CM900HB-90H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Single IGBTMOD™ HVIGBT 900 Amperes/4500 Volts A D L L L S V NUTS (6 TYP) P C C C E E E F E CM B Q C E G R U NUTS (3 TYP) T H W (8 TYP) J K N N X C C C E E E C Features: □ Low Drive Power □ Low VCE(sat) □ Super-Fast Recovery Free-Wheel Diode □ Isolated Baseplate for Easy Heat Sinking C G E Outline Drawing and Circuit Diagram Dimensions Inches A 7.48 B 5.51 C Millimeters Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of one IGBT Transistor with a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Dimensions Inches Millimeters 190.0 M 0.51 13.0 140.0 N 2.42 61.5 1.50 38.0 P 0.59 15.0 D 6.73 171.0 Q 1.57 40.0 E 4.88±0.01 124.0±0.25 R 0.20 5.2 F 1.57 40.0 S 1.16 29.5 G 0.79 20.0 T 1.10 28.0 H 0.80 20.25 U M4 Metric M4 J 1.62 41.25 V M8 Metric M8 K 3.13 79.4 W 0.28 Dia. Dia. 7.0 L 2.24±0.01 57.0±0.25 X 0.20 5.0 Applications: □ Traction □ Medium Voltage Drives □ High Voltage Power Supplies Ordering Information: Example: Select the complete part module number you desire from the table below -i.e. CM900HB-90H is a 4500V (VCES), 900 Ampere Single IGBTMOD™ Power Module. Type Current Rating Amperes VCES Volts (x 50) CM 900 90 1 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM900HB-90H Single IGBTMOD™ HVIGBT 900 Amperes/4500 Volts Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Symbol CM900HB-90H Units Junction Temperature Tj -40 to 150 °C Storage Temperature Tstg -40 to 125 °C Collector-Emitter Voltage (VGE = 0V) VCES 4500 Volts Gate-Emitter Voltage (VCE = 0V) VGES ±20 Volts Collector Current (Tc = 25°C) IC 900 Amperes Peak Collector Current (Pulse) ICM 1800* Amperes Diode Forward Current** (Tc = 25°C) IE 900 Amperes Diode Forward Surge Current** (Pulse) IEM 1800* Amperes Maximum Collector Dissipation (Tc = 25°C, IGBT Part, Tj ≤ 125°C) PC 10000 Watts Max. Mounting Torque M8 Terminal Screws – 115 in-lb Max. Mounting Torque M6 Mounting Screws – 53 in-lb Max. Mounting Torque M4 Auxiliary Terminal Screws – 17 in-lb Module Weight (Typical) V Isolation (Charged Part to Baseplate, AC 60Hz 1 min.) – 2.2 kg Viso 6000 Volts * Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Static Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Collector-Cutoff Current Symbol Test Conditions Min. Typ. Max. Units ICES VCE = VCES, VGE = 0V – – 18.0 mA IGES VGE = VGES, VCE = 0V – – 0.5 µA Gate-Emitter Threshold Voltage VGE(th) IC = 90mA, VCE = 10V 4.5 6.0 7.5 Volts Collector-Emitter Saturation Voltage VCE(sat) Gate Leakage Current IC = 900A, VGE = 15V, Tj = 25°C – 3.0 3.9* Volts IC = 900A, VGE = 15V, Tj = 125°C – 3.3 – Volts Total Gate Charge QG VCC = 2250V, IC = 900A, VGE = 15V – 7.5 – µC Emitter-Collector Voltage** VEC IE = 900A, VGE = 0V – 4.0 5.2 Volts * Pulse width and repetition rate should be such that device junction temperature rise is negligible. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). 