tMH Open Mask Data tRSD tTLS TRG tTLH tSRS tSCC tSC SC tSCP tSC Note 2 tSDZ tSDS tSOH SDQ1 - 8 Dout Dout tSDH tSDS Data In tSDD tSDH Data In tCQD tRQD QSF Note 3 Note 3 "H" or "L" Note 1: SE = "L" Note 2: There must be no rising transitions Note 3: QSF = "L"-- Lower SAM (0 - 255) is active QSF = "H"-- Upper SAM (256 - 511) is active 24/37 ¡ Semiconductor MSM548262 Masked Split Write Transfer tRC tRAS RAS tRP , ,,, tCSH tRSH tCAS tRCD CAS tAR tRAD tASR Address tASC tRAH Row tFSR DSF tRAL tCAH SAM Start Sj tRFH tWSR tRWH WE tMS DQ1 - 8 Mask Data tTLS TRG tCTH tATH tMH Open tRTH tTLH tSCC tSTS tSCP SC 511 (255) Si (Si+256) tSDS SDQ1 - 8 Data In tSC tSDH Data In 254 (510) tSDS Sj+256 (S j) tSDH Data In Data In tSQD QSF 255 (511) Note 2 Data In Data In tSQD Note 2 Note 2 "H" or "L" Note 1: SE = "L" Note 2: QSF = "L"-- Lower SAM (0 - 255) is active QSF = "H"-- Upper SAM (256 - 511) is active Note 3: Si is the SAM start address in before SWT 25/37 ¡ Semiconductor MSM548262 Serial Read Cycle tSEP SE tSCC tSC SC tSCA tSCP tSOH SDQ1 - 8 tSEA tSEZ Data Out Data tSCA tSCA tSOH tSOH Data Data Out Data Out Serial Write Cycle tSEP SE tSCC tSC SC tSWH Data In tSWIH tSWS tSCP tSDS SDQ1 - 8 tSWIS tSDH Data In tSZE tSDS tSDH Data In Data In "H" or "L" 26/37 ¡ Semiconductor MSM548262 PIN FUNCTIONS Address Input: A0 - A8 The 18 address bits decode 8 bits of the 2,097,152 locations in the MSM548262 memory array. The address bits are multiplexed to 9 address input pins (A0 - A8) as standard DRAM. 9 row address bits are latched at the falling edge of RAS. The following 9 column address bits are latched at the falling edge of CAS. Row Address Strobe: RAS RAS is a basic RAM control signal. The RAM port is in standby mode when the RAS level is "high". As the standard DRAM’s RAS signal function, RAS is the control input that latches the row address bits, and a random access cycle begins at the falling edge of RAS. In addition to the conventional RAS signal function, the level of the input signals CAS, TRG, WE and DSF at the falling edge of RAS, determines the MSM548262 operation mode. Column Address Strobe: CAS As the standard DRAM’s CAS signal function, CAS is the control input signal that latches the column address input and the state of the special function input DSF to select in conjunction with the RAS control, either read/write operations or the special block write feature on the RAM port when the DSF is held "low" at the falling edge of RAS. CAS also acts as a RAM port output enable signal. Data Transfer/Output Enable: TRG TRG is also a control input signal having multiple functions. As the standard DRAM’s OE signal function, TRG is used as an output enable control when TRG is "high" at the falling edge of RAS. In addition to the conventional OE signal function, a data transfer operation is started between the RAM port and the SAM port when TRG is "low" at the falling edge of RAS. Write Per Bit/Write Enable: WE WE is a control input signal having multiple functions. As the standard DRAM’s WE signal function, this is used to write data into the memory on the RAM port when WE is "high" at the falling edge of RAS. In addition to the conventional WE signal function, the WE determines the write-per-bit function, when WE is "low" at the falling edge of RAS during RAM port operations. The WE also determines the direction of data transfer between the RAM and SAM. When the WE is "high" at the falling edge of RAS, the data is transferred from RAM to SAM (read transfer). When the WE is "low" at the falling edge of RAS, the data is transferred SAM to RAM (write transfer). 27/37 ¡ Semiconductor MSM548262 Write Mask Data/Data Input and Output: DQ1 - DQ8 In conventional write-per bit mode, the DQ pins function as mask data at the falling edge of RAS. Data is written only to high DQ pins. Data on low DQ pins is masked and internal data is retained. After that, they function as input/output pins similar to a standard DRAM. Serial Clock: SC SC is a main serial cycle control input signal. All operations of the SAM port are synchronized with the serial clock SC. Data is shifted in or out of the SAM registers at the rising edge of SC. In a serial read cycle, the output data becomes valid on the SDQ pins after the maximum specified serial access time tSCA from the rising edge of SC. In a serial write cycle, data on SDQ pins at the rising edge of SC are fetched into the SAM register. Serial Enable: SE The SE is a serial access enable control and serial read/write control signal. In a serial read cycle, SE is used as an output control. In a