CM50DU-24F Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Trench Gate Design Dual IGBTMOD™ 50 Amperes/1200 Volts P - NUTS (3 PLACES) TC MEASURING POINT A D N Q (2 PLACES) E2 E2 G2 CM E C2E1 C1 G1 E1 B F G H F M K K J Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a halfbridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. R C L G2 E2 RTC C2E1 Features: □ Low Drive Power □ Low VCE(sat) □ Discrete Super-Fast Recovery Free-Wheel Diode □ Isolated Baseplate for Easy Heat Sinking C1 E2 RTC E1 G1 Outline Drawing and Circuit Diagram Dimensions Inches Dimensions Inches A 3.70 94.0 J 0.53 13.5 B 1.89 48.0 K 0.91 23.0 L 1.13 28.7 M 0.67 17.0 N 0.28 7.0 C Millimeters 1.18 +0.04/-0.02 30.0 +1.0/-0.5 D 3.15±0.01 E 0.43 80.0±0.25 11.0 F 0.16 4.0 P M5 G 0.71 18.0 Q 0.26 Dia. H 0.02 0.5 R 0.16 Millimeters Applications: □ AC Motor Control □ UPS □ Battery Powered Supplies Ordering Information: Example: Select the complete module number you desire from the table - i.e. CM50DU-24Fis a 1200V (VCES), 50 Ampere Dual IGBTMOD™ Power Module. M5 6.5 Dia. 4.0 Type Current Rating Amperes VCES Volts (x 50) CM 50 24 1 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM50DU-24F Trench Gate Design Dual IGBTMOD™ 50 Amperes/1200 Volts Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Symbol CM50DU-24F Units Junction Temperature Tj -40 to 150 °C Storage Temperature Tstg -40 to 125 °C Collector-Emitter Voltage (G-E SHORT) VCES 1200 Volts Gate-Emitter Voltage (C-E SHORT) VGES ±20 Volts IC 50 Amperes ICM 100* Amperes IE 50 Amperes Peak Emitter Current** IEM 100* Amperes Maximum Collector Dissipation (Tc = 25°C, Tj ≤ 150°C) Pc 320 Watts Mounting Torque, M5 Main Terminal – 31 in-lb Mounting Torque, M6 Mounting – 40 in-lb – 310 Grams Viso 2500 Volts Collector Current (Tc = 25°C) Peak Collector Current Emitter Current** (Tc = 25°C) Weight Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Static Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Units Collector-Cutoff Current ICES VCE = VCES, VGE = 0V – – 1 mA Gate Leakage Voltage IGES VGE = VGES, VCE = 0V – – 20 µA Gate-Emitter Threshold Voltage VGE(th) IC = 5mA, VCE = 10V 5 6 7 Volts Collector-Emitter Saturation Voltage VCE(sat) IC = 50A, VGE = 15V, Tj = 25°C – 1.8 2.4 Volts IC = 50A, VGE = 15V, Tj = 125°C – 1.9 – Volts Total Gate Charge QG VCC = 600V, IC = 50A, VGE = 15V – 550 – nC Emitter-Collector Voltage** VEC IE = 50A, VGE = 0V – – * Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. ** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). 2 Max. 3.2 Volts Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM50DU-24F Trench Gate Design Dual IGBTMOD™ 50 Amperes/1200 Volts Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Input Capacitance Cies Output Capacitance Coes Test Conditions VCE = 10V, VGE = 0V Min. Typ. Max. – – 20 – – Reverse Transfer Capacitance Cres – – Inductive Turn-on Delay Time td(on) VCC = 600V, IC = 50A, – – Load Rise Time tr VGE1 = VGE2 = 15V, – Switch Turn-off Delay Time td(off) RG = 6.3⍀, – Times Fall Time 0.85 0.5 Units nf nf nf 100 ns – 50 ns – 300 ns tf Inductive Load – – 300 ns Diode Reverse Recovery Time** trr Switching Operation – – 150 ns Diode Reverse Recovery Charge** Qrr IE = 50A – 2.1 – µC Typ. Max. Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Thermal Resistance, Junction to Case Symbol Test Conditions Min. Rth(j-c)Q Per IGBT 1/2 Module, Tc Reference – Units 0.39 °C/W 0.70 °C/W Point per Outline Drawing Thermal Resistance, Junction to Case Rth(j-c)D Per FWDi 1/2 Module, Tc Reference – – – 0.26 – 0.035 Point per Outline Drawing Thermal Resistance, Junction to Case Rth(j-c)'Q Per IGBT 1/2 Module, °C/W Tc Reference Point Under Chip Contact Thermal Resistance Rth(c-f) Per Module, Thermal Grease Applied – °C/W ** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). 3 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM50DU-24F Trench Gate Design Dual IGBTMOD™ 50 Amperes/1200 Volts COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) VGE = 20V 80 9 60 8.5 40 20 8 0 0 1 2 3 5 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 3 10 9.5 11 15 Tj = 25oC COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) COLLECTOR CURRENT, IC, (AMPERES) 100 COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) VGE = 15V Tj = 25°C Tj = 125°C 2 1 0 4 Tj = 25°C 4 3 IC = 100A IC = 50A 2 IC = 20A 1 0 0 20 40 60 80 0 100 16 18 20 FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 103 102 100 0 1.0 2.0 3.0 100 101 REVERSE RECOVERY CHARACTERISTICS (TYPICAL) GATE CHARGE, VGE Irr 101 101 VCC = 600V VGE = ±15V RG = 6.3 Ω Tj = 25°C Inductive Load 100 100 101 EMITTER CURRENT, IE, (AMPERES) 100 102 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) trr REVERSE RECOVERY CURRENT, Irr, (AMPERES) COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 102 tr 101 IC = 50A 16 VCC = 400V VCC = 600V 12 100 100 102 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) 102 tf td(off) td(on) Cres 10-1 10-1 4.0 102 VCC = 600V VGE = ±15V RG = 6.3 Ω Tj = 125°C Inductive Load Coes VGE = 0V 100 SWITCHING TIME, (ns) 101 Cies 101 8 4 101 102 COLLECTOR CURRENT, IC, (AMPERES) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) Zth = Rth • (NORMALIZED VALUE) CAPACITANCE, Cies, Coes, Cres, (nF) EMITTER CURRENT, IE, (AMPERES) 10 12 14 GATE-EMITTER VOLTAGE, VGE, (VOLTS) Tj = 25°C REVERSE RECOVERY TIME, trr, (ns) 8 COLLECTOR-CURRENT, IC, (AMPERES) 102 4 6 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT & FWDi) 101 100 10-3 10-2 10-1 100 10-1 10-1 10-2 10-2 10-3 0 0 200 400 600 GATE CHARGE, QG, (nC) 800 101 Per Unit Base Rth(j-c) = 0.39°C/W (IGBT) Rth(j-c) = 0.7°C/W (FWDi) Single Pulse TC = 25°C 10-5 10-4 10-3 10-3 TIME, (s) 4