CDCE421 www.ti.com SCAS842 – APRIL 2007 Fully Integrated Wide-Range, Low-Jitter, Crystal-Oscillator Clock Generator • FEATURES • • • • • • • Single 3.3V Supply High-Performance Clock Generator Incorporating Crystal-Oscillator Circuitry With Integrated Frequency Synthesizer Low-Output Jitter, as Low as 380 fs (rms Integrated Between 10 kHz–20 MHz) Low Phase Noise at High Frequency; at 708 MHz It Is Less Than –109 dBc/Hz at 10-kHz and –146 dBc/Hz at 10-MHz Offset From the Carrier Supports Crystal Frequencies Between 27.35 MHz to 38.33 MHz Output Frequency Ranges From 10.9 MHz up to 766.7 MHz and From 875.2 MHz up to 1175 MHz Low-Voltage Differential Signaling (LVDS) Output, 100-Ω Differential Off-Chip Termination, 10.9-MHz to 400-MHz Frequency Range • • • • • • • • • APPLICATIONS • A A Differential Low-Voltage Positive Emitter-Coupled Logic (LVPECL) Output, 10.9-MHz to 1.175-GHz Frequency Range Two Fully Integrated Voltage-Controlled Oscillators (VCOs) Support Wide Output Frequency Range Fully Integrated Programmable Loop Filter Typical Power Consumption 240 mW in LVDS Mode and 300 mW in LVPECL Mode Chip-Enable Control Pin Simple Serial Interface Allows Programming After Manufacturing Integrated On-Chip Non-Volatile Memory (EEPROM) to Store Settings Without the Need to Apply High Voltage to the Device Die or QFN24 Package ESD Protection Exceeds 2 kV HBM Industrial Temperature Range –40°C to 85°C Low-Cost, High-Frequency Crystal Oscillator A CE SDATA Output Enable/Programming Interface and EEPROM for Configuration Settings LVPECL or LVDS Feedback Divider VCO 1 Output Divider X-tal Prescaler Crystal Oscillator Input PFD/Charge Pump Loop Filter CLK NCLK VCO 2 B0216-01 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Copyright © 2007, Texas Instruments Incorporated CDCE421 www.ti.com SCAS842 – APRIL 2007 DESCRIPTION The CDCE421 is a high-performance, low-phase-noise clock generator. It has two fully integrated, low-noise, LC-based voltage controlled oscillators (VCOs) that operate in the 1.750-GHz–2.350-GHz frequency range. It has an integrated crystal oscillator that operates in conjunction with an external AT-cut crystal to produce a stable frequency reference for the PLL-based frequency synthesizer. The output frequency (fout) is proportional to the frequency of the input crystal (fxtal). The prescaler divider, feedback divider, output divider, and VCO selection are what set (fout) with respect to (fxtal). For a desired frequency (fout), look in Table 1 and find the corresponding settings in the same row. Use Equation 1 to calculate the exact crystal oscillator frequency needed for the desired output. f xtal + OutputDivider ǒFeedbackDivider Ǔ f out (1) Output divider(1) = 1, 2, 4, 8, 16, or 32 Feedback divider(2) = 12, 16, 20, or 32 (1)Output divider and feedback divider should be from the same row in Table 1. (2)Feedback divider is set automatically with respect to the prescaler setting in Table 1. A high-level block diagram of the CDCE421 is shown in Figure 1. The CDCE421 supports one differential LVDS clock output or one differential LVPECL output. All device settings are programmable through a Texas Instruments proprietary simple serial interface. The device operates in a 3.3-V supply environment and is characterized for operation from –40°C to 85°C. The CDCE421 is available in die form or in a QFN-24 package. XIN 1 XIN 2 Crystal Oscillator Loop Filter VCO 1 1890 PFD/ Charge Pump VCO 2 2200 Feedback Divider 12, 16, 20 and 32 LVPCL Prescaler 2, 3, 4 and 5 CE 1-Pin Interface and Control LVDS EEPROM Output Divider 1, 2, 4, 8, 16 and 32 SDATA B0217-01 Figure 1. High-Level Block Diagram of the CDCE421 In the CDCE421, the feedback divider is set automatically with respect to the prescaler setting. The product of the prescaler and the feedback divider will be either 60 or 64, as shown in Table 1, to keep the control loop stable. 