POWEREX CM50DU-24F

CM50DU-24F
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Trench Gate Design
Dual IGBTMOD™
50 Amperes/1200 Volts
P - NUTS (3 PLACES)
TC MEASURING
POINT
A
D
N
Q (2 PLACES)
E2
E2 G2
CM
E
C2E1
C1
G1 E1
B
F
G
H
F
M
K
K
J
Description:
Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module consists
of two IGBT Transistors in a halfbridge configuration with each transistor having a reverse-connected
super-fast recovery free-wheel
diode. All components and interconnects are isolated from the
heat sinking baseplate, offering
simplified system assembly and
thermal management.
R
C
L
G2
E2
RTC
C2E1
Features:
□ Low Drive Power
□ Low VCE(sat)
□ Discrete Super-Fast Recovery
Free-Wheel Diode
□ Isolated Baseplate for Easy
Heat Sinking
C1
E2
RTC
E1
G1
Outline Drawing and Circuit Diagram
Dimensions
Inches
Dimensions
Inches
A
3.70
94.0
J
0.53
13.5
B
1.89
48.0
K
0.91
23.0
L
1.13
28.7
M
0.67
17.0
N
0.28
7.0
C
Millimeters
1.18 +0.04/-0.02 30.0 +1.0/-0.5
D
3.15±0.01
E
0.43
80.0±0.25
11.0
F
0.16
4.0
P
M5
G
0.71
18.0
Q
0.26 Dia.
H
0.02
0.5
R
0.16
Millimeters
Applications:
□ AC Motor Control
□ UPS
□ Battery Powered Supplies
Ordering Information:
Example: Select the complete
module number you desire from
the table - i.e. CM50DU-24Fis a
1200V (VCES), 50 Ampere Dual
IGBTMOD™ Power Module.
M5
6.5 Dia.
4.0
Type
Current Rating
Amperes
VCES
Volts (x 50)
CM
50
24
1
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM50DU-24F
Trench Gate Design Dual IGBTMOD™
50 Amperes/1200 Volts
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings
Symbol
CM50DU-24F
Units
Junction Temperature
Tj
-40 to 150
°C
Storage Temperature
Tstg
-40 to 125
°C
Collector-Emitter Voltage (G-E SHORT)
VCES
1200
Volts
Gate-Emitter Voltage (C-E SHORT)
VGES
±20
Volts
IC
50
Amperes
ICM
100*
Amperes
IE
50
Amperes
Peak Emitter Current**
IEM
100*
Amperes
Maximum Collector Dissipation (Tc = 25°C, Tj ≤ 150°C)
Pc
320
Watts
Mounting Torque, M5 Main Terminal
–
31
in-lb
Mounting Torque, M6 Mounting
–
40
in-lb
–
310
Grams
Viso
2500
Volts
Collector Current (Tc = 25°C)
Peak Collector Current
Emitter Current** (Tc = 25°C)
Weight
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Units
Collector-Cutoff Current
ICES
VCE = VCES, VGE = 0V
–
–
1
mA
Gate Leakage Voltage
IGES
VGE = VGES, VCE = 0V
–
–
20
µA
Gate-Emitter Threshold Voltage
VGE(th)
IC = 5mA, VCE = 10V
5
6
7
Volts
Collector-Emitter Saturation Voltage
VCE(sat)
IC = 50A, VGE = 15V, Tj = 25°C
–
1.8
2.4
Volts
IC = 50A, VGE = 15V, Tj = 125°C
–
1.9
–
Volts
Total Gate Charge
QG
VCC = 600V, IC = 50A, VGE = 15V
–
550
–
nC
Emitter-Collector Voltage**
VEC
IE = 50A, VGE = 0V
–
–
* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating.
** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
2
Max.
3.2
Volts
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM50DU-24F
Trench Gate Design Dual IGBTMOD™
50 Amperes/1200 Volts
Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Input Capacitance
Cies
Output Capacitance
Coes
Test Conditions
VCE = 10V, VGE = 0V
Min.
