Infrared Light Emitting Diode in SMT Plastic Package OP280 • • • • Wide Beam Angle High Power Plastic Leadless Chip Carrier (PLCC-2) 880nm Wavelength The OP280 is a GaAlAs infrared LEDs mounted in a plastic SMT package. The device flat lens window which allows a wide beam angle. This device is packaged in a plastic leadless chip carrier (PLCC-2) that is suitable for single device or array applications. The OP280 is mechanically and spectrally matched to the OP580 phototransistor. Applications • • • • Non-Contact Position Sensing Datum detection Machine automation Optical encoders Relative Radiant Intensity vs. Angular Displacement 100% Relative Radiant Intensity 80% 60% OP280 40% 20% 0% -90 -60 -30 0 30 60 90 Angular Displacement (Degrees) Pb RoHS Optek reserves the right to make changes at any time in order to improve design and to supply the best product possible. OPTEK Technology Inc.— 1645 Wallace Drive, Carrollton, Texas 75006 Phone: (800) 341-4747 FAX: (972) 323– 2396 [email protected] www.optekinc.com A subsidiary of TT electronics plc SMT Infrared LED OP280 Absolute Maximum Ratings TA = 25o C unless otherwise noted Storage Temperature Range -40° C to +85° C Operating Temperature Range -25° C to +85° C 260° C(1) Lead Soldering Temperature Reverse Voltage 30 V Continuous Forward Current 50 mA 130 mW (2) Power Dissipation Notes: 1. Solder time less than 5 seconds at temperature extreme. 2. De-rate linearly at 2.17 mW/° C above 25° C. Electrical Characteristics (TA = 25°C unless otherwise noted) SYMBOL Ee(APT) 3. PARAMETER MIN Apertured Radiant Incidence TYP MAX UNITS 2 0.5 CONDITIONS (3) mW/cm IF = 20mA VF Forward Voltage 1.5 V IF = 20mA IR Reverse Current 100 µA VR = 2.0V λP Peak Emission Wavelength 890 nm IF = 10mA ΘHP Emission Angle at Half Power Points 100 Deg. IF = 20mA tr, tf Rise and Fall Time 500 ns IF(PEAK) = 100mA, PW = 10µs, 10% D.C. Ee(APT) is a measurement of the apertured radiant incidence upon a sensing area 0.081” (2.06mm) in diameter, perpendicular to and centered on the mechanical axis of the lens, and 0.590” (14.99mm) from the measurement surface. Ee(APT) is not necessarily uniform within the measured area. Relative Radiant Intensity vs. Forward Current vs. Temperature 350% 1.5 Normalized at IF = 20mA, TA = 20°C. Temperatures stepped in 20°C Increments -40°C Temperatures stepped in 20 °C Increments -40°C 1.4 250% 200% 150% 100°C 100% Forward Voltage (V) Relative Radiant Intensity 300% Forward Voltage vs. Forward Current vs. Temperature 1.3 100°C 1.2 1.1 50% 0 10 20 30 40 50 Forward Current (mA) OPTEK Technology Inc.— 1645 Wallace Drive, Carrollton, Texas 75006 Phone: (800) 341-4747 FAX: (972) 323– 2396 [email protected] www.optekinc.com 1.0 0 10 20 30 40 50 Forward Current (mA) Issue 1.1 07.05 Page 2 of 3 SMT Infrared LED OP280 2 1 ANODE MARK PIN FUNCTION 1 Cathode 2 Anode RECOMMENDED SOLDER PADS [4.50±0.10] .177±.0039 [1.50±0.10] .059±.0039 [1.50±0.10] .059±.0039 [2.60±0.10] .102±.0039 OPTEK Technology Inc.— 1645 Wallace Drive, Carrollton, Texas 75006 Phone: (800) 341-4747 FAX: (972) 323– 2396 [email protected] www.optekinc.com Issue 1.1 07.05 Page 3 of 3