polyfet rf devices F1108 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. 80 Watts Gemini Package Style AK TM "Polyfet" process features gold metal for greatly extended lifetime. Low output capacitance and high F t enhance broadband performance HIGH EFFICIENCY, LINEAR, HIGH GAIN, LOW NOISE o ABSOLUTE MAXIMUM RATINGS (TC = 25 C) Total Device Dissipation Junction to Case Thermal Resistance 170 Watts 0.95 o C/W Maximum Junction Temperature 200 o C Storage Temperature DC Drain Current -65 o C to 150o C 8 A RF CHARACTERISTICS ( SYMBOL PARAMETER Gps Common Source Pow er Gain η Drain Efficiency VSWR MIN TYP Drain to Source Voltage Gate to Source Voltage 70 V 30V 70 V 80WATTS OUTPUT ) MAX 11 55 Load Mismatch Tolerance Drain to Gate Voltage 20:1 UNITS TEST CONDITIONS dB Idq = 0.8 A, Vds = 28.0 V, F = 400 MHz % Idq = 0.8 A, Vds = 28.0 V, F = 400 MHz Relative Idq = 0.8 A, Vds = 28.0 V, F = 400 MHz ELECTRICAL CHARACTERISTICS (EACH SIDE) SYMBOL PARAMETER MIN TYP MAX Bvdss Drain Breakdow n Voltage 65 Idss Zero Bias Drain Current 2 Igss Gate Leakage Current Vgs Gate Bias for Drain Current gM Forw ard Transconductance Rdson UNITS V 1 TEST CONDITIONS Ids = 0.1 A, Vgs = 0V mA Vds = 28.0 V, Vgs = 0V 1 uA Vds = 0 V, Vgs = 30V 7 V Ids = 0.2 A, Vgs = Vds 2 Mho Vds = 10V, Vgs = 5V Saturation Resistance 0.7 Ohm Vgs = 20V, Ids = 8 A Idsat Saturation Current 12 Amp Vgs = 20V, Vds = 10V Ciss Common Source Input Capacitance 80 pF Vds = 28.0 V, Vgs = 0V, F = 1 MHz Crss Common Source Feedback Capacitance 10 pF Vds = 28.0 V, Vgs = 0V, F = 1 MHz Coss Common Source Output Capacitance 60 pF Vds = 28.0 V, Vgs = 0V, F = 1 MHz POLYFET RF DEVICES REVISION 8/1/97 1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:[email protected] URL:w w w .polyfet.com F1108 POUT VS PIN GRAPH CAPACITANCE VS VOLTAGE F1J 2 DICE CAPACITANCE F1108 POUT VS PIN F=400 MHZ; IDQ=0.8A; VDS=28.0V 15.50 Coss 14.50 100 13.50 12.50 11.50 Efficiency = 55% GAIN IN DB Ciss 10 Crss 10.50 9.50 0 1 2 3 4 5 PININ WATTS 1 6 POUT 0 5 10 15 20 25 30 VDS IN VOLTS GAIN IV CURVE ID AND GM VS VGS F1J2 DICE ID & GM Vs VG F1J 2 DIE IV CU RVE 100.00 Id in amps; Gm in mhos POUT IN WATTS 1000 90 80 70 60 50 40 30 20 10 0 18 16 14 12 10 8 6 4 2 0 Id 10.00 gM 1.00 0.10 0 2 4 6 8 10 12 14 16 18 20 0 Vds in Volts Vg = 2V Vg = 4V Vg = 6V Vg = 8V Vg = 10V S11 AND S22 SMITH CHART 2 4 6 8 10 12 14 16 18 Vgs in Volts Vg = 12V PACKAGE DIMENSIONS IN INCHES Tolerance 0.XX +/- 0.01 0.XXX +/- 0.005 inches POLYFET RF DEVICES REVISION 8/1/97 1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:[email protected] URL:w w w .polyfet.com