Typ.
Max.
–
–
20
–
–
Reverse Transfer Capacitance
Cres
–
–
Inductive
Turn-on Delay Time
td(on)
VCC = 600V, IC = 50A,
–
–
Load
Rise Time
tr
VGE1 = VGE2 = 15V,
–
Switch
Turn-off Delay Time
td(off)
RG = 6.3⍀,
–
Times
Fall Time
0.85
0.5
Units
nf
nf
nf
100
ns
–
50
ns
–
300
ns
tf
Inductive Load
–
–
300
ns
Diode Reverse Recovery Time**
trr
Switching Operation
–
–
150
ns
Diode Reverse Recovery Charge**
Qrr
IE = 50A
–
2.1
–
µC
Typ.
Max.
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Thermal Resistance, Junction to Case
Symbol
Test Conditions
Min.
Rth(j-c)Q
Per IGBT 1/2 Module, Tc Reference
–
Units
0.39
°C/W
0.70
°C/W
Point per Outline Drawing
Thermal Resistance, Junction to Case
Rth(j-c)D
Per FWDi 1/2 Module, Tc Reference
–
–
–
0.26
–
0.035
Point per Outline Drawing
Thermal Resistance, Junction to Case
Rth(j-c)'Q
Per IGBT 1/2 Module,
°C/W
Tc Reference Point Under Chip
Contact Thermal Resistance
Rth(c-f)
Per Module, Thermal Grease Applied
–
°C/W
** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
3
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM50DU-24F
Trench Gate Design Dual IGBTMOD™
50 Amperes/1200 Volts
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
OUTPUT CHARACTERISTICS
(TYPICAL)
VGE = 20V
80
9
60
8.5
40
20
8
0
0
1
2
3
5
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
3
10 9.5
11
15
Tj = 25oC
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
COLLECTOR CURRENT, IC, (AMPERES)
100
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
VGE = 15V
Tj = 25°C
Tj = 125°C
2
1
0
4
Tj = 25°C
4
3
IC = 100A
IC = 50A
2
IC = 20A
1
0
0
20
40
60
80
0
100
16
18 20
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
CAPACITANCE VS. VCE
(TYPICAL)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
103
102
100
0
1.0
2.0
3.0
100
101
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
GATE CHARGE, VGE
Irr
101
101
VCC = 600V
VGE = ±15V
RG = 6.3 Ω
Tj = 25°C
Inductive Load
100
100
101
EMITTER CURRENT, IE, (AMPERES)
100
102
20
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
trr
REVERSE RECOVERY CURRENT, Irr, (AMPERES)
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
102
tr
101
IC = 50A
16
VCC = 400V
VCC = 600V
12
100
100
102
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)
102
tf
td(off)
td(on)
Cres
10-1
10-1
4.0
102
VCC = 600V
VGE = ±15V
RG = 6.3 Ω
Tj = 125°C
Inductive Load
Coes
VGE = 0V
100
SWITCHING TIME, (ns)
101
Cies
101
8
4
101
102
COLLECTOR CURRENT, IC, (AMPERES)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c)
Zth = Rth • (NORMALIZED VALUE)
CAPACITANCE, Cies, Coes, Cres, (nF)
EMITTER CURRENT, IE, (AMPERES)
10 12 14
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
Tj = 25°C
REVERSE RECOVERY TIME, trr, (ns)
8
COLLECTOR-CURRENT, IC, (AMPERES)
102
4
6
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT & FWDi)
101
100
10-3
10-2
10-1
100
10-1
10-1
10-2
10-2
10-3
0
0
200
400
600
GATE CHARGE, QG, (nC)
800
101
Per Unit Base
Rth(j-c) = 0.39°C/W (IGBT)
Rth(j-c) = 0.7°C/W (FWDi)
Single Pulse
TC = 25°C
10-5
10-4
10-3
10-3
TIME, (s)
4