CM350DU-5F Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Trench Gate Design Dual IGBTMOD™ 350 Amperes/250 Volts A B TC Measured Point K 4 - Mounting Holes E H D J C F CM H R 3 - M6 NUTS R Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. G 0.110 - 0.5 Tab M P M P N M L Q Features: □ Low Drive Power □ Low VCE(sat) □ Discrete Super-Fast Recovery Free-Wheel Diode □ High Frequency Operation (15-20kHz) □ Isolated Baseplate for Easy Heat Sinking G2 E2 E2 C2E1 C1 E1 G1 Outline Drawing and Circuit Diagram Dimensions Inches Millimeters A 4.33 B 3.66±0.01 C 3.15 D 2.44±0.01 E 0.55 Dimensions Inches 110.0 J 0.59 93.0±0.25 K 0.26 Dia. L 1.14 +0.04/-0.02 M 0.71 18.0 N 0.33 8.5 80.0 62.0±0.25 14.0 Millimeters 15.0 6.5 Dia. 29 +1.0/-0.5 F 0.86 21.75 P 0.28 7.0 G 0.94 24.0 Q 0.83 21.0 H 0.24 6.0 R 0.98 25.0 Applications: □ DC Motor Control □ Boost Regulator Ordering Information: Example: Select the complete module number you desire from the table - i.e. CM350DU-5F is a 250V (VCES), 350 Ampere Trench Gate Design Dual IGBTMOD™ Power Module. Type Current Rating Amperes VCES Volts (x 50) CM 350 5 361 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM350DU-5F Trench Gate Design Dual IGBTMOD™ 350 Amperes/250 Volts Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Junction Temperature Symbol CM350DU-5F Units Tj -40 to 150 °C Tstg -40 to 125 °C Collector-Emitter Voltage (G-E SHORT) VCES 250 Volts Gate-Emitter Voltage (C-E SHORT) VGES ±20 Volts IC 350 Amperes ICM 700 Amperes IE 350 Amperes Peak Emitter Current** IEM 700* Amperes Maximum Collector Dissipation (Tc = 25°C) Pc 960 Watts Mounting Torque, M6 Main Terminal – 26 in-lb Mounting Torque, M6 Mounting – 26 in-lb – 520 Grams Viso 2500 Volts Storage Temperature Collector Current (Tc = 25°C) Peak Collector Current (Tj ≤ 150°C) Emitter Current** (Tc = 25°C) Weight Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) * Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Static Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Collector-Cutoff Current Min. Typ. Max. ICES VCE = VCES, VGE = 0V Test Conditions – – 1 Units mA I GES VGE = VCES, VCE = 0V – – 0.5 µA Gate-Emitter Threshold Voltage VGE(th) IC = 35mA, VCE = 10V 3.0 4.0 5.0 Volts Collector-Emitter Saturation Voltage VCE(sat) Gate Leakage Current IC = 350A, VGE = 10V, Tj = 25°C – 1.2 1.7 Volts IC = 350A, VGE = 10V, Tj = 125°C – 1.10 – Volts Total Gate Charge QG VCC = 100V, IC = 350A, VGE = 10V – 1320 Emitter-Collector Voltage* VEC IE = 350A, VGE = 0V – – – 2.0 nC Volts * Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Input Capacitance Cies Output Capacitance Coes Reverse Transfer Capacitance Cres Resistive Turn-on Delay Time td(on) Load Rise Time tr Switch Turn-off Delay Time Times Fall Time Test Conditions VCE = 10V, VGE = 0V Min. Typ. – – Max. 99 Units nf – – 4.5 nf – – 3.4 nf VCC = 100V, IC = 350A, – – 1100 ns VGE1 = VGE2 = 10V, – – 2400 ns td(off) RG = 7.1Ω, Resistive – – 900 ns tf Load Switching Operation – – 500 ns Diode Reverse Recovery Time trr IE = 350A, diE/dt = -700A/ms – – 300 ns Diode Reverse Recovery Charge Qrr IE = 350A, diE/dt = -700A/ms – 5.7 – µC Max. Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified 362 Characteristics Symbol Test Conditions Min. Typ. Thermal Resistance, Junction to Case Rth(j-c) Per IGBT – – 0.13 Units °C/W Thermal Resistance, Junction to Case Rth(j-c) Per Free-Wheel Diode – – 0.19 °C/W Contact Thermal Resistance Rth(c-f) Per Module, Thermal Grease Applied – 0.010 – °C/W Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM350DU-5F Trench Gate Design Dual IGBTMOD™ 350 Amperes/250 Volts OUTPUT CHARACTERISTICS (TYPICAL) 700 6 8 560 5.5 420 5.25 280 5.0 140 4.75 4.5 0 0 1 2 3 560 420 1.2 0.8 280 140 0.4 0 0 5 2 4 6 8 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 0 10 IC = 350A IC = 140A 9 12 0.9 1.2 1.5 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 103 REVERSE RECOVERY TIME, trr, (ns) td(off) td(on) tr VCC = 100V VGE = ±10V RG = 7.1 Ω Tj = 125°C 102 COLLECTOR CURRENT, IC, (AMPERES) 101 Coes Cres 100 103 trr 102 Irr 102 EMITTER CURRENT, IE, (AMPERES) 101 102 GATE CHARGE, VGE di/dt = -700A/µsec Tj = 25°C 101 101 100 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 103 102 10-1 10-1 1.8 GATE-EMITTER VOLTAGE, VGE, (VOLTS) tf 101 101 101 100 0.6 15 104 102 102 VGE = 0V f = 1MHz 0 6 700 Cies 101 103 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 1 560 102 REVERSE RECOVERY CURRENT, Irr, (AMPERES) 2 103 420 CAPACITANCE VS. VCE (TYPICAL) CAPACITANCE, Cies, Coes, Cres, (nF) EMITTER CURRENT, IE, (AMPERES) 3 3 280 Tj = 25°C IC = 700A 0 140 COLLECTOR-CURRENT, IC, (AMPERES) 103 Tj = 25°C 4 VGE = 10V Tj = 25°C Tj = 125°C 1.6 0 4 5 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 2.0 VCE = 10V Tj = 25°C Tj = 125°C COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) Tj = 25oC 5.75 VGE = 15V 10 COLLECTOR CURRENT, IC, (AMPERES) COLLECTOR CURRENT, IC, (AMPERES) 700 SWITCHING TIME, (ns) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) TRANSFER CHARACTERISTICS (TYPICAL) IC = 350A 16 VCC = 50V 12 VCC = 100V 8 4 0 0 0.7 1.4 2.1 2.8 GATE CHARGE, QG, (nC) 363 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT) 10-3 101 100 10-2 10-1 100 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.13°C/W 10-1 10-1 10-2 10-2 10-3 10-5 TIME, (s) 364 101 10-4 10-3 10-3 NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) Zth = Rth • (NORMALIZED VALUE) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) Zth = Rth • (NORMALIZED VALUE) CM350DU-5F Trench Gate Design Dual IGBTMOD™ 350 Amperes/250 Volts TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) 10-3 101 100 10-2 10-1 100 101 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.19°C/W 10-1 10-1 10-2 10-2 10-3 10-5 TIME, (s) 10-4 10-3 10-3