2 Submit Documentation Feedback CDCE421 www.ti.com SCAS842 – APRIL 2007 DEVICE SETUP AND CONFIGURATION Table 1. Crystal Frequency Selection and Device Settings DESIRED OUTPUT FREQUENCY (MHz) VCO SELECTION OUTPUT DIVIDER PRESCALER SETTING FEEDBACK DIVIDER (1) From To From To 1020.0 1175.0 31.875 36.719 VCO 2 1 2 32 1020.0 27.351 31.875 VCO 1 1 2 32 875.2 (2) 650.0 (1) (2) REQUIRED INPUT CRYSTAL FREQUENCY (MHz) 766.7 (2) 32.500 38.333 VCO 2 1 3 20 583.5 650.0 29.174 32.500 VCO 1 1 3 20 510.0 587.5 31.875 36.719 VCO 2 1 4 16 437.6 510.0 27.351 31.875 VCO 1 1 4 16 408.0 460.0 34.000 38.333 VCO 2 1 5 12 350.1 408.0 29.174 34.000 VCO 1 1 5 12 340.0 383.3 34.000 38.333 VCO 2 2 3 20 291.7 340.0 29.174 34.000 VCO 1 2 3 20 255.0 293.8 31.875 36.719 VCO 2 2 4 16 218.8 255.0 27.351 31.875 VCO 1 2 4 16 204.0 230.0 34.000 38.333 VCO 2 2 5 12 175.0 204.0 29.174 34.000 VCO 1 2 5 12 170.0 191.7 34.000 38.333 VCO 2 4 3 20 145.9 170.0 29.174 34.000 VCO 1 4 3 20 127.5 146.9 31.875 36.719 VCO 2 4 4 16 109.4 127.5 27.351 31.875 VCO 1 4 4 16 102.0 115.0 34.000 38.333 VCO 2 4 5 12 87.5 102.0 29.174 34.000 VCO 1 4 5 12 85.0 95.8 34.000 38.333 VCO 2 8 3 20 72.9 85.0 29.174 34.000 VCO 1 8 3 20 63.8 73.4 31.875 36.719 VCO 2 8 4 16 54.7 63.8 27.351 31.875 VCO 1 8 4 16 51.0 57.5 34.000 38.333 VCO 2 8 5 12 43.8 51.0 29.174 34.000 VCO 1 8 5 12 42.5 47.9 34.000 38.333 VCO 2 16 3 20 36.5 42.5 29.174 34.000 VCO 1 16 3 20 31.9 36.7 31.875 36.719 VCO 2 16 4 16 27.4 31.9 27.351 31.875 VCO 1 16 4 16 25.5 28.8 34.000 38.333 VCO 2 16 5 12 21.9 25.5 29.174 34.000 VCO 1 16 5 12 21.3 24.0 34.000 38.333 VCO 2 32 3 20 18.2 21.3 29.174 34.000 VCO 1 32 3 20 15.9 18.4 31.875 36.719 VCO 2 32 4 16 13.7 15.9 27.351 31.875 VCO 1 32 4 16 12.8 14.4 34.000 38.333 VCO 2 32 5 12 10.9 12.8 29.174 34.000 VCO 1 32 5 12 The feedback divider is set automatically with respect to the prescaler setting. Discontinuity in frequency range Submit Documentation Feedback 3 CDCE421 www.ti.com SCAS842 – APRIL 2007 DEVICE SETUP EXAMPLE The following example illustrates the procedure to calculate the required AT-cut crystal frequency needed to generate a desired output frequency. Assuming the requirement to generate an output frequency of 622.08 MHz, Table 1 shows that the desired output frequency lies between 583.5 and 680 MHz. DESIRED OUTPUT FREQUENCY (MHz) (1) REQUIRED INPUT CRYSTAL FREQUENCY (MHz) VCO SELECTION OUTPUT DIVIDER PRESCALER SETTING FEEDBACK DIVIDER (1) From To From To 650.0 766.7 32.500 38.333 VCO 2 1 3 20 583.5 650.0 29.174 32.500 VCO 1 1 3 20 510.0 587.5 31.875 36.719 VCO 2 1 4 16 The feedback divider is set automatically with respect to the prescaler setting. So this means that the device must be configured with: VCO = VCO 1 Output divider = 1 Prescaler setting = 3 To determine the right crystal frequency needed to get 622.08 MHz with these settings, substitute values into Equation 1. f xtal + OutputDivider ǒFeedbackDivider Ǔ f out f xtal + ǒ201 Ǔ 622.08 + 31.154 MHz (2) The AT-cut frequency should be 31.154 MHz (between 29.174 MHz and 32.500 MHz. as shown in Table 1) . SERIAL INTERFACE AND CONTROL The CDCE421 uses a unique Texas Instruments proprietary interface protocol that can be configured and programmed via a single input pin to the device. The architecture enables only writing to the device from this input pin. Reading the content of a register can be achieved by sending a read command on the input pin and monitoring the output pins (LVDS or LVPECL). In a case where the output pins cannot be used to read the content, the software controlling the interface must account for what is written to the EEPROM and when it is programmed. Monitoring the outputs verifies the programming modes, and cycling power on the device verifies that the EEPROM is holding the proper configuration. The CDCE421 can be configured and programmed via the SDATA input pin. For this purpose, a square-wave programming sequence must be written to the device as described in the following section. During the EEPROM programming phase, the device requires a stable VCC of 3.3 V ± 100 mV for secure writing of the EEPROM cells. After each Write to WordX, the written data is latched, made effective, and offers look-ahead before the actual data is stored into the EEPROM. The following table summarizes all valid programming commands. SDATA Enter Programming Mode (State 1 → State 2); bits must be sent in the specified order with the specified timing. Otherwise, a time-out occurs. 