RF2146 2 PCS LINEAR POWER AMPLIFIER Typical Applications • 4.8V CDMA PCS Handsets • Driver Amplifier in Cellular Base Stations • 4.8V TDMA PCS Handsets • Portable Battery-Powered Equipment 2 Product Description The RF2146 is a high-power, high-efficiency linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in 4-cell CDMA handheld digital cellular equipment, spread-spectrum systems, and other applications in the 1500MHz to 2000MHz band. The device is selfcontained with 50Ω input and the output can be easily matched to obtain optimum power, efficiency, and linearity characteristics. 0.020 0.014 0.034 REF 0.393 0.386 0.068 0.064 0.244 0.229 NOTES: 1. Shaded lead is pin 1. 2. All dimensions are excluding mold flash. 3. Lead coplanarity - 0.004 with respect to datum "A". 4. Max deviation from package center to leadframe center - 0.004. 5. Max misalignment between top center and bottom center - 0.004. Optimum Technology Matching® Applied ! Si Bi-CMOS GaAs HBT GaAs MESFET SiGe HBT Si CMOS 0.068 0.053 8° MAX 0° MIN 0.034 0.016 Si BJT -A0.008 0.004 0.157 0.150 0.020 REF POWER AMPLIFIERS • 4.8V PACS PCS Handsets 0.009 0.007 Package Style: CJ2BAT0 Features • Single 4V to 6.5V Supply VCC 1 16 GND • 28.5dBm Linear Output Power GND 2 15 GND • 18.5dB Gain With Analog Gain Control GND 3 14 GND • 37% Linear Efficiency RF IN 4 13 RF OUT • On-board Power Down Mode GND 5 12 RF OUT • 1500MHz to 2000MHz Operation GND 6 11 GND GND 7 10 GND GND 8 9 PC BIAS Functional Block Diagram Rev A3 001026 Ordering Information RF2146 RF2146 PCBA PCS Linear Power Amplifier Fully Assembled Evaluation Board RF Micro Devices, Inc. 7625 Thorndike Road Greensboro, NC 27409, USA Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com 2-147 RF2146 Absolute Maximum Ratings Parameter POWER AMPLIFIERS 2 Supply Voltage (No RF) Supply Voltage (POUT<30dBm) Power Control Voltage (VPC) DC Supply Current Input RF Power Output Load VSWR Ambient Operating Temperature Storage Temperature Parameter Rating Unit -0.5 to +8.0 -0.5 to +7.5 -0.5 to +5.0 or VCC 500 +15 10:1 -30 to +90 -40 to +150 VDC VDC V mA dBm Typ. RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s). °C °C Specification Min. Caution! ESD sensitive device. Max. Unit T=25 °C, VCC =4.8V, VPC =3.6V, PIN =+10dBm, Freq=1880MHz Overall Usable Frequency Range Linear Gain Maximum Linear Output Power Total Linear Efficiency Input Power for 28 dBm Output Adjacent Channel Power Rejection Input VSWR Second Harmonic Condition 1500 to 2000 18.5 28.5 37 +10 19 MHz dB CDMA Modulation % dBm -45 <2:1 -35 dBc CDMA Modulation, +28 dBm Output, At 1.25MHz Offset dBc Including Second Harmonic Trap dB ns ns µA V V Up to -0.5 dB of Final Power Down to +0.5 dB of Final Power “OFF” State Threshold Voltage at Input Threshold Voltage at Input V mA mA Operating voltage “ON” State VPC =3.6V, No RF Applied Power Down Off Isolation Turn On Time Turn Off Time Total Current VPC “OFF” Voltage VPC “ON” Voltage 25 200 350 3.4 0 3.6 TBD 0.2 4.0 Power Supply Power Supply Voltage Current into VPC pin Idle Current 2-148 4.0 to 6.5 13 70 Rev A3 001026 RF2146 Pin 1 Function VCC Description Power supply for the driver stage, and interstage matching. Shunt capacitance is required on this pin. The value of the capacitance is frequency dependent. 4.7pF centers the gain at 1880 MHz. Interface Schematic VCC RF IN From Bias Stages GND 3 4 GND RF IN 5 GND 6 7 8 GND GND BYP1 9 PC 10 11 12 13 14 15 16 GND GND RF OUT RF OUT GND GND BYP2 Rev A3 001026 Ground connection for final stage. Keep traces physically short and connect immediately to the ground plane for best performance. Same as pin 2. RF input. This is a 50Ω input, but the actual input impedance depends on the interstage matching network connected to pin 1. An external DC blocking capacitor is required if this port is connected to a DC path to ground or a DC voltage. Ground connection for the driver stage. Keep traces physically short and connect immediately to the ground plane for best performance. Same as pin 2. 