QID4515001 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com Dual IGBTMOD™ HVIGBT Module 150 Amperes/4500 Volts S NUTS (3TYP) A D F J (2TYP) C N 7 8 F H 1 2 M 5 6 B E 3 4 H V (4TYP) G (3TYP) R (DEEP) K (3TYP) T (SCREWING DEPTH) L (2TYP) Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. U (5TYP) P Q 1 4 5 6 2 8 3 7 Outline Drawing and Circuit Diagram DimensionsInches Millimeters DimensionsInches Millimeters A 5.51 140.0 L B 2.87 73.0 M 0.38 9.75 C 1.89 48.0 N 0.20 5.0 0.69±0.01 17.5±0.25 D 4.88±0.01124.0±0.25 P 0.22 5.5 E 2.24±0.01 57.0±0.25 Q 1.44 36.5 0.16 4.0 F 1.18 30.0 R 0.43 11.0 H 1.07 27.15 J 0.20 5.0 K 1.65 42.0 V G 09/12 Rev. 8 S M6 Metric M6 T 0.63 Min. 16.0 Min. U 0.11 x 0.02 2.8 x 0.5 0.28 Dia. 7.0 Dia. Features: Low VCE(sat) Creepage and Clearance meet IEC 60077-1 High Isolation Voltage Rugged SWSOA and RRSOA Compact Industry Standard Package Applications: Traction Medium Voltage Drives High Voltage Power Supplies 1 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com QID4515001 Dual IGBTMOD™ HVIGBT Module 150 Amperes/4500 Volts Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings SymbolQID4515001Units Junction Temperature Storage Temperature Tj -40 to 150 °C Tstg -40 to 125 °C Collector-Emitter Voltage (VGE = 0V) VCES 4500Volts Gate-Emitter Voltage (VCE = 0V) VGES ±20Volts Collector Current, DC (TC = 91°C) IC 150Amperes ICM 300*Amperes IF 150Amperes Diode Forward Surge Current** (Pulse) IFM 300*Amperes I2t for Diode (t = 10ms) I2t Maximum Collector Dissipation (TC = 25°C, IGBT Part, Tj(max) ≤ 150°C) PC Mounting Torque, M6 Terminal Screws — Mounting Torque, M6 Mounting Screws — 44 in-lb Module Weight (Typical) — 900 Grams Peak Collector Current (Pulse) Diode Forward Current** 10kA2sec 1440Watts 44 in-lb Isolation Voltage (Charged Part to Baseplate, AC 60Hz 1 min.) Viso 9.0kVolts Partial Discharge Qpd 10pC (V1 = 4800 VRMS, V2 = 3500 VRMS, f = 60Hz (Acc. to IEC 1287)) Maximum Short-Circuit Pulse Width, tpsc 10µs (VCC ≤ 3200V, VGE = ±15V, RG(off) ≥ 60Ω, Tj = 125°C) Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Collector-Cutoff Current Gate Leakage Current Symbol Test Conditions ICESVCE = VCES, VGE = 0V Min. Typ. Max. Units — — 2.7 mA IGESVGE = VGES, VCE = 0V — — 0.5 µA Gate-Emitter Threshold Voltage VGE(th)IC = 10mA, VCE = 10V 4.5 6.0 7.5 Volts Collector-Emitter Saturation Voltage VCE(sat)IC = 150A, VGE = 15V, Tj = 25°C — 3.5 3.9*** Volts IC = 150A, VGE = 15V, Tj = 125°C — 4.0 — Volts Total Gate Charge QGVCC = 2250V, IC = 150A, VGE = 15V — 1.4 — µC Emitter-Collector Voltage** VECIE = 150A, VGE = 0V — 4.7 5.6 Volts * Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). *** Pulse width and repetition rate should be such that device junction temperature rise is negligible. 2 09/12 Rev. 8 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com QID4515001 Dual IGBTMOD™ HVIGBT Module 150 Amperes/4500 Volts Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Input Capacitance Cies —18—nF Output Capacitance CoesVGE = 0V, VCE = 10V — Reverse Transfer Capacitance Cres —0.4— nF Resistive Turn-on Delay Time td(on)VCC = 2250V, IC = 150A, Load Rise Time Switching Turn-off Delay Time Times Fall Time trVGE = ±15V, td(off)RG = 60Ω, LS = 180nH tf Inductive Load 1.33 — nF — — 1.5 µs — — 0.5 µs — — 3.5 µs — — 1.2 µs Turn-on Switching Energy EonTj = 125°C, IC = 150A, VGE = ±15V, — 600 — mJ/P Turn-off Switching Energy EoffRG = 60Ω, VCC = 2250V, — 450 — mJ/P