serial write cycle, SE is used as a write enable control. When SE is "high", serial access is disabled. However, the serial address pointer location is still incremented when SC is clocked even when SE is "high". Special Function Input: DSF The DSF is latched at the falling edge of RAS and CAS. It allows for the selection of several RAM ports and transfer operating modes. In addition to the conventional multiport DRAM, the special functions consisting of flash write, block write, load/read color register, and split read/write transfer can be invoked. Special Function Output: QSF QSF is an output signal, which during split register mode indicates which half of the split SAM is being accessed. QSF "low" indicates that the lower split SAM (0 - 255) is being accessed. QSF "high" indicates that the upper SAM (256 - 511) is being accessed. Serial Input/Output: SDQ1 - SDQ8 Serial input/output mode is determined by the most recent read or write transfer cycle. When a read transfer cycle is performed, the SAM port is in the output mode. When a write transfer cycle is performed, the SAM port is switched from output mode to input mode. 28/37 ¡ Semiconductor MSM548262 OPERATION MODES Table-1 shows the function truth table for a listing of all available RAM ports, and transfer operation of MSM548262. The RAM port and data transfer operations are determined by the state of CAS, TRG, WE and DSF at the falling edge of RAS, and by the level of DSF at the falling edge of CAS. Table-1. Function Truth Table RASØ Code CASØ Address W/IO CAS TRG WE DSF DSF RASØ CASØ RASØ CAS Write Mask Color Register Function /WEØ * * * — — CBR Refresh — * — — — RAS Only Refresh Row TAP WM1 * Yes — Masked Write Transfer * Row TAP WM1 * Yes — 0 * Row TAP * * — — Read Transfer 1 1 * Row TAP * * — — Split Read Transfer 1 0 0 0 Row Column WM1 Din,Dout Yes — 1 1 0 0 1 Row Yes Use Masked Block Write FWM 1 1 0 1 * Row Yes Use Masked Flash Write RW 1 1 1 0 0 Row Column No — BW 1 1 1 0 1 Row No Use — Load CBR 0 * * * — ROR 1 1 * 0 — Row MWT 1 0 0 0 * MSWT 1 0 0 1 RT 1 0 1 SRT 1 0 RWM 1 BWM LCR 1 1 1 1 1 * Row Column A2c - 8c * Column A2c - 8c * WM1 Column Select WM1 — * * * Din,Dout Column Select Color Data Masked Split Write Transfer Read/Write (Mask) Read/Write (No Mask) Block Write (No Mask) Load Color Register If the DSF is "high" at the falling edge of RAS, special functions such as split transfer, flash write, load color register can be invoked. If the DSF is "low" at the falling edge of RAS and "high" at the falling edge of CAS, the block write feature can be invoked. 29/37 ¡ Semiconductor MSM548262 RAM PORT OPERATION RAM Read Cycle: RAS falling edge --- TRG = CAS = "H", DSF = "L" CAS falling edge --- DSF = "L" Row address is entered at the falling edge of RAS and column address at the falling edge of CAS to the device as in conventional DRAM. When the WE is "high" and TRG is "low" while CAS is "low", the data outputs through DQ pins. RAM Write Cycle: RAS falling edge --- TRG = CAS = "H", DSF = "L" CAS falling edge --- DSF = "L" 1) Write cycle with no mask: RAS falling edge -- WE = "H" If WE is set "low" at the falling edge of CAS after RAS goes "low" a write cycle is excuted. If WE is set "low" before the CAS falling edge, this cycle becomes an early write cycle, and all DQ pins attain high impedance. All 8 data are latched on the falling edge of CAS. If WE is set "low" after the CAS falling edge, this cycle becomes a late write cycle, and all 8 data are latched on the falling edge of WE. 2) Write cycle with mask: RAS falling edge -- WE = "L" If WE is set "low" at the falling edge of RAS, the mask write mode can be invoked. Mask data is loaded and used. The mask data on DQ1 - DQ8 is latched into the write mask register at the falling edge of RAS. When the mask data is low, writing is inhibited into the RAM and the mask data is high, data is written into the RAM. This mask data is in effect during the RAS cycle. In page mode cycle the mask data is retained during page access. 