11 1011 Enter Register Read Back Mode; bits must be sent in the specified order with the specified timing. Otherwise, a time-out occurs. 000 xxxx xxxx Write to Word0 (State 2) (1) (2) (3) 100 xxxx xxxx Write to Word1 (State 2)(1) (2) (3) 010 xxxx xxxx Write to Word2 (State 2)(1) (2) (3) 110 xxxx xxxx Write to Word3 (State 2)(1) (2) (3) (1) (2) (3) 4 FUNCTION 00 1100 Each rising edge causes a bit to be latched. Between the bits, some longer time delays can occur, but this has no effect on the data. A Write to WordX is expected to be 10 bits long. After the 10th bit, the respective word is latched and its effect can be observed as look-ahead function. Submit Documentation Feedback CDCE421 www.ti.com SCAS842 – APRIL 2007 SDATA FUNCTION 2)(1) (2) (3) 001 xxxx xxxx Write to Word4 (State 101 xxxx xxxx Write to Word5 (State 2)(1) (2) (3) 111 xxxx xxxx State machine jump: All other patterns not defined as follows cause an exit to normal mode. 111 0101 0101 Jump: Enter EEPROM programming with EEPROM lock (State 2 → State 3) 111 1111 0000 Jump: Enter EEPROM programming without EEPROM lock (State 2 → State 4) 111 0000 0000 Jump: Exit EEPROM programming (State 3 or State 4 → State 1) Power Up: Read EEPROM & Configure Write WORD 0 11 Bit Written th 11 Bit Written Write WORD 2 Power Up Reset Completed th Write WORD 1 SDATA = 100 xxxx xxxx SDATA = 000 xxxx xxxx State 1: IDLE Normal Operation SDATA = 111011 SDATA = 111 1111 1111 SDATA = 010 xxxx xxxx th 60 Clock Applied State 5: Read Back Mode th 11 Bit Written State 2: Programming Mode SDATA = 110 xxxx xxxx Write WORD 3 SDATA = 001100 th 11 Bit Written SDATA = 001 xxxx xxxx th SDATA = 101 xxxx xxxx 11 Bit Written SDATA = 111 1111 0000 SDATA = 111 0101 0101 Write WORD 4 th 11 Bit Written Write WORD 5 SDATA = 111 0000 0000 SDATA = 111 0000 0000 State 4: Programming EEPROM Locking State 3: Programming EEPROM No Locking F0016-02 NOTE: In States 2, 3, 4, and 5, the signal pin CE is disregarded and has no influence on power down. Figure 2. State Flow-Diagram of Single-Pin Interface Submit Documentation Feedback 5 CDCE421 www.ti.com SCAS842 – APRIL 2007 Enter Programming Mode Figure 3 shows the timing behavior of data to be written into SDATA. The sequence shown is 00 1100. If the high period is as short as t1, this is interpreted as 0. If the high period is as long as t3, this is interpreted as a 1. This behavior is achieved by shifting the incoming signal SDATA by time t5 into signal SDATA_DELAYED. As can be seen in Figure 3, SDATA_DELAYED can be used to latch (or strobe) SDATA. The timing specifications for t1–t7, tr, and tf are shown in Figure 3. t7 CE t6 t2 t1 t4 tf tr t3 SDATA t5 SDATA DELAYED 0 DATA 0 1 1 0 0 T0042-05 MIN TYP MAX UNIT 60 70 80 kHz fSDATACLK Repeat frequency of programming t1 LOW signal: high-pulse duration 0.2 t ms t2 LOW signal: low-pulse duration while entering programming sequence 0.8 t ms t2 LOW signal: low-pulse duration while programming bits 0.8 t ms t3 HIGH signal: high-pulse duration 0.8 t ms t4 HIGH signal: low-pulse duration while entering programming sequence 0.2 t ms t4 HIGH signal: low-pulse duration while programming bits 0.2 t ms t6 Time-out during Entering Programming Mode and Enter Read Back Mode until next bit must turn on 16 t7 CE-high time before first SDATA can be clocked in 3t tr and tf Rise Time and Fall Time µs ms 2 ns t = 1 / fSDATACLK Figure 3. SDATA/CE Timing EEPROM PROGRAMMING Load all the registers in RAM by writing Word0 through Word5, and after going back to State 2, then going to State 3 (programming EEPROM, no locking) or State 4 (programming EEPROM with locking), the contents of Word0–Word5 are saved in the EEPROM. Wait 10 ms in State 3 or State 4 when programming the EEPROM before moving to State 2 (the idle state). NOTE: When writing to the device for functionality testing and verification via the serial bus, only the RAM is being accessed. 