2 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM900HB-90H Single IGBTMOD™ HVIGBT 900 Amperes/4500 Volts Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Min. Typ. – 162 – nF – 12.0 – nF – 3.6 – nF VCC = 2250V, IC = 900A, – – 2.4 µs VGE1 = VGE2 = 15V, – – 2.4 µs td(off) RG = 10Ω – – 6.0 µs tf Resistive Load Switching Operation – – 1.2 µs Diode Reverse Recovery Time** trr IE = 900A, diE/dt = -1800A/µs – – Diode Reverse Recovery Charge** Qrr IE = 900A, diE/dt = -1800A/µs – 360* Input Capacitance Cies Output Capacitance Coes Reverse Transfer Capacitance Cres Resistive Turn-on Delay Time td(on) Load Rise Time tr Switching Turn-off Delay Time Times Fall Time Test Conditions VGE = 0V, VCE = 10V Max. 1.8 – Units µs µC * Pulse width and repetition rate should be such that device junction temperature rise is negligible. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Thermal Resistance, Junction to Case Rth(j-c) Q Per IGBT – – 0.010 K/W Thermal Resistance, Junction to Case Rth(j-c) D Per FWDi – – 0.020 K/W Rth(c-f) Per Module, Thermal Grease Applied – 0.007 – K/W Contact Thermal Resistance, Case to Fin 3 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM900HB-90H Single IGBTMOD™ HVIGBT 900 Amperes/4500 Volts 5 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) 4 3 2 1 Tj = 25°C Tj = 125°C 5 4 3 2 1 0 0 500 1000 1500 0 2000 COLLECTOR CURRENT, IC, (AMPERES) 1000 1500 0.8 0.6 0.4 0.2 2000 1.0 0.8 0.6 0.4 0.2 0 10-3 10-2 10-1 10-1 5 VCC = 2250V VGE = ±15V RG = 10Ω LS = 180nH Tj = 125°C Inductive Load Integrated Over Range Of 10% 6 5 4 3 2 1 0 400 800 1200 3 2 1 0 1600 VCC = 2250V VGE = ±15V RG = 10Ω LS = 180nH Tj = 125°C Inductive Load Integrated Over Range of 10% 4 0 400 800 1200 COLLECTOR CURRENT, IC, (AMPERES) COLLECTOR CURRENT, IC, (AMPERES) FREE-WHEEL DIODE REVERSE RECOVERY CHARACTERISTICS (TYPICAL) TURN-ON SWITCHING SAFE OPERATING AREA (RBSOA) (TYPICAL) DIODE REVERSE RECOVERY SAFE OPERATING AREA (TYPICAL) 0.8 0.6 VCC = 2250V VGE = ±15V RG = 10Ω LS = 180nH Tj = 125°C Inductive Load Integrated Over Range of 10% IGBT Drive Conditions 0.4 0.2 COLLECTOR CURRENT, IC, (AMPERES) 2500 1.0 400 800 1200 EMITTER CURRENT, IE, (AMPERES) 1600 1600 2000 2000 1500 1000 VCC = 3000V VGE = ±15V RG = 10Ω LS = 100nH Tj = 125°C 500 0 0 100 HALF-BRIDGE TURN-OFF SWITCHING ENERGY CHARACTERISTICS (TYPICAL) TIME, (s) 1.2 0 10-2 HALF-BRIDGE TURN-ON SWITCHING ENERGY CHARACTERISTICS (TYPICAL) 0 100 0 10-3 TIME, (s) TURN-OFF SWITCHING ENERGY, Eoff, (J/P) Single Pulse TC = 25°C Per Unit Base = R th(j-c) = 0.020 K/W Single Pulse TC = 25°C Per Unit Base = R th(j-c) = 0.010 K/W 1.0 7 1.2 TURN-ON SWITCHING ENERGY, Eon, (J/P) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) Zth = Rth • (NORMALIZED VALUE) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) 500 1.2 EMITTER CURRENT, IE, (AMPERES) REVERSE RECOVERY CURRENT, Irr, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) VGE =T15V j = 25°C Tj = 125°C 0 REVERSE RECOVERY ENERGY, Erec, (J/P) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) Zth = Rth • (NORMALIZED VALUE) 6 6 4 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 1500 1000 500 0 0 1000 2000 3000 4000 5000 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 0 1000 2000 3000 4000 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)