30/37 ¡ Semiconductor Load/Read Color Register: MSM548262 RAS falling edge --- CAS = TRG = WE = DSF = "H" CAS falling edge --- DSF = "H" The MSM548262 is provided with an on-chip 8-bit color register for use during the flash write or block write operation. Each bit of the color register corresponds to one of the DRAM I/O blocks. The data presented on the DQi lines is subsequently latched into the color register at the falling edge of either CAS or WE whichever occurs later. The read color register cycle is activated by holding WE "high" at the falling edge of CAS, and throughout the remainder of the cycle. The data in the color register becomes valid on the DQi lines after the specified access times from RAS and TRG are satisfied. During the load/read color register cycle, the memory cells on the row address latched at the falling edge of RAS are refreshed. Flash Write: RAS falling edge --- CAS = TRG = DSF = "H", WE = "L" Flash write allows for the data in the color register to be written into all the memory locations of a selected row. Each bit of the color register corresponds to one of the DRAM I/O blocks. The flash write operation can be selectively controlled on an I/O basis in the same manner as the write per bit operation. The mask data is the same as that of a RAM write cycle. 31/37 ¡ Semiconductor MSM548262 Block Write: RAS falling edge --- CAS = TRG = "H", DSF = "L" CAS falling edge --- DSF = "H" Block write allows for the data in the color register to be written into 4 consecutive column address locations, starting from a selected column address in a selected row. The block write operation can be selectively controlled on an I/O basis, and a column mask capability is also available. During a block write cycle, the 2 least significant column address locations (A0C and A1C) are internally controlled, and only the 7 most significant column addresses (A2C - A8C) are latched at the falling edge of CAS. 1) No mask block write: WE "high" at the falling edge of RAS The data on 8 DQ pins is all cleared by the data of the color register. 2) Masked block write: WE "low" at the falling edge of RAS The mask data is the same as that of a RAM write cycle. SAM PORT OPERATION Single Register Mode High speed serial read or write operation can be performed through the SAM port independent of the RAM port operation, except during read/write transfer cycles. The preceding transfer operation determines the direction of data flow through the SAM port. If the preceding transfer is a read transfer, the SAM port is in the output mode. If the preceding transfer is write transfer, the SAM port is in the input mode. Serial data can be read out of the SAM after a read transfer has been performed. The data is shifted out of the SAM starting at any of the 512 bits locations. The TAP location corresponds to the column address selected at the falling edge of CAS during the read or write transfer cycle. The SAM registers are configured as a circular data register. The data is shifted out sequentially. It starts from the selected TAP location at the most significant bit (511), then wraps around to the least significant bit (0). Split Register Mode In split register mode data can be shifted into or out of one half of the SAM, while a split read or split write transfer is being performed on the other half of the SAM. Conventional (non split) read, or write transfer cycle must precede any split read or split write transfers. The split read and write transfers will not change the SAM port mode set by the preceding conventional transfer operation. In the split register mode, serial data can be shifted in or out of one of the split SAM registers, starting from any at the 256 TAP locations, excluding the last address of each split SAM the data is shifted in or out sequentially starting from the selected TAP location at the most significant bit (255 or 511) of the first split SAM, and then the SAM pointer moves to the TAP location selected for the second split SAM to shift data in or out sequentially, starts from this TAP location at the most significant bit (511 or 255), and finally wraps around to the least significant bit. TAP 0 1 2 TAP 255 256 257 511 32/37 ¡ Semiconductor MSM548262 DATA TRANSFER OPERATIONS Upper SAM 256 ¥ 8 Array Serial Decoder Upper SAM 256 ¥ 8 256 ¥ 256 ¥ 8 Memory 256 ¥ 256 ¥ 8 Memory Array Lower SAM 256 ¥ 8 256 ¥ 256 ¥ 8 Memory Array Lower SAM 256 ¥ 8 The MSM548262 features two types of bidirectional data transfer capability between RAM and SAM. 1) Conventional (non split) transfer: 512 words by 8 bits of data can be loaded from RAM to SAM (Read transfer), or from SAM to RAM (Write transfer). 