6 Submit Documentation Feedback CDCE421 www.ti.com SCAS842 – APRIL 2007 EXAMPLE: Programming Cycle of Six Words and Programming Into EEPROM The following sequence shows how to enter programming mode and how the different words can be written. The addressing of Word0 … Word5 is shown in bold. After the word address, the payload for the respective word is clocked in. In this example, this is followed by a jump from State 2 → State 3 into enter EEPROM programming with EEPROM lock. In the EEPROM-programming state, it is necessary to wait at least 10 ms for safe programming. The last command is a jump from State 3 into State 1 (normal operation). Cycle power and verify that the device functions as programmed. Enter Programming Sequence Word0 Payload After 8 bits, the payload data is transferred to the RAM and is active. Word1 · · · · · · Payload Word5 Payload Wait for at least 10 ms before exiting EEPROM write phase, for safe operation. State Machine Jump State 2 ® State 3 State Machine Jump State 3 ® State 1 T0043-03 Figure 4. Programming Cycle of Six Words and Programming Into EEPROM Enter Register Readback Mode and Related Timing Diagram Similar to the enter programming mode sequence, the enter register read back mode is written into SDATA. After the command has been issued, the SDATA input is reconfigured as clock input. By applying one clock, the EEPROM content is read into shift registers. Now, by further applying clocks at SDATA, the EEPROM content can be clocked out and observed at OUTP/OUTN. There are 59 bits to be clocked out. With the 61st rising clock edge, the OUTP/OUTN pins are reconfigured back into normal operation. Submit Documentation Feedback 7 CDCE421 www.ti.com SCAS842 – APRIL 2007 SDATA 1 1 1 0 1 1 Output Oscillation FOUT Enter Register Read-Back Mode 0 Fetch EEPROM Content With st 1 CLK 1 56 2 57 Output Oscillation 58 60th Falling Edge Switches Back Into Normal Operation EEPROM Content st 1 Bit Available After st 1 Falling Edge T0044-03 In the following table, the content of the output bit stream is summarized. Important to notice: bit 0 is clocked out first. OUTPUT BIT STREAM FUNCTION Bits[0:2] Revision identifier (MSB first) Bits[3:8] VCO calibration word Bit[9] EEPROM status: 0 = EEPROM has never been written 1 = EEPROM has been programmed before Bit[10] EEPROM lock: 0 = EEPROM can be rewritten 1 = EEPROM is locked, rewriting to the EEPROM is not possible any more Bits[11:18] Storage value, Word5 (MSB first) Bits[19:26] Storage value, Word4 (MSB first) Bits[27:34] Storage value, Word3 (MSB first) Bits[35:42] Storage value, Word2 (MSB first) Bits[43:50] Storage value, Word1 (MSB first) Bits[51:58] Storage value, Word0 (MSB first) REGISTER DESCRIPTION Word 0: BIT NAME DESCRIPTION/FUNCTION RECOMMENDED VALUE 0 C0 Register selection W 0 1 C1 Register selection W 0 2 C2 Register selection W 0 3 SELVCO VCO select, 0 = VCO1, 1 = VCO2 W User 4 SELPRESC Prescaler setting, bit 0 W User 5 SELPRESC Prescaler setting, bit 1 W User 6 OUTSEL Output divider select, bit 0 W User 7 OUTSEL Output divider select, bit1 W User 8 OUTSEL Output divider select, bit 2 W User 9 DRVSEL Driver select, 0 = LVDS, 1 = PECL W User 10 ILFSEL Loop filter bias select W 0 4 5 6 7 Divide by value (SELPRESC 1, SELPRESC 0) Divide by 5 = (00), 3 = (01), 4 = (10), 2 = (11) Output divider (OUTSEL2, OUTSEL1, OUTSEL0) Divide