RF2152 2 DUAL-MODE CDMA/AMPS OR TDMA/AMPS 3V POWER AMPLIFIER Typical Applications • 3V JCDMA/TACS Cellular Handsets • CDPD Portable Data Cards • 3V TDMA/AMPS Cellular Handsets • Portable Battery-Powered Equipment D E R S F I 21 G 62 N /R S Product Description Optimum Technology Matching® Applied ! Si BJT Si Bi-CMOS GaAs HBT VCC 1 2 NC 3 N S O ee T LTUNE BIAS CIRCUITS Si CMOS EXPOSED HEATSINK .003 .001 1 .025 .197 .189 .244 .228 .102 .110 .062 .070 .059 .051 8 °MAX 0°MIN .030 .018 .009 .008 Refer to “Handling of PSOP and PSSOP Products” on page 16-15 for special handling information. Package Style: PSSOP-16 Features • Single 3V Supply 16 MODE • 28dBm Linear Output Power 15 NC • 30dB Linear Gain 14 RF OUT • 35% Linear Efficiency • On-board Power Down Mode VCC1 4 13 RF OUT GND1 5 12 RF OUT RF IN 6 11 NC VPD 7 10 NC VPD 8 9 NC PACKAGE BASE GND Functional Block Diagram Rev A8 001109 .012 .008 GaAs MESFET U F pg O ra R de d P SiGe HBT .157 .150 uc ts N E ro W d The RF2152 is a high-power, high-efficiency linear amplifier IC targeting 3V handheld systems. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in dual-mode 3V CDMA/AMPS handheld digital cellular equipment, spread-spectrum systems, and other applications in the 800MHz to 950MHz band. The device is self-contained with 50Ω input and the output can be easily matched to obtain optimum power, efficiency, and linearity characteristics. The package is a PSSOP-16 with backside ground. 2 • 800MHz to 960MHz Operation Ordering Information RF2152 Dual-Mode CDMA/AMPS or TDMA/AMPS 3V Power Amplifier RF2152 PCBA-N Fully Assembled Evaluation Board 824-849MHz RF2152 PCBA-J Fully Assembled Evaluation Board 877-924MHz RF Micro Devices, Inc. 7625 Thorndike Road Greensboro, NC 27409, USA Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com 2-155 POWER AMPLIFIERS • Spread-Spectrum Systems F2 19 2 • 3V CDMA/AMPS Cellular Handsets RF2152 Unit +8.0 +5.2 1.0 +3.0 +3.0 +12 -40 to +85 -40 to +150 JEDEC LEVEL 5 VDC VDC A VDC VDC dBm °C °C Refer to “Handling of PSOP and PSSOP Products” on page 16-15 for special handling information. Caution! ESD sensitive device. RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s). D E R S F I 21 G 62 N /R S Parameter Specification Min. Typ. Max. Unit Condition T=25°C, VCC =3.4V, VPD =2.8V, Freq=824MHz to 849MHz, unless otherwise specified Overall 800 Linear Gain Second Harmonic (including second harmonic trap) Max CW Output Power Total Efficiency (AMPS mode) Maximum Linear Output Power (CDMA Modulation) Total Linear Efficiency Adjacent Channel Power Rejection Adjacent Channel Power Rejection Input VSWR Output Load VSWR Noise Figure Noise Power POUT =15dBm POUT =28dBm POUT =31dBm 28 -32 824-849 877-925 30 -38 960 31 40 28 31.5 45 28.5 30 -44 35 -46 -56 -58 33 -42 MHz MHz MHz dB dBc 32 55 