CM600HU-24H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Single IGBTMOD™ U-Series Module 600 Amperes/1200 Volts A B 2 - M4 NUTS E H 2 - M8 NUTS K L N 4 - Mounting Holes J F G C G E E D C CM Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of one IGBT Transistor in a single configuration with a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. TC Measured Point M P E Features: □ Low Drive Power □ Low VCE(sat) □ Discrete Super-Fast Recovery Free-Wheel Diode □ Isolated Baseplate for Easy Heat Sinking C E G Applications: □ AC Motor Control □ Motion/Servo Control □ UPS □ Welding Power Supplies □ Laser Power Supplies Outline Drawing and Circuit Diagram Dimensions Inches A 4.33 Millimeters 110.0 Dimensions Inches Millimeters H 0.96 24.5 B 3.66±0.01 93.0±0.25 J 0.22 5.5 C 3.15 80.0 K 1.14 29.0 D 2.44±0.01 62.0±0.25 L E 0.53 13.5 M F 0.37 9.5 N G 0.57 14.5 P 0.85 1.34 +0.04/-0.02 0.26 Dia. 21.5 Ordering Information: Example: Select the complete module number you desire from the table - i.e. CM600HU-24H is a 1200V (VCES), 600 Ampere Single IGBTMOD™ Power Module. 34 +1.0/-0.5 6.5 Dia. 1.02 +0.04/-0.02 26 +1.0/-0.5 Type Current Rating Amperes VCES Volts (x 50) CM 600 24 11 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM600HU-24H Single IGBTMOD™ U-Series Module 600 Amperes/1200 Volts Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Junction Temperature Symbol CM600HU-24H Units Tj -40 to 150 °C Tstg -40 to 125 °C Collector-Emitter Voltage (G-E SHORT) VCES 1200 Volts Gate-Emitter Voltage (C-E SHORT) VGES ±20 Volts IC 600 Amperes ICM 1200* Amperes IE 600 Amperes Peak Emitter Current** IEM 1200* Amperes Maximum Collector Dissipation (Tc = 25°C) Pc 3100 Watts Mounting Torque, M8 Main Terminal – 95 in-lb Mounting Torque, M6 Mounting – 40 in-lb Storage Temperature Collector Current (Tc = 25°C) Peak Collector Current (Tj ≤ 150°C) Emitter Current** (Tc = 25°C) Mounting Torque, M4 Terminal – 15 in-lb Weight – 600 Grams Viso 2500 Volts Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) * Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Static Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Cutoff Current ICES VCE = VCES, VGE = 0V – – 2 mA Gate Leakage Voltage IGES VGE = VGES, VCE = 0V – – 0.5 µA 4.5 6 7.5 Volts – 2.9 3.7 Volts – Volts – nC Gate-Emitter Threshold Voltage VGE(th) IC = 60mA, VCE = 10V Collector-Emitter Saturation Voltage VCE(sat) IC = 600A, VGE = 15V, Tj = 25°C IC = 600A, VGE = 15V, Tj = 125°C – Total Gate Charge QG VCC = 600V, IC = 600A, VGE = 15V – 2250 Emitter-Collector Voltage* VEC IE = 600A, VGE = 0V – – 3.2 Typ. Max. 2.85 Volts * Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Input Capacitance Cies Output Capacitance Coes Reverse Transfer Capacitance Cres Resistive Turn-on Delay Time td(on) Load Rise Time Switch Turn-off Delay Time Times Test Conditions Min. Units – – 90 nf VCE = 10V, VGE = 0V – – 31.5 nf – – 18 nf VCC = 600V, IC = 600A, – – 300 ns tr VGE1 = VGE2 = 15V, – – 700 ns td(off) RG = 2.1V, Resistive – – 450 ns Fall Time tf Load Switching Operation – – 350 ns Diode Reverse Recovery Time trr IE = 600A, diE/dt = -1200A/µs – – 300 ns Diode Reverse Recovery Charge Qrr IE = 600A, diE/dt = -1200A/µs – 3.3 – µC Min. Typ. Max. Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Test Conditions Units Thermal Resistance, Junction to Case Rth(j-c)Q Per IGBT Module – – 0.04 °C/W Thermal Resistance, Junction to Case Rth(j-c)D Per FWDi Module – – 0.06 °C/W Rth(c-f) Per Module, Thermal Grease Applied – 0.015 – °C/W Contact Thermal Resistance 12 Symbol Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM600HU-24H Single IGBTMOD™ U-Series Module 600 Amperes/1200 Volts OUTPUT CHARACTERISTICS (TYPICAL) 1200 15 VGE = 20V 960 11 720 10 480 9 240 8 0 2 4 6 8 720 480 240 VGE = 15V Tj = 25°C Tj = 125°C 4 3 2 1 0 0 10 4 8 12 16 0 20 240 480 720 960 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-CURRENT, IC, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) 104 10 102 IC = 600A 4 IC = 240A 12 16 101 1.0 20 2.0 2.5 3.0 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 103 td(off) tf 102 tr VCC = 600V VGE = ±15V RG = 2.1 Ω Tj = 125°C 102 COLLECTOR CURRENT, IC, (AMPERES) Coes 100 Cres 103 Irr 101 101 101 102 EMITTER CURRENT, IE, (AMPERES) 101 102 GATE CHARGE, VGE di/dt = -1200A/µsec Tj = 25°C trr 100 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 102 102 10-1 10-1 3.5 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) td(on) 101 101 1.5 GATE-EMITTER VOLTAGE, VGE, (VOLTS) REVERSE RECOVERY TIME, trr, (ns) 103 8 101 VGE = 0V f = 1MHz 0 4 102 Cies 100 103 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 2 103 REVERSE RECOVERY CURRENT, Irr, (AMPERES) 6 CAPACITANCE, Cies, Coes, Cres, (nF) IC = 1200A 8 0 1200 Tj = 25°C Tj = 25°C EMITTER CURRENT, IE, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 960 0 0 SWITCHING TIME, (ns) 5 VCE = 10V Tj = 25°C Tj = 125°C 12 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) Tj = 25oC COLLECTOR CURRENT, IC, (AMPERES) COLLECTOR CURRENT, IC, (AMPERES) 1200 COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) TRANSFER CHARACTERISTICS (TYPICAL) IC = 600A VCC = 400V 16 VCC = 600V 12 8 4 0 0 800 1600 2400 3200 GATE CHARGE, QG, (nC) 13 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT) 10-3 101 100 10-2 10-1 100 10-1 10-1 10-2 10-2 10-3 10-5 TIME, (s) 14 101 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.04°C/W 10-4 10-3 10-3 NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) Zth = Rth • (NORMALIZED VALUE) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) Zth = Rth • (NORMALIZED VALUE) CM600HU-24H Single IGBTMOD™ U-Series Module 600 Amperes/1200 Volts TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) 10-3 101 100 10-2 10-1 100 101 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.06°C/W 10-1 10-1 10-2 10-2 10-3 10-5 TIME, (s) 10-4 10-3 10-3