by 1 = (000), 2 = (001), 4 = (010), 8 = (011), 16 = (100), 32 = (101) 8 8 TYPE Submit Documentation Feedback CDCE421 www.ti.com SCAS842 – APRIL 2007 Word 1: BIT NAME DESCRIPTION/FUNCTION TYPE RECOMMENDED VALUE 0 C0 Register selection W 1 1 C1 Register selection W 0 2 C2 Register selection W 0 3 LFRCSEL Loop filter control settings, bit 0 W 1 4 LFRCSEL Loop filter control settings, bit 1 W 1 5 LFRCSEL Loop filter control settings, bit 2 W 1 6 LFRCSEL Loop filter control settings, bit 3 W 1 7 LFRCSEL Loop filter control settings, bit 4 W 1 8 LFRCSEL Loop filter control settings, bit 5 W 0 9 LFRCSEL Loop filter control settings, bit 6 W 1 10 LFRCSEL Loop filter control settings, bit 7 W 0 TYPE RECOMMENDED VALUE Word 2: BIT NAME DESCRIPTION/FUNCTION 0 C0 Register selection W 0 1 C1 Register selection W 1 2 C2 Register selection W 0 3 LFRCSEL Loop filter control settings, bit 8 W 1 4 LFRCSEL Loop filter control settings, bit 9 W 1 5 LFRCSEL Loop filter control settings, bit 10 W 0 6 LFRCSEL Loop filter control settings, bit 11 W 0 7 LFRCSEL Loop filter control settings, bit 12 W 0 8 LFRCSEL Loop filter control settings, bit 13 W 0 9 LFRCSEL Loop filter control settings, bit 14 W 0 10 LFRCSEL Loop filter control settings, bit 15 W 0 TYPE RECOMMENDED VALUE Word 3: BIT NAME DESCRIPTION/FUNCTION 0 C0 Register selection W 1 1 C1 Register selection W 1 2 C2 Register selection W 0 3 LFRCSEL Loop filter control settings, bit 16 W 0 4 LFRCSEL Loop filter control settings, bit 17 W 0 5 LFRCSEL Loop filter control settings, bit 18 W 0 6 ICPSEL Charge pump current sel, bit 0 W 1 7 ICPSEL Charge pump current sel, bit 1 W 1 8 ICPSEL Charge pump current sel, bit 2 W 1 9 ICPSEL Charge pump current sel, bit 3 W 1 10 Not Used W 0 Submit Documentation Feedback 9 CDCE421 www.ti.com SCAS842 – APRIL 2007 Word 4: BIT NAME DESCRIPTION/FUNCTION TYPE RECOMMENDED VALUE 0 C0 Register selection W 0 1 C1 Register selection W 0 2 C2 Register selection W 1 3 CALWRD VCO calibration word, bit 0 W 0 4 CALWRD VCO calibration word, bit 1 W 0 5 CALWRD VCO calibration word, bit 2 W 0 6 CALWRD VCO calibration word, bit 3 W 0 7 CALWRD VCO calibration word, bit 4 W 0 8 CALWRD VCO calibration word, bit 5 W 0 9 CALOVR VCO calibration override W 0 10 ENCAL Enable VCO calibration W 1 TYPE RECOMMENDED VALUE Word 5: BIT 10 NAME DESCRIPTION/FUNCTION 0 C0 Register selection W 1 1 C1 Register selection W 0 2 C2 Register selection W 1 3 TITSTCFG TI test use, bit 0 W 0 4 TITSTCFG TI test use, bit 1 W 0 5 TITSTCFG TI test use, bit 2 W 0 6 TITSTCFG TI test use, bit 3 W 0 7 Not used W 0 8 Not used W 0 9 Not used W 0 10 Not used W 0 Submit Documentation Feedback CDCE421 www.ti.com SCAS842 – APRIL 2007 PACKAGE (DIE) The CDCE421 is available in die form or in a QFN 24-pin package. The die version pad locations and numbers are shown in Figure 5. 10 9 8 7 vcc GND 11 SIGNALS 12 TI TEST ONLY 13 14 15 16 17 6 PAD1 5 4 3 2 M0070-01 Figure 5. Pinout of the CDCE421 Die PAD DESCRIPTION Table 2 shows the pin description for the CDCE421 die. Table 2. Pad Description of CDCE421 (See Appendix B for More Information) TERMINAL NAME PAD NO. TYPE ESD Protection CE 1 O Y Chip enable CE = 1: enable the device and the outputs. CE = 0: disable all current sources; in LVDS mode, LVDSP = LVDSN = Hi-Z; in LVPECL mode, LVPECLP = LVPECLN = Hi-Z. OUTN 3 O Y High-speed negative differential LVPECL or LVDS outputs. (Outputs are enabled by CE and selected by the EEPROM configuration registers.) OUTP 6 O Y High-speed positive differential LVPECL or LVDS outputs. (Outputs are enabled by CE and selected by the EEPROM configuration registers.) 