polyfet rf devices F1012 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. 80 Watts Gemini Package Style AH TM "Polyfet" process features gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance HIGH EFFICIENCY, LINEAR, HIGH GAIN, LOW NOISE o ABSOLUTE MAXIMUM RATINGS (TC = 25 C) Total Device Dissipation Junction to Case Thermal Resistance 290 Watts 0.6 o C/W Maximum Junction Temperature 200 o C Storage Temperature DC Drain Current -65 o C to 150o C RF CHARACTERISTICS ( SYMBOL PARAMETER Gps Common Source Power Gai η Drain Efficiency VSWR MIN TYP 12 A Drain to Source Voltage Gate to Source Voltage 70 V 30V 70 V 80WATTS OUTPUT ) MAX 10 60 Load Mismatch Toleranc Drain to Gate Voltage 20:1 UNITS TEST CONDITIONS dB Idq = 1.2 A, Vds = 28.0 V, F = 400 MHz % Idq = 1.2 A, Vds = 28.0 V, F = 400 MHz Relative Idq = 1.2 A, Vds = 28.0 V, F = 400 MHz ELECTRICAL CHARACTERISTICS (EACH SIDE) SYMBOL PARAMETER MIN TYP MAX 65 UNITS TEST CONDITIONS Bvdss Drain Breakdown Voltag Idss Zero Bias Drain Curren Igss Gate Leakage Curren Vgs Gate Bias for Drain Curren gM Forward Transconductanc 2.4 Mho Vds = 10V, Vgs = 5V Rdson Saturation Resistanc 0.5 Ohm Vgs = 20V, Ids = 12 A Idsat Saturation Curren 16.5 Amp Vgs = 20V, Vds = 10V Ciss Common Source Input Capacitanc 99 pF Vds = 28.0 V, Vgs = 0V, F = 1 MHz Crss Common Source Feedback Capacitanc 12 pF Vds = 28.0 V, Vgs = 0V, F = 1 MHz Coss Common Source Output Capacitanc 60 pF Vds = 28.0 V, Vgs = 0V, F = 1 MHz 1 V Ids = 0.15 A, Vgs = 0V 3 mA Vds = 28.0 V, Vgs = 0V 1 uA Vds = 0 V, Vgs = 30V 7 V Ids = 0.3 A, Vgs = Vds POLYFET RF DEVICES REVISION 8/1/97 1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com F1012 POUT VS PIN GRAPH CAPACITANCE VS VOLTAGE F1012 PIN VS POUT F=400MHZ; IDQ=1.2A; VDS=28V F1B 3DIE CAPACITANCE 100 1000 14 90 13.5 80 13 70 12.5 60 50 Coss 100 12 40 Ciss 11.5 30 Efficiency = 55 % 11 20 Crss 10.5 10 0 10 10 0 1 2 3 4 5 6 7 8 0 9 5 10 PIN IN WATTS 15 20 25 30 VDS IN VOLTS IV CURVE ID AND GM VS VGS F1B 3DIE IV CURVE F1B 3 DIE GM & ID vs VG 20 100 18 16 Id 14 10 12 10 8 6 1 4 2 Gm 0 0 2 4 6 8 10 12 14 16 18 20 0.1 Vds in Volts 0 Vg = 2V Vg = 4V Vg = 6V Vg = 8V S11 AND S22 SMITH CHART Vg = 10V 2 Vg = 12V 4 6 8 10 12 14 Vgs in Volts PACKAGE DIMENSIONS IN INCHES POLYFET RF DEVICES REVISION 8/1/97 1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com