29 dBm % dBm Tuned for CDMA 38 -50 % dBc ACPR@885kHz -62 dBc ACPR@1980kHz dB dBm dBm dBm No oscillations VCC =3.4V VCC =3.4V; 30KHz BW; RX Band NP measured from TX center band to RX center band uc ts N E ro W d Usable Frequency Range Typical Frequency Range Pout=28dBm Tuned for CDMA U F pg O ra R de d P < 2:1 5.9 6.0 86.5 89.3 92.3 3.0 3.4 90 10:1 6.1 Power Supply Power Supply Voltage Idle current N S O ee T POWER AMPLIFIERS 2 Supply Voltage (RF off) Supply Voltage (POUT ≤31dBm) DC Supply Current Mode Voltage (VMODE) Control Voltage (VPD) Input RF Power Operating Ambient Temperature Storage Temperature Moisture Sensitivity Rating F2 19 2 Absolute Maximum Ratings Parameter Idle current VPD current Turn On/Off time Total Current (Power down) VPD “Low” Voltage VPD “High” Voltage MODE “High” Voltage MODE “Low” Voltage 2-156 2.7 2.1 5.2 V mA 200 mA 10 mA 0 2.8 2.8 0 <100 10 0.2 2.9 2.9 0.5 ns µA V V MODE = low Pin 16=Ground AMPS/Low Power CDMA Modes MODE = high Pin 16=2.8V High Power CDMA Mode (Pout>20dBm) Pins7,8, Vpd=2.8V (Pin 7 typ. not connected, I=5mA for Pin 8) VPD = low Rev A8 001109 RF2152 LTUNE 3 4 NC VCC1 5 GND1 6 RF IN Interface Schematic Power supply for input bias circuitry. A 100 pF high frequency bypass capacitor is recommended. Interstage tuning. This pin will connect to a shunt inductor used for interstage tuning. For 824MHz to 849MHz a 1.5nH discrete inductor is used; for 877MHz to 925MHz a shorted transmission line presenting 0.7 nH of inductance or discrete inductor may be used. This inductor should be placed as close to the pin as possible. No connection. Grounding pin is recommended. 2 Power supply for stage 1. VCC should be fed through a 25nH or greater inductor with a decoupling capacitor on the VCC side. See pin 6. Ground for stage 1. Keep traces physically short and connect immediately to ground plane for best performance. This ground should be isolated from the backside ground contact. RF input. An external DC blocking capacitor is required if this port is connected to a DC path to ground or a DC voltage. See pin 6. VCC1 RF IN VPD NC NC NC RF OUT RF OUT RF OUT 15 16 NC MODE N S O ee T 13 14 Pkg Base No connection. Grounding pin is recommended. uc ts 8 9 10 11 12 Power Down control. When this pin is “low”, all circuits are shut off. When this pin is 2.8 volts, all circuits are operating normally. VPD requires a regulated 2.8 V for the amplifier to operate properly over all specified temperature and voltage ranges. A dropping resistor from a higher regulated voltage may be used to provide the required 2.8 V. A 100 pF high frequency bypass capacitor is recommended. Connect to pin 7. N E ro W d VPD No connection. Grounding pin is recommended. No connection. Grounding pin is recommended. RF output and power supply for the output stage. The