CM100DUS-12F Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Trench Gate Design Dual IGBTMOD™ 100 Amperes/600 Volts P - NUTS x Z DEEP (3 PLACES) TC MEASURED POINT A N D Q (2 PLACES) Y C2E1 E2 E C1 E2G2 CM W F G X G1E1 B M K K V T R J #110 TAB x H THICK (4 PLACES) T U U Description: Powerex IGBTMOD™ Modules are designed for use in high frequency applications; 30 kHz for hard switching applications and 60 to 70 kHz for soft switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. F S C L G2 E2 RTC C2E1 E2 C1 Features: £ Low VCE(sat) £ Low ESW(off) £ Discrete Super-Fast Recovery Free-Wheel Diode £ Isolated Baseplate for Easy Heat Sinking RTC E1 G1 Outline Drawing and Circuit Diagram Dimensions Inches A 3.70 94.0 N 0.28 7.0 B 1.89 48.0 P M5 M5 C Millimeters 1.18 +0.04/-0.02 30.0 +1.0/-0.5 80.0±0.25 Dimensions Inches Q 0.26 Dia. R 0.02 Millimeters 6.5 Dia. D 3.15±0.01 4.0 E 0.43 11.0 S 0.30 7.5 F 0.16 4.0 T 0.63 16.0 G 0.71 18.0 U 0.10 2.5 H 0.02 0.5 V 1.0 25.0 Applications: £ Power Supplies £ Induction Heating £ Welders Ordering Information: Example: Select the complete module number you desire from the table - i.e. CM100DUS-12F is a 600V (VCES), 100 Ampere Dual IGBTMOD™ Power Module. J 0.53 13.5 W 0.94 24.0 K 0.91 23.0 X 0.51 13.0 Type Current Rating Amperes VCES Volts (x 50) L 0.83 21.2 Y 0.47 12.0 CM 100 12 M 0.67 17.0 Z 0.47 12.0 1 Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM100DUS-12F Trench Gate Design Dual IGBTMOD™ 100 Amperes/600 Volts Absolute Maximum Ratings, Tj = 25°C unless otherwise specified Ratings Symbol CM100DUS-12F Units Junction Temperature Tj -40 to 150 °C Storage Temperature Tstg -40 to 125 °C Collector-Emitter Voltage (G-E SHORT) VCES 600 Volts Gate-Emitter Voltage (C-E SHORT) VGES ±20 Volts Collector Current (Tc = 25°C) IC 100 Amperes ICM 200* Amperes IE 100 Amperes Peak Emitter Current** IEM 200* Amperes Maximum Collector Dissipation (Tc = 25°C, Tj ≤ 150°C) Pc 350 Watts Mounting Torque, M5 Main Terminal – 31 in-lb Mounting Torque, M6 Mounting – 40 in-lb Weight – 310 Grams Viso 2500 Volts Peak Collector Current Emitter Current** (Tc = 25°C) Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) * Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Static Electrical Characteristics, Tj = 25°C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Collector-Cutoff Current ICES VCE = VCES, VGE = 0V – – 1 Gate Leakage Current IGES VGE = VGES, VCE = 0V IC = 10mA, VCE = 10V – – 20 μA 5 6 7 Volts Gate-Emitter Threshold Voltage VGE(th) Collector-Emitter Saturation Voltage VCE(sat) Units mA IC = 100A, VGE = 15V, Tj = 25°C 1.7 2.0 2.7 Volts IC = 100A, VGE = 15V, Tj = 125°C – 1.95 – Volts – nC Total Gate Charge QG VCC = 300V, IC = 100A, VGE = 15V – 620 Emitter-Collector Voltage** VEC IE = 100A, VGE = 0V – – 2.6 Test Conditions Min. Typ. Max. – – VCE = 10V, VGE = 0V – – – Volts **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Dynamic Electrical Characteristics, Tj = 25°C unless otherwise specified Characteristics Symbol Input Capacitance Cies Output Capacitance Coes Reverse Transfer Capacitance Cres Resistive Turn-on Delay Time td(on) Load Rise Time Switch Turn-off Delay Time Times Fall Time 1.8 nf nf – 1 nf – – 100 ns tr VCC = 300V, IC = 100A, VGE1 = VGE2 = 15V, – – 80 ns td(off) RG = 6.3Ω, Inductive – – 300 ns tf Load Switching Operation – – 150 ns Diode Reverse Recovery Time** trr IE = 100A – – 150 ns Diode Reverse Recovery Charge** Qrr – 1.9 – µC **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). 