2 I Y Programming pin using TI proprietary interface protocol SDATA Test pins 7, 8, 11–13, 16, 17 Description Do not connect (TI Manufacturing test pins). VCC 9, 10 Power Y 3.3-V power supply VSS 4, 5 GND Y Ground XIN 1 14 I Y Connect XIN1 to one end of the crystal and XIN2 to the other end of the crystal. XIN 2 15 I N Submit Documentation Feedback 11 CDCE421 www.ti.com SCAS842 – APRIL 2007 PACKAGE (QFN24) The CDCE421 is also packaged in a QFN 24-pin package. The QFN package footprint is shown. Pad locations and numbers are shown in Figure 6. NC NC XIN 2 XIN 1 NC NC 24 23 22 21 20 19 RGE PACKAGE (TOP VIEW) CE 1 18 NC NC 2 17 VCC SDATA 3 16 VCC CDCE421 12 NC NC 13 11 6 NC NC 10 NC OUTP 14 9 5 GND NC 8 NC GND 15 7 4 OUTN NC P0024-05 Figure 6. Pinout of the CDCE421 QFN-24 Package PIN DESCRIPTION Table 3 shows the pin description for the CDCE421 QFN-24 Package. Table 3. Pinout Description of CDCE421 TERMINAL NAME CE GND No connect TERMINAL NO. TYPE ESD Protection 1 I Y Chip enable CE = 1: enable the device and the outputs. CE = 0: disable all current sources; in LVDS mode, LVDSP = LVDSN = Hi-Z; in LVPECL mode, LVPECLP = LVPECLN = Hi-Z. 8, 9 GND Y Ground 2, 4–6, 11–15, 18–20, 23,24 Description Do not connect these pins. Leave them floating. OUTN 7 O Y High-speed negative differential LVPECL or LVDS outputs. (Outputs are enabled by CE and selected by the EEPROM configuration registers.) OUTP 10 O Y High-speed positive differential LVPECL or LVDS outputs. (Outputs are enabled by CE and selected by the EEPROM configuration registers.) SDATA 3 I Y Programming pin using TI proprietary interface protocol VCC 16, 17 Power Y 3.3-V power supply XIN 1 21 I Y XIN 2 22 GND N In crystal input mode, connect XIN1 to one end of the crystal and XIN2 to the other end of the crystal. In LVCMOS input single-ended driven mode, XIN1 (pin 21) acts as input reference and XIN2 should connect to GND. 12 Submit Documentation Feedback CDCE421 www.ti.com SCAS842 – APRIL 2007 OUTPUTS (LVPECL OR LVDS) The CDCE421 device has two sets of output drivers, LVPECL and LVDS, where the outputs are wire-ORed together. Only one output can be selected at a time; the other goes to the high-impedance state (Hi-Z). If the device is configured for an LVPECL, the output buffers go to Hi-Z and the termination resistors determine the state of the output (LVPECLP = LVPECLN = Hi-Z) in the device disable mode (CE = L). If the device is configured in LVDS mode, the outputs go to Hi-Z if the device is disabled (CE = L). ABSOLUTE MAXIMUM RATINGS over operating free-air temperature range (unless otherwise noted) VCC Supply voltage (2) VI Voltage range for all other input pins (2) IO Output current for LVPECL (1) VALUE UNIT –0.5 to 4.6 V –0.5 to VCC + 0.5 V –50 mA 2 kV –40 to 85 °C 125 °C –65 to 150 °C Electrostatic discharge (HBM) TA Characterized free-air temperature range (no airflow) TJ Maximum junction temperature Tstg Storage temperature range (1) (2) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. All voltage values are with respect to network ground terminal. RECOMMENDED OPERATING CONDITIONS over operating free-air temperature range (unless otherwise noted) VCC Supply voltage TA Ambient temperature (no airflow, no heat sink) MIN TYP MAX 3 3.3 3.6 V 85 °C –40 UNIT ELECTRICAL CHARACTERISTICS recommended operating conditions for CDCE421 device PARAMETER TEST CONDITIONS MIN TYP MAX 3 UNIT VCC Supply voltage 3.3 3.6 V IVCC(LVDS) Total current LVDS mode, 3.3 V, 366 MHz 73 93 mA IVCC(LVPECL) Total current consumption LVPECL mode, 3.3 V, 366 MHz 91 110 mA 400 MHz 454 mV 50 mV LVDS OUTPUT MODE (see Figure 10) fCLK Output frequency |VOD| LDVS differential output voltage ∆VOD LVDS VOD magnitude change VOS Offset voltage ∆VOS VOS magnitude change tr Output rise time 20% to 80% of VOUTpp 170 tf Output fall time 80% to 20% of VOUTpp 170 IOS 10.9 RL = 100 Ω –40°C to 85°C 240 0.84 400 1.1 1.39 25 V mV ps ps Short Vout+ to ground –20 mA Short Vout– to ground 20 mA Duty cycle of the output waveform 46% Submit Documentation Feedback 50% 53% 13 CDCE421 www.ti.com SCAS842 – APRIL 2007 ELECTRICAL CHARACTERISTICS (continued) recommended operating conditions for CDCE421 device