CM300DU-12H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Dual IGBTMOD™ U-Series Module 300 Amperes/600 Volts A D F T - (4 TYP.) H G2 B E E2 C L J E1 CM G1 C2E1 S - NUTS (3 TYP) E2 Q K Q K H U C1 P G N K Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a halfbridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. R M C L G2 E2 Features: □ Low Drive Power □ Low VCE(sat) □ Discrete Super-Fast Recovery Free-Wheel Diode □ Isolated Baseplate for Easy Heat Sinking C2E1 E2 C1 E1 G1 Outline Drawing and Circuit Diagram Dimensions Inches Millimeters A 4.25 B 2.44 C Dimensions Inches 108.0 L 0.87 22.0 62.0 M 0.33 8.5 1.14 +0.04/-0.02 29.0 +1.0/-0.5 Millimeters N 0.10 2.5 D 3.66±0.01 93.0±0.25 P 0.85 21.5 E 1.88±0.01 48.0±0.25 Q 0.98 25.0 F 0.67 17.0 R 0.11 2.8 G 0.16 4.0 S H 0.24 6.0 T 0.26 Dia. 6.5 Dia. J 0.59 15.0 U 0.002 0.05 K 0.55 14.0 M6 M6 Applications: □ AC Motor Control □ Motion/Servo Control □ UPS □ Welding Power Supplies □ Laser Power Supplies Ordering Information: Example: Select the complete module number you desire from the table - i.e. CM300DU-12H is a 600V (VCES), 300 Ampere Dual IGBTMOD™ Power Module. Type Current Rating Amperes VCES Volts (x 50) CM 300 12 33 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM300DU-12H Dual IGBTMOD™ U-Series Module 300 Amperes/600 Volts Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Junction Temperature Symbol CM300DU-12H Units Tj -40 to 150 °C Tstg -40 to 125 °C Collector-Emitter Voltage (G-E SHORT) VCES 600 Volts Gate-Emitter Voltage (C-E SHORT) VGES ±20 Volts IC 300 Amperes ICM 600* Amperes IE 300 Amperes Peak Emitter Current** IEM 600* Amperes Maximum Collector Dissipation (Tc = 25°C) Pc 890 Watts Mounting Torque, M6 Main Terminal – 40 in-lb Mounting Torque, M6 Mounting – 40 in-lb – 400 Grams Viso 2500 Volts Storage Temperature Collector Current (Tc = 25°C) Peak Collector Current (Tj ≤ 150°C) Emitter Current** (Tc = 25°C) Weight Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) * Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Static Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Collector-Cutoff Current ICES VCE = VCES, VGE = 0V – – 1 mA Gate Leakage Voltage IGES VGE = VGES, VCE = 0V – – 0.5 µA 4.5 6 7.5 Volts – 2.4 3.0 Volts – Volts – nC Gate-Emitter Threshold Voltage VGE(th) IC = 30mA, VCE = 10V Collector-Emitter Saturation Voltage VCE(sat) IC = 300A, VGE = 15V, Tj = 25°C IC = 300A, VGE = 15V, Tj = 125°C – Total Gate Charge QG VCC = 300V, IC = 300A, VGE = 15V – 600 Emitter-Collector Voltage* VEC IE = 300A, VGE = 0V – – 2.6 Max. 2.6 Units Volts * Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Input Capacitance Cies Output Capacitance Coes Reverse Transfer Capacitance Cres Resistive Turn-on Delay Time td(on) Load Rise Time tr Switch Turn-off Delay Time Times Fall Time Test Conditions Min. Typ. Max. Units – – 26.4 nf – – 14.4 nf – – 4 nf VCC = 300V, IC = 300A, – – 250 ns VGE1 = VGE2 = 15V, – – 600 ns VCE = 10V, VGE = 0V td(off) RG = 2.1V, Resistive – – 350 ns tf Load Switching Operation – – 300 ns Diode Reverse Recovery Time trr IE = 300A, diE/dt = -600A/µs – – 160 ns Diode Reverse Recovery Charge Qrr IE = 300A, diE/dt = -600A/µs – 0.72 – µC Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Thermal Resistance, Junction to Case Rth(j-c)Q Per IGBT 1/2 Module – – 0.14 °C/W Thermal Resistance, Junction to Case Rth(j-c)D Per FWDi 1/2 Module – – 0.24 °C/W Rth(c-f) Per Module, Thermal Grease Applied – 0.020 – °C/W Contact Thermal Resistance 34 Max. Units Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM300DU-12H Dual IGBTMOD™ U-Series Module 300 Amperes/600 Volts OUTPUT CHARACTERISTICS (TYPICAL) 600 VGE= 20V 14 15 13 12 360 11 240 10 120 9 5 VCE = 10V Tj = 25°C Tj = 125°C 480 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) Tj = 25oC COLLECTOR CURRENT, IC, (AMPERES) 360 240 120 8 0 0 0 2 4 6 8 3 2 1 4 8 12 16 20 0 120 240 360 480 GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-CURRENT, IC, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) 103 102 IC = 600A 6 IC = 300A 4 2 CAPACITANCE, Cies, Coes, Cres, (nF) 8 102 101 Cies Coes 100 Cres IC = 120A 0 4 8 12 16 20 1.4 1.8 2.2 2.6 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 103 REVERSE RECOVERY TIME, trr, (ns) tf td(off) td(on) 102 tr VCC = 300V VGE = ±15V RG = 2.1 Ω Tj = 125°C 102 COLLECTOR CURRENT, IC, (AMPERES) 103 Irr 101 trr 102 EMITTER CURRENT, IE, (AMPERES) 101 102 GATE CHARGE, VGE -di/dt = 600A/µsec Tj = 25°C 101 101 100 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 102 102 10-1 10-1 3.0 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 103 101 101 1.0 100 103 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 101 0.6 0 600 VGE = 0V f = 1MHz Tj = 25°C Tj = 25°C EMITTER CURRENT, IE, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 4 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 10 SWITCHING TIME, (ns) VGE = 15V Tj = 25°C Tj = 125°C 0 0 10 REVERSE RECOVERY CURRENT, Irr, (AMPERES) COLLECTOR CURRENT, IC, (AMPERES) 600 480 COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) TRANSFER CHARACTERISTICS (TYPICAL) IC = 300A 16 VCC = 200V 12 VCC = 300V 8 4 0 0 200 400 600 800 GATE CHARGE, QG, (nC) 35 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT) 10-3 101 100 10-2 10-1 100 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.14°C/W 10-1 10-1 10-2 10-2 10-3 10-5 TIME, (s) 36 101 10-4 10-3 10-3 NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) Zth = Rth • (NORMALIZED VALUE) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) Zth = Rth • (NORMALIZED VALUE) CM300DU-12H Dual IGBTMOD™ U-Series Module 300 Amperes/600 Volts TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) 10-3 101 100 10-2 10-1 100 101 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.24°C/W 10-1 10-1 10-2 10-2 10-3 10-5 TIME, (s) 10-4 10-3 10-3