2 27 Units Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM100DUS-12F Trench Gate Design Dual IGBTMOD™ 100 Amperes/600 Volts Thermal and Mechanical Characteristics, Tj = 25°C unless otherwise specified Characteristics Symbol Thermal Resistance, Junction to Case Test Conditions Rth(j-c)Q Min. Per IGBT 1/2 Module, Tc Reference Typ. Max. – Units 0.35 °C/W Point per Outline Drawing Thermal Resistance, Junction to Case Rth(j-c)D Per FWDi 1/2 Module, Tc Reference – – 0.70 °C/W – 0.23** – °C/W – 0.07 – °C/W Point per Outline Drawing Thermal Resistance, Junction to Case Rth(j-c')Q Per IGBT 1/2 Module, Tc Reference Point Under Chip Contact Thermal Resistance Rth(c-f) Per Module, Thermal Grease Applied ** If you use this value, Rth(f-a) should be measured just under the chips. Tj = 25°C 13 15 160 9 VGE = 20V 120 8 80 7.5 40 0 101 10 9.5 8.5 11 SWITCHING LOSS, ESW, (mJ/PULSE) 7 0 1 2 3 101 2.0 1.5 1.0 0.5 0 102 VGE = 15V Tj = 25°C Tj = 125°C 2.5 0 40 80 120 160 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) COLLECTOR-CURRENT, IC, (AMPERES) COLLECTOR-CURRENT, IC, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) 103 5 4 3 IC = 200A IC = 100A 2 IC = 40A 1 0 6 8 10 102 Tj = 25°C Tj = 25°C EMITTER CURRENT, IE, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 100 10-1 100 4 3.0 VCC = 300V VGE = 15V RG = 6.3 Ω Tj = 125C HALF-BRIDGE SWITCHING ESW(on) ESW(off) 12 14 16 18 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 20 CAPACITANCE, Cies, Coes, Cres, (nF) COLLECTOR CURRENT, IC, (AMPERES) 200 COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) SWITCHING LOSS VS. COLLECTOR CURRENT (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) OUTPUT CHARACTERISTICS (TYPICAL) 102 101 100 0.5 1.0 1.5 2.0 2.5 3.0 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) 200 VGE = 0V f = 1MHz Cies 101 100 Coes Cres 10-1 10-1 100 101 102 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 3 Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM100DUS-12F Trench Gate Design Dual IGBTMOD™ 100 Amperes/600 Volts HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) td(on) 101 tr 100 100 101 trr Irr 100 100 102 101 100 102 EMITTER CURRENT, IE, (AMPERES) REVERSE RECOVERY SWITCHING LOSS VS. EMITTER CURRENT (TYPICAL) REVERSE RECOVERY SWITCHING LOSS VS. GATE RESISTANCE (TYPICAL) 101 REVERSE RECOVERY SWITCHING LOSS, Err, (mJ/PULSE) REVERSE RECOVERY SWITCHING LOSS, Err, (mJ/PULSE) 101 COLLECTOR CURRENT, IC, (AMPERES) 100 VCC = 300V VGE = 15V RG = 6.2 Ω Tj = 125°C Inductive Load C Snubber at Bus 10-1 101 102 103 EMITTER CURRENT, IE, (AMPERES) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) Zth = Rth • (NORMALIZED VALUE) Irr 101 101 10-3 101 100 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) 10-2 10-1 100 101 Single Pulse TC = 25C Per Unit Base = Rth(j-c) = 0.7°C/W 10-1 10-2 10-2 10-5 TIME, (s) 10-4 100 10-1 100 101 10-3 10-3 IC = 100A 16 VCC = 200V 12 VCC = 300V 8 4 0 0 100 200 300 400 500 600 700 800 900 GATE CHARGE, QG, (nC) VCC = 300V VGE = 15V IC = 100A Tj = 125°C Inductive Load C Snubber at Bus GATE RESISTANCE, RG, () 10-1 10-3 4 trr 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) tf VCC = 300V VGE = 15V RG = 6.3 Ω Tj = 125°C REVERSE RECOVERY CURRENT, Irr, (AMPERES) td(off) GATE CHARGE, VGE 102 102 NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) Zth = Rth • (NORMALIZED VALUE) 102 VCC = 300V VGE = 15V RG = 6.3 Ω Tj = 125°C 102 REVERSE RECOVERY TIME, trr, (ns) SWITCHING TIME, (ns) 103 REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 10-3 101 100 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS ( IGBT) 10-2 10-1 100 101 Single Pulse TC = 25C Per Unit Base = Rth(j-c) = 0.35°C/W 10-1 10-1 10-2 10-2 10-3 10-5 TIME, (s) 10-4 10-3 10-3