PARAMETER TEST CONDITIONS MIN TYP MAX UNIT MHz LVPECL OUTPUT MODE (see Figure 11) fCLK Output frequency 10.9 1175 VOH LVPECL high-level output voltage VCC – 1.2 VCC – 0.81 VOL LVPECL low-level output voltage VCC – 2.17 VCC – 1.36 |VOD| LVPECL differential output voltage 407 1076 tr Output rise time 20% to 80% of VOUTpp tf Output fall time 80% to 20% of VOUTpp Duty cycle of the output waveform Duty cycle exception 630 MHz to 650 MHz 170 V V mV ps 170 ps 45% 55% 43% 57% LVCMOS INPUT VIL,CMOS Low-level CMOS input voltage VCC = 3.3 V VIH,CMOS High-level CMOS input voltage VCC = 3.3 V IL,CMOS Low- level CMOS input current VCC = VCC max, VIL = 0 V IH,CMOS High-level CMOS input current VCC = VCC min, VIH = 3.7 V 14 Submit Documentation Feedback 0.3 VCC V –200 µA 200 µA 0.7 VCC V CDCE421 www.ti.com SCAS842 – APRIL 2007 JITTER CHARACTERISTICS IN INPUT CLOCK MODE The jitter characterization test is performed using an LVCMOS input signal driving a CDCE421 device packaged in the QFN-24 package. 0.1 mF Phase Noise Analyzer XIN 1 CDCE421 50 W XIN 2 100 pF 150 W 150 W 150 W S0246-01 Figure 7. Jitter Test Configuration for an LVTTL Input Driving the CDCE421 Table 4. Measured Output Jitter LVPECL (Typical Measured Output Jitter), ps Output Frequency (MHz) LVDS (Typical Measured Output Jitter), ps Input Frequency (MHz) VCO Prescaler Divider JRMS (12 kHz to 20 MHz) Tj (Total Jitter) Dj (Deterministic Jitter) JRMS (12 kHz to 20 MHz) Tj (Total Jitter) Dj (Deterministic Jitter) 100 33.3333 1 5 4 0.507 35.33 11.54 0.552 41.86 21.4 106.25 35.4167 2 5 4 0.53 30.39 11 0.564 35.38 16.01 125 31.25 1 4 4 0.529 47.47 25.2 0.561 74.14 53.51 156.25 31.25 1 3 4 0.472 31.54 9.12 0.482 42.31 23.33 212.5 35.4167 2 5 2 0.512 33.96 13.78 0.523 58.45 37.84 250 31.25 1 4 2 0.42 36.98 18.52 0.525 87.5 67.35 312.5 31.25 1 3 2 0.378 29.82 11 0.45 66.44 47.49 370 30.8333 1 5 1 0.369 29.6 12.05 0.439 69.77 51.2 400 33.3333 1 5 1 0.377 28.1 11.48 0.501 69.75 51.87 708 35.4 2 3 1 0.438 31.65 14.84 1000 31.25 1 2 1 0.456 40.34 19.66 Submit Documentation Feedback 15 CDCE421 www.ti.com SCAS842 – APRIL 2007 For the case of a CDCE421 being referenced by an external and cleaner LVCMOS input of 35.42 MHz, Figure 8 shows the SSB phase noise plot of the output at 708 MHz from 100 Hz to 40 MHz from the carrier. Note the dependence of output jitter on the input reference jitter. See Figure 13 for test setup. 0 −20 Phase Noise − dBc/Hz −40 −60 −80 −100 −120 −140 −160 10 100 1k 10k 100k 1M 10M 100M f − Single-Sideband Frequency − Hz G001 Figure 8. Phase Noise Plot for LVPECL Output at 708 MHz Table 5. Phase Noise Parameters With LVCMOS Input of 35.4 MHz and LVPECL Output at 708 MHz Phase noise specifications under following assumptions: input frequency f = 35.42 MHz (VCO = 2, prescaler = 3, output divider = 1), fout = 708 MHz (driver mode = LVPECL) PARAMETER phn100 Phase noise at 100 Hz phn1k phn10k MIN TYP MAX UNIT –95 dBc/Hz Phase noise at 1 kHz –105 dBc/Hz Phase noise at 10 kHz –109 dBc/Hz phn100k Phase noise at 100 kHz –114 dBc/Hz phn1M Phase noise at 1 MHz –126 dBc/Hz phn10M Phase noise at 10 MHz –146 dBc/Hz phn20M Phase noise at 20 MHz –146 dBc/Hz JRMS RMS jitter integrated from 12 kHz to 20 MHz 438 fs 16 Submit Documentation Feedback CDCE421 www.ti.com SCAS842 – APRIL 2007 For the case of CDCE421 being referenced by a clean external LVCMOS input of 33.33 MHz, Figure 9 shows the SSB phase noise plot of the output at 400 MHz from 100 Hz to 40 MHz from carrier. See Figure 12 for test setup. 