trrVCC = 2250V, IE = 150A, — — 1.8 µs Diode Reverse Recovery Charge** QrrVGE = ±15V, RG(on) = 60Ω, — 81* — µC Diode Reverse Recovery Energy ErecLS = 180nH , Inductive Load — 55 — mJ/P Stray Inductance (C1-E2) LSCE —60—nH Lead Resistance Terminal-Chip RCE —0.8—mΩ LS = 180nH , Inductive Load Diode Reverse Recovery Time** Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Thermal Resistance, Junction to Case*** Rth(j-c) Q Per IGBT — — 0.087 °C/W Thermal Resistance, Junction to Case*** Rth(j-c) D Per FWDi — — 0.174 °C/W Contact Thermal Resistance, Case to Fin Rth(c-f) Comparative Tracking Index Per Module, —0.018—°C/W Thermal Grease Applied, λgrease = 1W/mK CTI 600 — — Clearance Distance in Air (Terminal to Base) da(t-b) 35.0— — mm Creepage Distance Along Surface ds(t-b) 64 — —mm da(t-t) 19 — —mm ds(t-t) 54 — —mm (Terminal to Base) Clearance Distance in Air (Terminal to Terminal) Creepage Distance Along Surface (Terminal to Terminal) *Pulse width and repetition rate should be such that device junction temperature rise is negligible. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). ***TC measurement point is just under the chips. 09/12 Rev. 8 3 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 6 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) VGE = 15V Tj = 25°C Tj = 125°C 5 4 3 2 1 0 50 100 200 150 5 4 3 2 1 0 250 0 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) Single Pulse TC = 25°C Per Unit Base = R th(j-c) = 0.174 K/W 1.0 0.8 0.6 0.4 0.2 0 10-3 10-2 10-1 Single Pulse TC = 25°C Per Unit Base = R th(j-c) = 0.087 K/W 1.0 0.8 0.6 0.4 0.2 0 10-3 10-2 10-1 100 EMITTER CURRENT, IE, (AMPERES) TIME, (s) HALF-BRIDGE TURN-ON SWITCHING ENERGY CHARACTERISTICS (TYPICAL) HALF-BRIDGE TURN-OFF SWITCHING ENERGY CHARACTERISTICS (TYPICAL) 750 VCC = 2250V VGE = ±15V RG = 60Ω LS = 180nH Tj = 125°C Inductive Load Integrated Over Range of 10% 1000 750 500 250 0 100 0 50 100 150 500 375 250 125 0 200 VCC = 2250V VGE = ±15V RG = 60Ω LS = 180nH Tj = 125°C Inductive Load Integrated Over Range of 10% 625 0 50 100 150 200 COLLECTOR CURRENT, IC, (AMPERES) FREE-WHEEL DIODE REVERSE RECOVERY CHARACTERISTICS (TYPICAL) TURN-OFF SWITCHING SAFE OPERATING AREA (RBSOA) (TYPICAL) DIODE REVERSE RECOVERY SAFE OPERATING AREA (TYPICAL) 350 62.5 50.0 37.5 VCC = 2250V VGE = ±15V RG = 60Ω LS = 180nH Tj = 25°C Inductive Load Integrated Over Range of 10% IGBT Drive Conditions 25.0 12.5 0 50 100 150 200 COLLECTOR CURRENT, IC, (VOLTS) REVERSE RECOVERY ENERGY, Erec, (mJ/P) 250 1.2 COLLECTOR CURRENT, IC, (AMPERES) EMITTER CURRENT, IE, (AMPERES) 4 200 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT) TIME, (s) 75.0 0 150 100 1250 1.2 TURN-OFF SWITCHING ENERGY, Eon, (mJ/P) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) Zth = Rth • (NORMALIZED VALUE) COLLECTOR CURRENT, IC, (AMPERES) 50 TURN-OFF SWITCHING ENERGY, Eoff, (mJ/P) 0 Tj = 25°C Tj = 125°C REVERSE RECOVERY CURRENT, Irr, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 6 NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) Zth = Rth • (NORMALIZED VALUE) QID4515001 Dual IGBTMOD™ HVIGBT Module 150 Amperes/4500 Volts 300 250 200 150 VCC ≤ 3000V VGE = ±15V RG ≥ 60Ω LS = 100nH Tj = 125°C 100 50 0 0 1000 2000 3000 4000 5000 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 350 VCC ≤ 3000V di/dt ≤ 500A/μs Tj = 125°C 300 250 200 150 100 50 0 0 1000 2000 3000 4000 5000 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 09/12 Rev. 8