polyfet rf devices F1401 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. 35 Watts Single Ended Package Style AP TM "Polyfet" process features gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance HIGH EFFICIENCY, LINEAR, HIGH GAIN, LOW NOISE o ABSOLUTE MAXIMUM RATINGS (TC = 25 C) Total Device Dissipation 50 Watts Junction to Case Thermal Resistance Maximum Junction Temperature 3.5 o C/W 200 o C Storage Temperature DC Drain Current Drain to Gate Voltage Drain to Source Voltage Gate to Source Voltage -65 o C to 150o C 2 A 150 V 150 V 30V RF CHARACTERISTICS ( SYMBOL PARAMETER Gps Common Source Power Gai η Drain Efficiency VSWR MIN TYP 35WATTS OUTPUT ) MAX 10 75 Load Mismatch Toleranc 20:1 UNITS TEST CONDITIONS dB Idq = 0.1 A, Vds = 50.0 V, F = 400 MHz % Idq = 0.1 A, Vds = 50.0 V, F = 400 MHz Relative Idq = 0.1 A, Vds = 50.0 V, F = 400 MHz ELECTRICAL CHARACTERISTICS (EACH SIDE) SYMBOL PARAMETER MIN Bvdss Drain Breakdown Voltag 125 Idss Zero Bias Drain Curren Igss Gate Leakage Curren Vgs Gate Bias for Drain Curren gM Forward Transconductanc Rdson Saturation Resistanc Idsat TYP 1 MAX UNITS TEST CONDITIONS V Ids = 0.05 A, Vgs = 0V 2 mA Vds = 50.0 V, Vgs = 0V 1 uA Vds = 0 V, Vgs = 30V 7 V Ids = 0.1 A, Vgs = Vds 0.8 Mho Vds = 10V, Vgs = 5V 1 Ohm Vgs = 20V, Ids = 2 A Saturation Curren 4.8 Amp Vgs = 20V, Vds = 10V Ciss Common Source Input Capacitanc 45 pF Vds = 50.0 V, Vgs = 0V, F = 1 MHz Crss Common Source Feedback Capacitanc 2.2 pF Vds = 50.0 V, Vgs = 0V, F = 1 MHz Coss Common Source Output Capacitanc 20 pF Vds = 50.0 V, Vgs = 0V, F = 1 MHz POLYFET RF DEVICES REVISION 8/1/97 1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com F1401 POUT VS PIN GRAPH CAPACITANCE VS VOLTAGE F1E 1 DIE CAPACITANCE F-1401 PIN VS POUT F=400 MHZ; IDQ=0.2A; VDS=50.0V 40 16 35 15 30 14 25 13 20 12 15 11 10 10 100 Ciss Coss 10 Crss Efficiency = 75% 5 9 0 8 0 0.5 1 1.5 2 2.5 3 3.5 1 4 0 PIN IN WATTS POUT 5 10 15 IV CURVE 25 30 35 40 45 50 ID AND GM VS VGS F1E 1 DIE IV F1E 1 DIE ID & GM Vs VG 5 Id in amps; Gm in mhos 10.00 4.5 4 3.5 ID IN AMPS 20 VDS IN VOLTS GAIN 3 2.5 2 1.5 1 0.5 Id 1.00 gM 0.10 0.01 0 0 2 vg=2v 4 6 Vg=4v 8 10 12 VDSINVOLTS Vg=6v 14 vg=8v S11 AND S22 SMITH CHART 16 0 18 20 0 2 4 6 8 10 12 14 16 18 Vgs in Volts vg=12v PACKAGE DIMENSIONS IN INCHES POLYFET RF DEVICES REVISION 8/1/97 1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com