0 −20 Phase Noise − dBc/Hz −40 −60 −80 −100 −120 −140 −160 10 100 1k 10k 100k 1M 10M 100M f − Single-Sideband Frequency − Hz G002 Figure 9. Phase Noise Plot for LVDS Output at 400 MHz Table 6. Phase Noise Parameters With LVCMOS Input of 33.33 MHz and LVDS Output at 400 MHz Phase noise specifications under following assumptions: input frequency f = 33.33 MHz (VCO = 1, prescaler = 5, output divider = 1), fout = 400 MHz (driver mode = LVDS) PARAMETER phn100 Phase noise at 100 Hz phn1k phn10k MIN TYP MAX UNIT –99 dBc/Hz Phase noise at 1 kHz –107 dBc/Hz Phase noise at 10 kHz –115 dBc/Hz phn100k Phase noise at 100 kHz –119 dBc/Hz phn1M Phase noise at 1 MHz –128 dBc/Hz phn10M Phase noise at 10 MHz –144 dBc/Hz phn20M Phase noise at 20 MHz –145 dBc/Hz JRMS RMS jitter integrated from 12 kHz to 20 MHz 501 fs Submit Documentation Feedback 17 CDCE421 www.ti.com SCAS842 – APRIL 2007 APPENDIX A: TEST CONFIGURATIONS Test setups are used to characterize the CDCE421 device in ac and dc terminations. The following figures illustrate all four setups used to terminate the clock signal driven by the device under test. 100 W LVDS LVDS S0248-01 Figure 10. LVDS DC Termination Test Configuration LVPECL LVPECL 50 W 50 W VCC – 2V S0249-01 Figure 11. LVPECL DC Termination Test Configuration Phase Noise Analyzer LVDS 50 W S0250-01 Figure 12. LVDS AC Termination Test Configuration Phase Noise Analyzer LVPECL 150 W 150 W 50 W S0251-01 Figure 13. LVPECL AC Termination Test Configuration 18 Submit Documentation Feedback CDCE421 www.ti.com SCAS842 – APRIL 2007 APPENDIX B: PACKAGE Packaging and bond wiring the CDCE421 is the responsibility of the oscillator vendor. Scribe (8~52 mm) 10 9 8 7 Scribe (8~52 mm) 11 Pad Legend 12 13 1732 mm #1 = CE #2 = SDATA #3 = OUTN #4 = GND #5 = GND #6 = OUTP #7 = NC #8 = TEST #9 = VCC #10 = VCC #11 = TEST #12 = TEST #13 = TEST #14 = XIN 1 #15 = XIN 2 (XIN 2 for XO) #16 = NC #17 = TEST M0071-01 14 15 16 17 6 PAD1 5 4 3 2 2032 mm PAD X1 Y1 X2 Y2 1 41.85 198.65 111.85 268.65 2 990.07 48.65 1060.07 118.65 3 1918.35 237.28 1988.35 307.28 4 1917.93 355.14 1987.93 425.14 5 1922.2 456.66 1992.2 526.66 6 1917.86 573.58 1987.86 643.58 7 714.86 1619.99 784.86 1689.99 8 595.74 1620.25 665.74 1690.25 9 392.97 1621.07 462.97 1691.07 10 198.04 1620.76 268.04 1690.76 11 41.9 1469.91 111.9 1539.91 12 42.19 1310.51 112.19 1380.51 13 42.35 1154.46 112.35 1224.46 14 41.97 993.15 111.97 1063.15 15 42.84 881.73 112.84 951.73 16 41.87 771.71 111.87 841.71 17 41.87 617.6 111.87 687.6 The CDCE421 is designed to be mounted in a commonly used 6-pin oscillator package, where pin 2 (N/C) is the programming pin, in conjunction with CE for the XO design. Submit Documentation Feedback 19 PACKAGE OPTION ADDENDUM www.ti.com 7-May-2007 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Drawing Pins Package Eco Plan (2) Qty CDCE421RGER ACTIVE QFN RGE 24 3000 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR CDCE421RGERG4 ACTIVE QFN RGE 24 3000 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR CDCE421RGET ACTIVE QFN RGE 24 250 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR CDCE421RGETG4 ACTIVE QFN RGE 24 250 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR CDCE421YS ACTIVE XCEPT YS 0 30635 Green (RoHS & no Sb/Br) Lead/Ball Finish Call TI MSL Peak Temp (3) N / A for Pkg Type (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material) (3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. 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Addendum-Page 1 PACKAGE MATERIALS INFORMATION www.ti.com 17-May-2007 TAPE AND REEL INFORMATION Pack Materials-Page 1 PACKAGE MATERIALS INFORMATION www.ti.com Device 17-May-2007 Package Pins Site Reel Diameter (mm) Reel Width (mm) A0 (mm) B0 (mm) K0 (mm) P1 (mm) W Pin1 (mm) Quadrant CDCE421RGER RGE 24 MLA 330 12 4.3 4.3 1.5 12 12 PKGORN T2TR-MS P CDCE421RGET RGE 24 MLA 180 12 4.3 4.3 1.5 12 12 PKGORN T2TR-MS P TAPE AND REEL BOX INFORMATION Device Package Pins Site Length (mm) Width (mm) CDCE421RGER RGE 24 MLA 346.0 346.0 29.0 CDCE421RGET RGE 24 MLA 190.0 212.7 31.75 Pack Materials-Page 2 Height (mm) PACKAGE MATERIALS INFORMATION www.ti.com 17-May-2007 Pack Materials-Page 3 IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or service without notice. 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