2) Split transfer: 256 words by 8 bits of data can be loaded from the lower/upper half of the RAM to the lower/upper half of the SAM (Split read transfer), or from the lower/upper half of SAM to the lower/upper half of RAM (Split write transfer). The conventional transfer and split transfer modes are controlled by the DSF input signal. Data transfer are invoked by holding the TRG signal "low" at the falling edge of RAS. The MSM548262 supports 4 types of transfer operations: Read transfer, Split read transfer, Write transfer and Split write transfer as shown in the truth table. The type of transfer operation is determined by the state of CAS, WE and DSF latched at the falling edge of RAS. During conventional transfer operations, the SAM port is switched from input to output mode (Read transfer), or output to input mode (Write transfer). It remains unchanged during split transfer operation (Split read transfer or Split write transfer). Both RAM and SAM are divided by the most significant row address (AX8), as shown in Figure 1. Therefore, no data transfer between AX8 = 0 side RAM and AX8 = 1 side RAM can be provided through the SAM. Care must be taken if the split read transfer on AX8 = 1 side (or AX8 = 0 side) is provided after the read transfer or the split read transfer, is provided on AX8 = 0 side (or AX8 = 1 side). 256 ¥ 256 ¥ 8 Memory AX8 = 0 Array AX8 = 1 SAM I/O Buffer SDQ1 - 8 Figure 1. RAM and SAM Configuration 33/37 ¡ Semiconductor MSM548262 Read Transfer: RAS falling edge --- CAS = WE = "H", TRG = DSF = "L" Read transfer consists of loading a selected row of data from the RAM into the SAM register. A read transfer is invoked by holding CAS "high", TRG "low", WE "high", and DSF "low" at the falling edge of RAS. The row address selected at the falling edge of RAS determines the RAM row to be transferred into the SAM. The transfer cycle is completed at the rising edge of TRG. When the transfer is completed, the SAM port is set into the output mode. In a read/real time read transfer cycle, the transfer of a new row of data is completed at the rising edge of TRG, and this data becomes valid on the SDQ lines after the specified access time tSCA from the rising edge of the subsequent SC cycles. The start address of the serial pointer of the SAM is determined by the column address selected at the falling edge of CAS. In a read transfer cycle (which is preceded by a write transfer cycle), SC clock must be held at a constant VIL or VIH after the SC high time has been satisfied. A rising edge of the SC clock must not occur until after the specified delay tTSD from the rising edge of TRG. In a real time read transfer cycle (which is preceded by another read transfer cycle), the previous row data appears on the SQD lines until the TRG signal goes "high", and the serial access time tSCA for the following serial clock is satisfied. This feature allows for the first bit of the new row of data to appear on the serial output as soon as the last bit of the previous row has been strobed without any timing loss. To make this continuous data flow possible, the rising edge of TRG must be synchronized with RAS, CAS, and the subsequent rising edge of SC (tRTH, tCTH, and tTSL/tTSD must be satisfied). Masked Write Transfer: RAS falling edge --- CAS = "H", TRG = WE = DSF = "L" Write transfer cycle consists of loading the content of the SAM register into a selected row of the RAM. This write transfer is the same as a mask write operation in RAM. If the SAM data to be transferred must first be loaded through the SAM, a Masked write transfer operation (all DQ pins "low" at falling edge of RAS) must precede the write transfer cycles. A masked write transfer is invoked by holding CAS "high", TRG "low", WE "low" and DSF "low" at the falling edge of RAS. The row address selected at the falling edge of RAS determines the RAM row address into which the data will be transferred. The column address selected at the falling edge of CAS determines the start address of the serial pointer of the SAM. After the write transfer is completed, the SDQ lines are set in the input mode so that serial data synchronized with the SC clock can be loaded. When consecutive write transfer operations are performed, new data must not be written into the serial register until the RAS cycle of the preceding write transfer is completed. Consequently, the SC clock must be held at a constant VIL or VIH during the RAS cycle. A rising edge of the SC clock is only allowed after the specified delay tCSD from the falling edge of the CAS, at which time a new row of data can be written in the serial register. Data transferred to SAM by read transfer cycle or split read transfer cycle can be written to the other address of RAM by write transfer cycle. However, the address to write data must be the same as that of the read transfer cycle (row address AX8). 