bias for the output stage is provided through this pin and pin 13. An external matching network is required to provide the optimum load impedance; see the application schematics for details. The first shunt cap of the matching circuit should be placed as close to the pin as possible. U F pg O ra R de d P 7 GND Rev A8 001109 From Bias GND1 Stages RF OUT From Bias Stages Same as pin 12. See pin 12. Harmonic trap. This pin connects to the RF output but is used for providing a low impedance to the second harmonic of the operating frequency. An inductor or transmission line resonating with a shunt capacitor at 2f0 is connected to this pin. See pin 12. No connection. Grounding pin is recommended. The mode pin allows higher efficiency operation in AMPS and low power CDMA modes. MODE should be set “low” for highest efficiency in AMPS/TACS and in low power (<+15 dBm) CDMA operation. MODE should be set “high” for best linearity in high power CDMA operation. MODE Ground connection. The backside of the package should be soldered to a top side ground pad which is connected to the ground plane with multiple vias. The pad should have a short thermal path to the ground plane. 2-157 POWER AMPLIFIERS 2 Description F2 19 2 Function VCC D E R S F I 21 G 62 N /R S Pin 1 RF2152 Application Schematic 824MHz to 849MHz VCC 100 pF 100 pF 20 nH 100 pF 1 100 pF 2 MODE 16 D E R S F I 21 G 62 N /R S 1.2 nH BIAS CIRCUITS 15 2 pF 1 nH 3 47 nH 4 14 13 2.7 nH 5 100 pF RF IN 6 7 8 R3 11 10 9 PACKAGE BASE uc ts 9 pF RF OUT 7 pF ·L6 may be implemented as a transmission line to reduce DC losses. ·R3 is used for bias adjustment. 0 Ω for 2.8 V regulated supply. ·All unused pins should be grounded to PC board if possible. N S O ee T U F pg O ra R de d P 100 pF 100 pF 12 N E ro W d VPD F2 19 2 POWER AMPLIFIERS 2 2-158 Rev A8 001109 RF2152 Application Schematic 877MHz to 924MHz VCC 2 100 pF 1 100 pF 0.7 nH 2 D E R S F I 21 G 62 N /R S 100 pF MODE 16 BIAS CIRCUITS 15 2 pF 1 nH 3 47 nH 4 F2 19 2 20 nH 14 13 2.2 nH 5 100 pF RF IN 6 R3 VPD 7 8 11 10 9 uc ts N E ro W d 100 pF 100 pF RF OUT 12 6 pF ·L6 may be implemented as a transmission line to reduce DC losses. ·R3 is used for bias adjustment. 0 Ω for 2.8 V regulated supply. ·All unused pins should be grounded to PC board if possible. N S O ee T U F pg O ra R de d P PACKAGE BASE 8 pF Rev A8 001109 2-159 POWER AMPLIFIERS 100 pF RF2152 Evaluation Board Schematic 824MHz to 849MHz (Download Bill of Materials from www.rfmd.com.) VCC 2 C4 100 pF 2152400A C2 100 pF L1 47 nH 16 BIAS CIRCUITS 2 L2 1.2 nH 3 15 C12 1 pF MODE C13 1 pF 1 nH 13 5 50 Ω 6 C6 100 pF 11 7 10 uc ts N E ro W d 9 R4 OPEN VPD C7 3.3 µF 425 mil 50 Ω RF OUT 12 8 C8 100 pF R2 0Ω 14 4 RF IN C14 3.3 µF D E R S F I 21 G 62 N /R S 1 C3 100 pF C15 100 pF 20 nH F2 19 2 POWER AMPLIFIERS C1 