CM50TF-24H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Six-IGBT IGBTMOD™ H-Series Module 50 Amperes/1200 Volts X A C Q X Q X B uP E uP B vP E vP B wP E wP B uN E uN B vN E vN B wN E wN S N Z - M4 THD (7 TYP.) P P P D G G N U V R E W N T U K N W M AA M J Y DIA. (4 TYP.) AA L L B .110 TAB V F H AB P BuP P BvP EuP BwP EvP BuN EwP BvN EuN u N BwN EvN EwN v w N Outline Drawing and Circuit Diagram Dimensions Inches Millimeters A 4.02±0.02 B 3.58±0.02 C D E 1.69 F Dimensions Inches Millimeters 102.0±0.5 P 0.65 16.5 91.0±0.5 Q 0.55 14.0 3.15±0.01 80.0±0.25 R 0.47 12.0 2.913±0.01 74.0±0.25 S 0.43 11.0 43.0 T 0.39 10.0 U 0.33 8.5 1.18 +0.06/-0.02 30 +1.5/-0.5 G 1.18 30.0 V 0.32 8.1 H 1.16 29.5 W 0.24 Rad. Rad. 6.0 J 1.06 27.0 X 0.24 6.0 K 0.96 24.5 Y 0.22 Dia. Dia. 5.5 L 0.87 22.0 Z M4 Metric M4 M 0.79 20.0 AA 0.08 2.0 N 0.67 17.0 AB 0.28 7.0 Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of six IGBT Transistors in a three phase bridge configuration, with each transistor having a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: □ Low Drive Power □ Low VCE(sat) □ Discrete Super-Fast Recovery (135ns) Free-Wheel Diode □ High Frequency Operation (20-25kHz) □ Isolated Baseplate for Easy Heat Sinking Applications: □ AC Motor Control □ Motion/Servo Control □ UPS □ Welding Power Supplies □ Laser Power Supplies Ordering Information: Example: Select the complete part module number you desire from the table below -i.e. CM50TF-24H is a 1200V (VCES), 50 Ampere Six-IGBT IGBTMOD™ Power Module. Type Current Rating Amperes VCES Volts (x 50) CM 50 24 335 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM50TF-24H Six-IGBT IGBTMOD™ H-Series Module 50 Amperes/1200 Volts Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Symbol CM50TF-24H Units Junction Temperature Tj –40 to 150 °C Storage Temperature Tstg –40 to 125 °C Collector-Emitter Voltage (G-E SHORT) VCES 1200 Volts Gate-Emitter Voltage VGES ±20 Volts IC 50 Amperes ICM 100* Amperes Collector Current Peak Collector Current Diode Forward Current IF 50 Amperes Diode Forward Surge Current IFM 100* Amperes Power Dissipation Pd 400 Watts – 13 in-lb Max. Mounting Torque M4 Mounting Screws Max. Mounting Torque M5 Mounting Screws – 17 in-lb Module Weight (Typical) – 540 Grams VRMS 2500 Volts V Isolation * Pulse width and repetition rate should be such that device junction temperature does not exceed the device rating. Static Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Cutoff Current ICES VCE = VCES, VGE = 0V – – 1.0 mA Gate Leakage Current IGES VGE = VGES, VCE = 0V – – 0.5 mA Gate-Emitter Threshold Voltage VGE(th) IC = 5mA, VCE = 10V 4.5 6.0 7.5 Volts Collector-Emitter Saturation Voltage VCE(sat) IC = 50A, VGE = 15V – 2.5 3.4** Volts IC = 50A, VGE = 15V, Tj = 150°C – 2.25 – Volts Total Gate Charge QG VCC = 600V, IC = 50A, VGS = 15V – 250 – nC Diode Forward Voltage VFM IE = 50A, VGS = 0V – – 3.4 Volts Min. Typ. Max. Units – – 10 nF ** Pulse width and repetition rate should be such that device junction temperature rise is negligible. Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Input Capacitance Cies Output Capacitance Coes Reverse Transfer Capacitance Cres Resistive Turn-on Delay Time td(on) Load Rise Time Switching Turn-off Delay Time Times Fall Time Test Conditions VGE = 0V, VCE = 10V, f = 1MHz – – 3.5 nF – – 2 nF – – 80 ns tr VCC = 600V, IC = 50A, – – 200 ns td(off) VGE1 = VGE2 = 15V, RG = 6.3Ω – – 150 ns – – 350 ns tf Diode Reverse Recovery Time trr IE = 50A, diE/dt = –100A/µs – – 250 ns Diode Reverse Recovery Charge Qrr IE = 50A, diE/dt = –100A/µs – 0.37 – µC Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified 336 Characteristics Symbol Test Conditions Min. Typ. Max. Units Thermal Resistance, Junction to Case Rth(j-c) Per IGBT – – 0.31 °C/W Thermal Resistance, Junction to Case Rth(j-c) Per FWDi – – 0.70 °C/W Contact Thermal Resistance Rth(c-f) Per Module, Thermal Grease Applied – – 0.033 °C/W Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM50TF-24H Six-IGBT IGBTMOD™ H-Series Module 50 Amperes/1200 Volts 100 15 80 5 12 COLLECTOR CURRENT, IC, (AMPERES) VGE = 20V 11 60 10 40 9 20 7 VCE = 10V Tj = 25°C Tj = 125°C 80 60 40 20 8 0 0 0 2 4 6 8 0 10 4 8 12 16 4 3 2 1 0 20 0 20 40 60 80 GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-CURRENT, IC, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) 102 10 IC = 100A 6 IC = 50A 4 2 CAPACITANCE, Cies, Coes, Cres, (nF) EMITTER CURRENT, IE, (AMPERES) Tj = 25°C 8 101 101 Cies Coes 100 IC = 20A VGE = 0V f = 1MHz 100 4 8 12 16 0 20 0.8 1.6 2.4 3.2 4.0 GATE-EMITTER VOLTAGE, VGE, (VOLTS) EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 103 103 REVERSE RECOVERY TIME, t rr, (ns) 102 td(on) VCC = 600V VGE = ±15V RG = 6.3Ω Tj = 125°C tr 101 100 101 COLLECTOR CURRENT, IC, (AMPERES) 102 Irr 102 100 di/dt = -100A/µsec Tj = 25°C 101 100 101 EMITTER CURRENT, IE, (AMPERES) 101 102 GATE CHARGE, VGE 101 t rr 100 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) tf td(off) Cres 10-1 10-1 10-1 102 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 0 100 102 Tj = 25°C 0 SWITCHING TIME, (ns) VGE = 15V Tj = 25°C Tj = 125°C COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) REVERSE RECOVERY CURRENT, Irr, (AMPERES) COLLECTOR CURRENT, IC, (AMPERES) Tj = 25oC COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 100 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) TRANSFER CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) IC = 50A 16 VCC = 400V VCC = 600V 12 8 4 0 0 100 200 300 400 GATE CHARGE, QG, (nC) 337 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 10-3 101 100 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT) 10-2 10-1 100 10-1 10-1 10-2 10-2 10-3 10-5 TIME, (s) 338 101 Single Pulse TC = 25°C Per Unit Base = R th(j-c) = 0.31°C/W 10-4 10-3 10-3 NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) Zth = Rth • (NORMALIZED VALUE) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) Zth = Rth • (NORMALIZED VALUE) CM50TF-24H Six-IGBT IGBTMOD™ H-Series Module 50 Amperes/1200 Volts 10-3 101 100 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) 10-2 10-1 100 101 Single Pulse TC = 25°C Per Unit Base = R th(j-c) = 0.7°C/W 10-1 10-1 10-2 10-2 10-3 10-5 TIME, (s) 10-4 10-3 10-3