34/37 ¡ Semiconductor MSM548262 Split Data Transfer and QSF The MSM548262 features a bidirectional split data transfer capability between the RAM and SAM. During split data transfer operation, the serial register is split into two halves which can be controlled independently. Split read or split write transfer operation can be performed to or from one half of the serial register, while serial data can be shifted into or out of the other half of the serial register. The most significant column address location (A8C) is controlled internally to determines which half of the serial register will be reloaded from the RAM. QSF is an output which indicates which half of the serial register is in an active state. QSF changes state when the last SC clock is applied to active split SAM. Split Read Transfer: RAS falling edge --- CAS = WE = DSF = "H", TRG = "L" Split read transfer consists of loading 256 words by 8 bits of data from a selected row of the split RAM into the corresponding non-active split SAM register. Serial data can be shifted out from the other half of the split SAM register simultaneously. During split read transfer operation, the RAM port input clocks do not have to be synchronized with the serial clock SC, thus eliminating timing restrictions as in the case of real time read transfers. A split read transfer can be performed after a delay of tSTS from the change of state of the QSF output is satisfied. Conventional (non-split) read transfer operation must precede split read transfer cycles. Masked Split Write Transfer: RAS falling edge --- CAS = DSF = "H", TRG = WE ="L" Split write transfer consists of loading 256 words by 8 bits of data from the non-active split SAM register into a selected row of the corresponding split RAM. Serial data can be shifted into the other half of the split SAM register simultaneously. During split write transfer operation, the RAM port input clocks do not have to be synchronized with the serial clock SC, thus allowing for real time transfer. This write transfer operation, which is the same as a mask write operation in RAM, can be selectively controlled for 8 DQis by inputing the mask data from DQ1 - DQ8 at the falling edge of RAS. A split write transfer can be performed after a delay of tSTS from the change of state of the QSF output is satisfied. A masked write transfer operation must precede split write transfer. The purpose is to switch the SAM port from output mode to input mode, and to set the initial TAP location prior to split write transfer operations. POWER UP Power must be applied to the RAS and TRG input signals to pull them "high" before, or at the same time as, the VCC supply is turned on. After power-up, a pause of 200 ms minimum is required with RAS and TRG held "high". After the pause, a minimum of 8 RAS and 8 SC dummy cycles must be performed to stabilize the internal circuitry, before valid read, write or transfer operations can begin. During the initialization period, the TRG signal must be held "high". If the internal refresh counter is used, a minimum 8 CAS before RAS cycles are required instead of 8 RAS cycles. (NOTE) INITIAL STATE AFTER POWER UP The initial state can not be guaranteed for various power up conditions and input signal levels. Therefore, it is recommended that the initial state be set after the initialization of the device is performed and before valid operations begin. 35/37 ¡ Semiconductor MSM548262 PACKAGE DIMENSIONS (Unit : mm) SOJ40-P-400-1.27 Mirror finish Package material Lead frame material Pin treatment Solder plate thickness Package weight (g) Epoxy resin 42 alloy Solder plating 5 mm or more 1.70 TYP. Notes for Mounting the Surface Mount Type Package The SOP, QFP, TSOP, SOJ, QFJ (PLCC), SHP and BGA are surface mount type packages, which are very susceptible to heat in reflow mounting and humidity absorbed in storage. Therefore, before you perform reflow mounting, contact Oki’s responsible sales person for the product name, package name, pin number, package code and desired mounting conditions (reflow method, temperature and times). 36/37 ¡ Semiconductor MSM548262 (Unit : mm) TSOPII44/40-P-400-0.80-K Mirror finish Package material Lead frame material Pin treatment Solder plate thickness Package weight (g) Epoxy resin 42 alloy Solder plating 5 mm or more 0.49 TYP. Notes for Mounting the Surface Mount Type Package The SOP, QFP, TSOP, SOJ, QFJ (PLCC), SHP and BGA are surface mount type packages, which are very susceptible to heat in reflow mounting and humidity absorbed in storage. Therefore, before you perform reflow mounting, contact Oki’s responsible sales person for the product name, package name, pin number, package code and desired mounting conditions (reflow method, temperature and times). 37/37