CM400DU-34KA Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Dual IGBTMOD™ KA-Series Module 400 Amperes/1700 Volts A TC MEASURED POINT B F G CL T - (4 TYP.) M N Z P C E CL X LABEL R Q AA Y P Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a halfbridge configuration with each transistor having a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. W(4 PLACES) S - (3 PLACES) L K J H V D U G2 E2 Features: □ Low Drive Power □ Low VCE(sat) □ Discrete Super-Fast Recovery Free-Wheel Diode □ Isolated Baseplate for Easy Heat Sinking C2E1 C1 E2 E1 G1 Outline Drawing and Circuit Diagram Dimensions Inches Millimeters Dimensions Inches A 5.51 B 5.12 C D Millimeters 140.0 P 0.57 14.5 130.0 Q 1.57 40.0 5.12 130.0 R 2.56 65.0 1.38 35.0 S M8 M8 E 4.33 110.0 T 0.26 Dia. 6.5 Dia. F 4.33 110.0 S 0.32 8.0 G 0.39 10.0 V 0.97 24.5 H 0.45 11.5 W M4 M4 J 0.54 13.8 X 0.59 15.0 K 1.72 43.8 Y 0.35 9.0 L 1.42 36.0 Z 1.02 26.0 M 0.39 10.0 AA 0.79 20.0 N 0.80 20.4 Applications: □ AC Motor Control □ Motion/Servo Control □ UPS □ Welding Power Supplies □ Laser Power Supplies Ordering Information: Example: Select the complete module number you desire from the table - i.e. CM400DU-34KA is a 1700V (VCES), 400 Ampere Dual IGBTMOD™ Power Module. Type Current Rating Amperes VCES Volts (x 50) CM 400 34 1 Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM400DU-34KA Dual IGBTMOD™ KA-Series Module 400 Amperes/1700 Volts Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Symbol CM400DU-34KA Units Junction Temperature Tj -40 to 150 °C Storage Temperature Tstg -40 to 125 °C Collector-Emitter Voltage (G-E SHORT) VCES 1700 Volts Gate-Emitter Voltage (C-E SHORT) VGES ±20 Volts IC 400 Amperes ICM 800* Amperes Collector Current (Tc = 25°C) Peak Collector Current Emitter Current** (Tc = 25°C) IE 400 Amperes Peak Emitter Current** IEM 800* Amperes Maximum Collector Dissipation (Tc = 25°C, Tj ≤ 150°C) Pc 1950 Watts Mounting Torque, M8 Main Terminal – 95 in-lb Mounting Torque, M6 Mounting – 40 in-lb G(E) Terminal, M4 – 15 in-lb – 1200 Grams Viso 3500 Volts Weight Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) * Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Static Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Cutoff Current ICES VCE = VCES, VGE = 0V – – 1 mA Gate Leakage Current IGES VGE = VGES, VCE = 0V – – 0.5 µA 4.0 5.5 7.0 Volts – 3.2 4.1 Volts – Volts – nC Gate-Emitter Threshold Voltage VGE(th) IC = 40mA, VCE = 10V Collector-Emitter Saturation Voltage VCE(sat) IC = 400A, VGE = 15V, Tj = 25°C IC = 400A, VGE = 15V, Tj = 125°C – Total Gate Charge QG VCC = 1000V, IC = 400A, VGE = 15V – 1800 Emitter-Collector Voltage** VEC IE = 400A, VGE = 0V, Tj = 25°C – – 4.6 Volts IE = 400A, VGE = 0V, Tj = 125°C – 2.2 – Volts Test Conditions Min. Typ. Max. Units – – 57.0 nf VCE = 10V, VGE = 0V – – 9.6 nf 3.8 **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Input Capacitance Cies Output Capacitance Coes Reverse Transfer Capacitance Cres Resistive Turn-on Delay Time td(on) Load Rise Time Switch Turn-off Delay Time Times Fall Time Diode Reverse Recovery Time** Diode Reverse Recovery Charge** – – VCC = 1000V, IC = 400A, – – tr VGE1 = VGE2 = 15V, – – 300 ns td(off) RG = 1.0⍀, Resistive – – 1000 ns tf Inductive Load – – 800 ns trr Switching Operation – – 600 ns – 18.9 – µC Qrr IE = 400A **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). 2 3.0 1000 nf ns Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM400DU-34KA Dual IGBTMOD™ KA-Series Module 400 Amperes/1700 Volts Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Thermal Resistance, Junction to Case Rth(j-c)Q Per IGBT 1/2 Module – – 0.064 °C/W Thermal Resistance, Junction to Case Rth(j-c)D Per FWDi 1/2 Module – – 0.11 °C/W Rth(c-f) Per Module, Thermal Grease Applied – 0.010 – °C/W Rth(j-c')Q Tc Measured Point – – 0.025* °C/W Contact Thermal Resistance Thermal Resistance (Under Chips - IGBT Part) * If you use this value, Rth(f-a) should be measured just under the chips. COLLECTOR CURRENT, IC, (AMPERES) 700 800 6 11 14 12 600 10 500 400 9 300 200 8 100 VCE = 10V Tj = 25°C Tj = 125°C 700 600 500 400 300 200 100 0 0 0 2 4 6 8 10 VGE = 15V Tj = 25°C Tj = 125°C 5 4 3 2 1 0 0 4 8 12 16 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 0 20 200 400 600 CAPACITANCE VS. VCE (TYPICAL) 102 Tj = 25°C 6 IC = 800A 4 IC = 400A 2 IC = 160A Cies CAPACITANCE, Cies, Coes, Cres, (nF) EMITTER CURRENT, IE, (AMPERES) Tj = 25°C 8 800 COLLECTOR-CURRENT, IC, (AMPERES) 103 10 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 15 Tj = 25oC VGE = 20V COLLECTOR CURRENT, IC, (AMPERES) 800 COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) TRANSFER CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) 102 101 Coes 100 Cres VGE = 0V f = 1MHz 101 0 0 4 8 12 16 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 20 1 2 3 4 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) 5 10-1 10-1 100 101 102 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 3 Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM400DU-34KA Dual IGBTMOD™ KA-Series Module 400 Amperes/1700 Volts REVERSE RECOVERY CHARACTERISTICS (TYPICAL) REVERSE RECOVERY TIME, trr, (ns) SWITCHING TIME, (ns) tf td(off) td(on) 103 102 VCC = 1000V VGE = ±15V RG = 1.0Ω Tj = 125°C INDUCTIVE LOAD 101 100 tr 101 102 VCC = 1000V VGE = ±15V RG = 1.0Ω Tj = 25°C INDUCTIVE LOAD trr 102 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT) 10-3 101 100 10-2 10-1 100 10-1 10-1 10-2 10-2 10-5 TIME, (s) 4 101 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.064°C/W 10-3 10-4 101 103 102 EMITTER CURRENT, IE, (AMPERES) 10-3 10-3 NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) Zth = Rth • (NORMALIZED VALUE) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) Zth = Rth • (NORMALIZED VALUE) COLLECTOR CURRENT, IC, (AMPERES) 102 Irr 101 101 103 GATE CHARGE, VGE 103 100 10-2 10-1 100 101 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.11°C/W 10-1 10-1 10-2 10-2 10-3 10-5 TIME, (s) 10-4 IC= 400A 16 VCC = 800V VCC = 1000V 12 8 4 0 0 500 1000 1500 GATE CHARGE, QG, (nC) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) 10-3 101 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 103 104 REVERSE RECOVERY CURRENT, Irr, (AMPERES) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 10-3 10-3 2000 2500