3.3 µF C9 9 pF C10 7 pF C11 100 pF ·The position of C10 can be used to trade-off efficiency and linearity. ·R3 and R4 may be used for bias adjustment. PACKAGE BASE R3 0Ω P1 P1-1 P1-3 1 VCC 2 GND 3 PD N S O ee T U F pg O ra R de d P (PCB mat'l: FR-4; Four Layer: 31 mil; 9 mil core) 2-160 Rev A8 001109 RF2152 Evaluation Board Schematic 877MHz to 924MHz VCC 2 0.7 nH 3 L1 47 nH MODE 16 BIAS CIRCUITS R2 0Ω 15 14 1 nH 4 C2 100 pF C6 100 pF 5 6 50 Ω R4 OPEN VPD C7 3.3 µF R3 0Ω 7 8 13 C13 1 pF 375 mil 50 Ω C9 8 pF 11 10 9 uc ts C10 6 pF RF OUT C11 100 pF ·The position of C10 can be used to trade-off efficiency and linearity. ·R3 and R4 may be used for bias adjustment. PACKAGE BASE P1 P1-1 P1-3 1 VCC 2 GND 3 PD N S O ee T U F pg O ra R de d P (PCB mat'l: FR-4; Four Layer: 31 mil; 9 mil core) C12 1 pF 12 N E ro W d C8 100 pF C14 3.3 µF D E R S F I 21 G 62 N /R S 1 C15 100 pF 20 nH F2 19 2 2152401- C3 100 pF RF IN C4 100 pF Rev A8 001109 2-161 2 POWER AMPLIFIERS C1 3.3 µF RF2152 Evaluation Board Layout 824MHz to 849MHz 1” x 1” Board Thickness 0.034”, Board Material FR-4, Multi-Layer N S O ee T U F pg O ra R de d P uc ts N E ro W d D E R S F I 21 G 62 N /R S F2 19 2 POWER AMPLIFIERS 2 2-162 Rev A8 001109 U F pg O ra R de d P N S O ee T uc ts N E ro W d Rev A8 001109 2-163 POWER AMPLIFIERS F2 19 2 D E R S F I 21 G 62 N /R S RF2152 Evaluation Board Layout 877MHz to 924MHz 1” x 1” 2 RF2152 -40.0 ACPR (@885 kHz offset) versus Frequency VCC = 3.5 V, VREG = 2.8 V, CDMA POUT = 28 dBm -52.0 Lower -30 C Upper -30 C Lower + 25 C Upper +25 C Lower +85 C -41.0 -42.0 ACPR (@1980 kHz offset) versus Frequency VCC = 3.5 V, VREG = 2.8 V, CDMA POUT = 28 dBm Lower -30 C Upper -30 C Lower +25 C Upper +25 C Lower +85 C -54.0 -56.0 -45.0 -46.0 -58.0 -60.0 F2 19 2 ACPR (dBc) -44.0 D E R S F I 21 G 62 N /R S -62.0 -47.0 -64.0 -48.0 -66.0 -49.0 -50.0 820.0 -68.0 825.0 830.0 835.0 840.0 845.0 850.0 855.0 Frequency (MHz) 34.0 820.0 825.0 830.0 835.0 840.0 845.0 850.0 855.0 Frequency (MHz) Gain versus Frequency VCC = 3.5 V, VREG = 2.8 V, CDMA POUT = 28 dBm 40.0 -30 C +25 C 33.5 +85 C 33.0 PAE versus Frequency VCC = 3.5 V, VPD = 2.8 V, CDMA POUT = 28 dBm 39.0 38.0 -30 C +25 C +85 C 37.0 PAE (%) 32.0 31.5 31.0 820.0 U F pg O ra R de d P 30.5 30.0 36.0 uc ts N E ro W d Gain (dB) 32.5 825.0 830.0 835.0 840.0 845.0 850.0 35.0 34.0 33.0 32.0 31.0 30.0 820.0 855.0 825.0 830.0 Frequency (MHz) -42.0 -43.0 -54.0 Lower -30 C Upper -30 C Lower +25 C Upper +25 C Lower +85 C -44.0 840.0 845.0 850.0 855.0 ACPR (@1908 kHz offset) versus Frequency VCC = 3.0 V, VREG = 2.8 V, CDMA POUT = 27 dBm Lower -30 C Upper -30 C Lower +25 C Upper +25 C Lower +85 C -56.0 -58.0 ACPR (dBc) -41.0 835.0 Frequency (MHz) ACPR (@885 kHz offset) versus Frequency VCC = 3.0 V, VREG = 2.8 V, CDMA POUT = 27 dBm N S O ee T -40.0 ACPR (dBc) POWER AMPLIFIERS 2 ACPR (dBc) -43.0 -60.0 -45.0 -62.0 -46.0 -64.0 -47.0 -48.0 820.0 -66.0 825.0 830.0 835.0 840.0 Frequency (MHz) 2-164 845.0 850.0 855.0 820.0 825.0 830.0 835.0 840.0 845.0 850.0 855.0 Frequency (MHz) Rev A8 001109 RF2152 34.0 Gain versus Frequency VCC = 3.0 V, VREG = 2.8 V, CDMA POUT = 27 dBm 42.0 PAE versus Frequency VCC = 3.0 V, VREG = 2.8 V, CDMA POUT = 27 dBm -30 C -30 C 41.0 +25 C 33.5 +85 C +25 C +85 C 40.0 33.0 39.0 37.0 F2 19 2 32.0 36.0 31.5 D E R S F I 21 G 62 N /R S 35.0 31.0 34.0 30.5 33.0 30.0 32.0 825.0 830.0 835.0 840.0 845.0 850.0 855.0 Frequency (MHz) -44.0 ACPR (@885 kHz offset) versus Frequency VCC = 5.0 V, VREG = 2.8 V, CDMA POUT = 28 dBm -52.0 Lower -30 C Upper -30 C Lower +25 C Upper +25 C Lower +85 C 830.0 840.0 845.0 -49.0 -50.0 U F pg O ra R de d P -51.0 ACPR (@1908 kHz offset) versus Frequency VCC = 5.0 V, VREG = 2.8 V, CDMA POUT = 28 dBm 825.0 830.0 835.0 840.0 845.0 850.0 -56.0 -57.0 -58.0 -59.0 -60.0 855.0 820.0 825.0 830.0 835.0 840.0 845.0 Gain versus Frequency VCC = 5.0 V, VREG = 2.8 V, CDMA POUT = 28 dBm N S O ee T 30.0 855.0 PAE versus Frequency VCC = 5.0 V, VREG = 2.8V, CDMA POUT = 27 dBm -30 C 29.0 +25 C +85 C +25 C +85 C 28.0 27.0 26.0 PAE (%) Gain (dB) 850.0 Frequency (MHz) -30 C 31.5 Lower -30 C Upper -30 C Lower +25 C Upper +25 C Lower +85 C -55.0 Frequency (MHz) 32.0 855.0 uc ts -48.0 32.5 850.0 -54.0 -47.0 33.0 835.0 -53.0 N E ro W d ACPR (dBc) -46.0 820.0 825.0 Frequency (MHz) -45.0 -52.0 820.0 ACPR (dBc) 820.0 31.0 25.0 24.0 30.5 23.0 30.0 22.0 29.5 21.0 29.0 820.0 20.0 825.0 830.0 835.0 840.0 Frequency (MHz) Rev A8 001109 845.0 850.0 855.0 820.0 825.0 830.0 835.0 840.0 845.0 850.0 855.0 Frequency (MHz) 2-165 POWER AMPLIFIERS 2 38.0 PAE (%) Gain (dB) 32.5 RF2152 65.0 AMPS Mode VCC = 3.0 V, VREG = 2.8 V, POUT = 30.5 dBm AMPS Mode VCC = 3.5 V, VREG = 2.8 V, POUT = 31.5 dBm 55.0 60.0 50.0 55.0 T=-30 PAE T=25 PAE T=85 PAE T=-30 Gain T=25 Gain 40.0 35.0 40.0 T=25 PAE T=85 PAE T=-30 PAE T=-30 Gain T=25 Gain 35.0 F2 19 2 Gain (dB)/PAE (%) 45.0 D E R S F I 21 G 62 N /R S 30.0 30.0 25.0 25.0 20.0 20.0 825.0 830.0 835.0 840.0 845.0 850.0 855.0 Frequency (MHz) 40.0 AMPS Mode VCC = 5.0 V, VREG = 2.8 V, POUT = 31.5 dBm T=85 PAE T=25 PAE T=-30 PAE T=-30 Gain T=25 Gain 830.0 835.0 840.0 845.0 850.0 32.4 50.0 32.2 GAIN 45.0 PAE 40.0 31.8 35.0 31.6 30.0 31.4 25.0 31.2 20.0 31.0 15.0 30.8 10.0 30.6 5.0 Gain (dB) uc ts N E ro W d 34.0 32.0 30.0 U F pg O ra R de d P 28.0 825.0 830.0 835.0 840.0 845.0 850.0 855.0 30.4 0.0 0.0 5.0 10.0 15.0 20.0 25.0 30.0 POUT (dBm) N S O ee T Frequency (MHz) 855.0 Gain/PAE versus POUT VCC = 3.5 V, VREG = 2.8 V, Freq = 836 MHz 32.0 36.0 820.0 825.0 Frequency (MHz) 38.0 26.0 820.0 PAE (%) 820.0 Gain (dB)/PAE (%) POWER AMPLIFIERS 2 Gain (dB)/PAE (%) 45.0 50.0 2-166 Rev A8 001109