POLYFET F1108

polyfet rf devices
F1108
General Description
PATENTED GOLD METALIZED
SILICON GATE ENHANCEMENT MODE
RF POWER VDMOS TRANSISTOR
Silicon VDMOS and LDMOS
transistors designed specifically
for broadband RF applications.
Suitable for Military Radios,
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
Laser Driver and others.
80 Watts Gemini
Package Style AK
TM
"Polyfet" process features
gold metal for greatly extended
lifetime. Low output capacitance
and high F t enhance broadband
performance
HIGH EFFICIENCY, LINEAR,
HIGH GAIN, LOW NOISE
o
ABSOLUTE MAXIMUM RATINGS (TC = 25 C)
Total
Device
Dissipation
Junction to
Case Thermal
Resistance
170 Watts
0.95 o C/W
Maximum
Junction
Temperature
200 o C
Storage
Temperature
DC Drain
Current
-65 o C to 150o C
8 A
RF CHARACTERISTICS (
SYMBOL
PARAMETER
Gps
Common Source Pow er Gain
η
Drain Efficiency
VSWR
MIN
TYP
Drain to
Source
Voltage
Gate to
Source
Voltage
70 V
30V
70 V
80WATTS OUTPUT )
MAX
11
55
Load Mismatch Tolerance
Drain to
Gate
Voltage
20:1
UNITS
TEST CONDITIONS
dB
Idq = 0.8 A, Vds = 28.0 V, F = 400 MHz
%
Idq = 0.8 A, Vds = 28.0 V, F = 400 MHz
Relative
Idq = 0.8 A, Vds = 28.0 V, F = 400 MHz
ELECTRICAL CHARACTERISTICS (EACH SIDE)
SYMBOL
PARAMETER
MIN
TYP
MAX
Bvdss
Drain Breakdow n Voltage
65
Idss
Zero Bias Drain Current
2
Igss
Gate Leakage Current
Vgs
Gate Bias for Drain Current
gM
Forw ard Transconductance
Rdson
UNITS
V
1
TEST CONDITIONS
Ids =
0.1 A,
Vgs = 0V
mA
Vds = 28.0 V,
Vgs = 0V
1
uA
Vds = 0 V,
Vgs = 30V
7
V
Ids = 0.2 A,
Vgs = Vds
2
Mho
Vds = 10V, Vgs = 5V
Saturation Resistance
0.7
Ohm
Vgs = 20V, Ids = 8 A
Idsat
Saturation Current
12
Amp
Vgs = 20V, Vds = 10V
Ciss
Common Source Input Capacitance
80
pF
Vds = 28.0 V, Vgs = 0V, F = 1 MHz
Crss
Common Source Feedback Capacitance
10
pF
Vds = 28.0 V, Vgs = 0V, F = 1 MHz
Coss
Common Source Output Capacitance
60
pF
Vds = 28.0 V, Vgs = 0V, F = 1 MHz
POLYFET RF DEVICES
REVISION
8/1/97
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:[email protected] URL:w w w .polyfet.com
F1108
POUT VS PIN GRAPH
CAPACITANCE VS VOLTAGE
F1J 2 DICE CAPACITANCE
F1108 POUT VS PIN F=400
MHZ; IDQ=0.8A; VDS=28.0V
15.50
Coss
14.50
100
13.50
12.50
11.50
Efficiency = 55%
GAIN IN DB
Ciss
10
Crss
10.50
9.50
0
1
2
3
4
5
PININ WATTS
1
6
POUT
0
5
10
15
20
25
30
VDS IN VOLTS
GAIN
IV CURVE
ID AND GM VS VGS
F1J2 DICE ID & GM Vs VG
F1J 2 DIE IV CU RVE
100.00
Id in amps; Gm in mhos
POUT IN WATTS
1000
90
80
70
60
50
40
30
20
10
0
18
16
14
12
10
8
6
4
2
0
Id
10.00
gM
1.00
0.10
0
2
4
6
8
10
12
14
16
18
20
0
Vds in Volts
Vg = 2V
Vg = 4V
Vg = 6V
Vg = 8V
Vg = 10V
S11 AND S22 SMITH CHART
2
4
6
8
10
12
14
16
18
Vgs in Volts
Vg = 12V
PACKAGE DIMENSIONS IN INCHES
Tolerance 0.XX +/- 0.01 0.XXX +/- 0.005 inches
POLYFET RF DEVICES
REVISION
8/1/97
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:[email protected] URL:w w w .polyfet.com