2 POWER AMPLIFIERS 2 See pin 1. Same as pin 2. Bypass Pin. Part of the matching circuit for interstage match. DC connected to VCC1. Use a suitable bypass capacitor to ground. Keep capacitor as close to pin as possible. Power Control. When this pin is "low", all circuits are shut off. A "low" is typically 0.5V. When this pin is "high", the part operates normally, and the pin consumes approximately 13mA during normal operation. This pin should never exceed 5V. See pin 1. PC To RF Transistors Same as pin 2. Same as pin 2. RF Output and power supply for the output stage. The two output pins are combined, and bias voltage for the final stage is provided through these pins. An external matching network is required to provide the optimum load impedance; see the application schematics for details. Same as pin 12. RF OUT From Bias Stages See pin 12. Same as pin 2. Same as pin 2. Bypass Pin. Part of the matching circuit for interstage match. DC connected to VCC1. For 1880 MHz operation, use a 3.3pF capacitor to ground. Keep capacitor as close to pin as possible. See pin 1. 2-149 RF2146 Application Schematic 1880MHz 3.3 pF L=500 mil, W=20 mil VCC 3.3 µF POWER AMPLIFIERS 2 22 pF 4.7 pF RF IN 1 16 2 15 3 14 4 13 5 12 22 pF 3.3 µF 1 nF VCC 1/4 Wavelength Line; L=910 mil, W=20 mil 22 pF RF OUT 6 (PCB mat'l: FR-4; Thickness: 31 mil; 28 mil core) 3.3 nH 3.3 pF 22 pF 11 BIAS 7 10 8 9 PC 22 pF 22 pF 3.3 µF Application Schematic 2150MHz 1.6 pF L=500 mil, W=20 mil VCC 3.3 µF 22 pF 6.2 pF RF IN 1 16 2 15 3 14 4 13 5 12 3.3 µF 22 pF VCC 1/4 Wavelength Line; L=910 mil, W=20 mil 10 pF 6 (PCB mat'l: FR-4; Thickness: 31 mil; 28 mil core) 100 pF 2-150 RF OUT BIAS 2.2 nH 1.8 pF 1 pF 11 7 10 8 9 22 pF PC 22 pF 3.3 µF Rev A3 001026 RF2146 Evaluation Board Schematic (Download Bill of Materials from www.rfmd.com.) RF2146 C3 3.3 pF VCC C20 3.3 µF C11 100 pF C1 4.7 pF RF IN C5 100 pF (PCB mat'l: FR-4; Thickness: 31 mil; 28 mil core) C2 100 pF Rev A3 001026 1 16 2 15 3 14 4 13 5 12 6 11 7 10 8 9 22 pF 1 nF 3.3 µF 2 VCC 1/4 Wavelength Line; L=910 mil, W=20 mil RF OUT C7 3.3 pF L1 3.3 nH C8 100 pF PC C4 100 pF C19 3.3 µF 2-151 POWER AMPLIFIERS L=500 mil, W=20 mil RF2146 Evaluation Board Layout 2” x 2” POWER AMPLIFIERS 2 2-152 Rev A3 001026 RF2146 Gain vs. Pin Vcc=4.8 V, Vpc=3.6 V, 1.88 GHz ACPR @ 1.25 MHz Offset vs. Pout Vcc=4.8 V, Vpc=3.6 V, 1.88 GHz 30 -40 +25°C +25°C -30°C 25 -30°C -45 +85°C 15 10 2 -50 POWER AMPLIFIERS 20 ACPR (dBc) Gain (dB) +85°C -55 -60 5 -65 -10 -5 0 5 10 15 5 15 25 Gain vs. Pin Vpc=3.6 V, 1.88 GHz, +25°C ACPR @ 1.25 MHz Offset vs. Pout Vpc=3.6 V, 1.88 GHz, +25°C 30 -40 Vcc = 4.8 V Vcc = 4.8 V 25 -45 Vcc = 4.2 V Vcc = 4.2 V ACPR (dBc) 20 15 10 -50 -55 -60 5 -65 -10 -5 0 5 10 15 5 10 15 Pin (dBm) 20 25 30 Pout (dBm) Gain vs. Pin Vcc=4.8 V, Vpc=3.6 V, +25°C ACPR @ 1.25 MHz Offset vs. Pout Vcc=4.8 V, Vpc=3.6 V, +25°C 30 -40 1.88 GHz 1.88 GHz 1.91 GHz 25 1.91 GHz -45 1.85 GHz 1.85 GHz 20 ACPR (dBc) Gain (dB) 20 Pout (dBm) 30 Pout (dBm) 10 Pin (dBm) 15 10 -50 -55 -60 5 -65 -10 -5 0 5 Pin (dBm) Rev A3 001026 10 15 5 10 15 20 25 30 Pout (dBm) 2-153 RF2146 Pout vs. Pin Vcc=4.8 V, Vpc=3.6 V, 1.88 GHz Efficiency vs. Pout Vcc=4.8 V, Vpc=3.6 V, 1.88 GHz 30 50 +25°C +25°C -30°C 25 -30°C 40 Efficiency (%) +85°C 20 15 10 30 20 10 5 0 -10 -5 0 5 10 15 5 15 Pout vs. Pin Vpc=3.6 V, 1.88 GHz, +25°C Efficiency vs. Pout Vpc=3.6 V, 1.88 GHz, +25°C 25 30 25 30 25 30 50 Vcc = 4.8 V Vcc = 4.8 V 40 Vcc = 4.2 V Efficiency (%) Vcc = 4.2 V 20 15 10 30 20 10 5 0 -10 -5 0 5 10 15 5 10 15 Pin (dBm) 20 Pout (dBm) Pout vs. Pin Vcc=4.8 V, Vpc=3.6 V, +25°C Efficiency vs. Pout Vcc=4.8 V, Vpc=3.6 V, +25°C 30 50 1.88 GHz 1.88 GHz 1.91 GHz 25 1.91 GHz 40 1.85 GHz Efficiency (%) 1.85 GHz 20 15 10 30 20 10 5 0 -10 -5 0 5 Pin (dBm) 2-154 20 Pout (dBm) 25 Pout (dBm) 10 Pin (dBm) 30 Pout (dBm) POWER AMPLIFIERS 2 Pout (dBm) +85°C 10 15 5 10 15 20 Pout (dBm) Rev A3 001026