CM75DU-24H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Dual IGBTMOD™ U-Series Module 75 Amperes/1200 Volts TC Measured Point A B E F U H G J C2E1 E2 C1 G2 G2 CM D C 2 - Mounting Holes (6.5 Dia.) V G1 E1 K Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a halfbridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. L M 3-M5 Nuts O O P N Q 0.110 - 0.5 Tab P S R T E2 G2 C2E1 E2 Features: □ Low Drive Power □ Low VCE(sat) □ Discrete Super-Fast Recovery Free-Wheel Diode □ Isolated Baseplate for Easy Heat Sinking C1 E1 G1 Outline Drawing and Circuit Diagram Dimensions A Inches 3.7 Millimeters 94.0 B 3.15±0.01 C 1.89 80.0±0.25 48.0 D 0.94 E 0.28 Dimensions Inches M 0.47 Millimeters 12.0 N 0.53 13.5 O 0.1 2.5 24.0 P 0.63 16.0 7.0 Q 0.98 25.0 1.18 +0.04/-0.02 30.0 +1.0/-0.5 Applications: □ AC Motor Control □ Motion/Servo Control □ UPS □ Welding Power Supplies □ Laser Power Supplies Ordering Information: Example: Select the complete module number you desire from the table - i.e. CM75DU-24H is a 1200V (VCES), 75 Ampere Dual IGBTMOD™ Power Module. F 0.67 17.0 R G 0.91 23.0 S 0.3 7.5 H 0.91 23.0 T 0.83 21.2 J 0.43 11.0 U 0.16 4.0 Type Current Rating Amperes VCES Volts (x 50) K 0.71 18.0 V 0.51 13.0 CM 75 24 L 0.16 4.0 45 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM75DU-24H Dual IGBTMOD™ U-Series Module 75 Amperes/1200 Volts Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Junction Temperature Symbol CM75DU-24H Units Tj -40 to 150 °C Tstg -40 to 125 °C Collector-Emitter Voltage (G-E SHORT) VCES 1200 Volts Gate-Emitter Voltage (C-E SHORT) VGES ±20 Volts IC 75 Amperes ICM 150* Amperes IE 75 Amperes Peak Emitter Current** IEM 150* Amperes Maximum Collector Dissipation (Tc = 25°C, Tj ≤ 150°C) Pc 600 Watts Mounting Torque, M5 Main Terminal – 31 in-lb Mounting Torque, M6 Mounting – 40 in-lb – 310 Grams Viso 2500 Volts Storage Temperature Collector Current (Tc = 25°C) Peak Collector Current Emitter Current** (Tc = 25°C) Weight Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) * Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Static Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Collector-Cutoff Current Symbol Test Conditions Min. Typ. Max. ICES VCE = VCES, VGE = 0V – – 1 Units mA IGES VGE = VGES, VCE = 0V – – 0.5 µA Gate-Emitter Threshold Voltage VGE(th) IC = 7.5mA, VCE = 10V 4.5 6 7.5 Volts Collector-Emitter Saturation Voltage VCE(sat) IC = 75A, VGE = 15V, Tj = 25°C – 2.9 3.7 Volts IC = 75A, VGE = 15V, Tj = 125°C – 2.85 – Volts Total Gate Charge QG VCC = 600V, IC = 75A, VGE = 15V – 280 – nC Emitter-Collector Voltage* VEC IE = 75A, VGE = 0V – – Min. Typ. – – – – 3.7 nf – – 2.2 nf Gate Leakage Voltage 3.2 Volts **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Dynamic Electrical Characteristics,Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Max. Cies Output Capacitance Coes Reverse Transfer Capacitance Cres Resistive Turn-on Delay Time td(on) VCC = 600V, IC = 75A, – – 100 ns Load Rise Time tr VGE1 = VGE2 = 15V, – – 200 ns Switch Turn-off Delay Time Times Fall Time VCE = 10V, VGE = 0V 11 Units Input Capacitance nf td(off) RG = 4.2V, Resistive – – 250 ns tf Load Switching Operation – – 350 ns Diode Reverse Recovery Time** trr IE = 75A, diE/dt = -150A/µs – – 300 ns Diode Reverse Recovery Charge** Qrr IE = 75A, diE/dt = -150A/µs – 0.41 – µC **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Test Conditions Min. Typ. Max. Units Thermal Resistance, Junction to Case Rth(j-c)Q Per IGBT 1/2 Module – – 0.21 °C/W Thermal Resistance, Junction to Case Rth(j-c)D Per FWDi 1/2 Module – – 0.47 °C/W Rth(c-f) Per Module, Thermal Grease Applied – 0.035 – °C/W Contact Thermal Resistance 46 Symbol Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM75DU-24H Dual IGBTMOD™ U-Series Module 75 Amperes/1200 Volts 150 15 12 125 VGE = 20V 11 100 75 10 50 9 25 8 0 2 4 6 8 100 75 50 25 VGE = 15V Tj = 25°C Tj = 125°C 4 3 2 1 0 0 10 4 8 12 16 0 20 25 50 75 100 125 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-CURRENT, IC, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) 103 10 102 IC = 75A 4 2 IC = 30A 4 8 12 16 20 101 1.5 2.0 2.5 3.0 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 103 tf VCC = 600V VGE = ±15V RG = 4.2 Ω Tj = 125°C REVERSE RECOVERY TIME, trr, (ns) td(off) 102 td(on) 101 tr 101 102 COLLECTOR CURRENT, IC, (AMPERES) 103 101 Irr 101 100 101 102 EMITTER CURRENT, IE, (AMPERES) Coes 100 Cres 100 101 102 GATE CHARGE, VGE di/dt = -150A/µsec Tj = 25°C trr Cies COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 102 102 101 10-1 10-1 3.5 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 103 100 100 102 100 1.0 0 0 CAPACITANCE, Cies, Coes, Cres, (nF) 6 100 103 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) IC = 150A REVERSE RECOVERY CURRENT, Irr, (AMPERES) 8 150 VGE = 0V f = 1MHz Tj = 25°C Tj = 25°C EMITTER CURRENT, IE, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 125 0 0 SWITCHING TIME, (ns) 5 VCE = 10V Tj = 25°C Tj = 125°C COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) Tj = 25oC COLLECTOR CURRENT, IC, (AMPERES) COLLECTOR CURRENT, IC, (AMPERES) 150 COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) TRANSFER CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) IC = 75A VCC = 400V 15 VCC = 600V 10 5 0 0 100 200 300 400 GATE CHARGE, QG, (nC) 47 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT) 10-3 101 100 10-2 10-1 100 10-1 10-1 10-2 10-2 10-3 10-5 TIME, (s) 48 101 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.21°C/W 10-4 10-3 10-3 NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) Zth = Rth • (NORMALIZED VALUE) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) Zth = Rth • (NORMALIZED VALUE) CM75DU-24H Dual IGBTMOD™ U-Series Module 75 Amperes/1200 Volts TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) 10-3 101 100 10-2 10-1 100 101 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.47°C/W 10-1 10-1 10-2 10-2 10-3 10-5 TIME, (s) 10-4 10-3 10-3