RFMD RF2045

RF2045
Preliminary
4
GENERAL PURPOSE AMPLIFIER
Typical Applications
• Broadband, Low Noise Gain Blocks
• Final PA for Low Power Applications
• IF or RF Buffer Amplifiers
• High Reliability Applications
• Driver Stage for Power Amplifiers
• Broadband Test Equipment
Product Description
The RF2045 is a general purpose, low cost RF amplifier
IC. The device is manufactured on an advanced Gallium
Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50Ω gain block. Applications include IF and RF
amplification in wireless voice and data communication
products operating in frequency bands up to 6000MHz.
The device is self-contained with 50Ω input and output
impedances and requires only two external DC biasing
elements to operate as specified. With a goal of
enhanced reliability, the extremely small Micro-X ceramic
package offers significantly lower thermal resistance than
similar size plastic packages.
Optimum Technology Matching® Applied
Si BJT
Si Bi-CMOS
ü
GaAs HBT
GaAs MESFET
SiGe HBT
Si CMOS
45°
+ 1°
0.055
+ 0.005
0.020
+ 0.002
0.040
+ 0.002
0.070
sq.
0.200 sq.
Typ
NOTES:
1. Shaded lead is pin 1.
2. Darkened areas are metallization.
Package Style: Micro-X Ceramic
Features
• DC to 6000MHz Operation
• Internally matched Input and Output
• 13dB Small Signal Gain
• +32dBm Output IP3
GND
4
MARKING - C5
• +18dBm Output Power
• Excellent Gain Flatness
RF IN 1
3 RF OUT
Ordering Information
2
GND
Functional Block Diagram
Rev A5 010110
RF2045
RF2045 PCBA
General Purpose Amplifier
Fully Assembled Evaluation Board
RF Micro Devices, Inc.
7625 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
4-13
GENERAL PURPOSE
AMPLIFIERS
4
RF2045
Preliminary
Absolute Maximum Ratings
Parameter
Supply Current
Input RF Power
Operating Ambient Temperature
Storage Temperature
Parameter
Rating
Unit
120
+20
-40 to +85
-60 to +150
mA
dBm
°C
°C
Specification
Min.
Typ.
Max.
Caution! ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
Unit
Overall
GENERAL PURPOSE
AMPLIFIERS
4
Condition
T=25 °C, ICC =65mA
Frequency Range
3dB Bandwidth
Gain
11
Gain Flatness
Noise Figure
Input VSWR
Output VSWR
Output IP3
Output P1dB
Reverse Isolation
DC to 6000
6
13.8
13.7
13.6
13.4
13
±0.2
5.0
1.7:1
1.7:1
+33
+17.8
18.4
MHz
GHz
dB
dB
dB
dB
dB
dB
dBm
dBm
dB
Thermal
1.5x103
°C/W
°C
years
TAMB =+85°C
Mean Time Between Failures
3.7x105
years
TAMB =+25°C
Mean Time Between Failures
9
years
TAMB =-40°C
ThetaJC
Maximum junction temperature
Mean Time Between Failures
173
142
Freq=100MHz
Freq=1000MHz
Freq=2000MHz
Freq=3000MHz
Freq=4000MHz
100MHz to 2000MHz
Freq=1000MHz
In a 50Ω system, DC to 4000MHz
In a 50Ω system, DC to 4000MHz
Freq=1000MHz±50kHz, PTONE =-10dBm
Freq=1000MHz
Freq=2000MHz
ICC =65mA, PDISS =310mW
2.0x10
Power Supply
Device Operating Voltage
Operating Current
4-14
4.6
5.0
65
5.6
V
mA
With 22Ω bias resistor
At pin 3 with ICC =65mA
Rev A5 010110
RF2045
Preliminary
Function
RF IN
2
GND
3
RF OUT
Description
Interface Schematic
RF input pin. This pin is NOT internally DC blocked. A DC blocking
capacitor, suitable for the frequency of operation, should be used in
most applications. DC coupling of the input is not allowed, because this
will override the internal feedback loop and cause temperature instability.
Ground connection. Keep traces physically short and connect immediately to ground plane for best performance.
RF output and bias pin. Biasing is accomplished with an external series
resistor and choke inductor to VCC. The resistor is selected to set the
DC current into this pin to a desired level. The resistor value is determined by the following equation:
( V SUPPLY – V DEVICE )
R = ------------------------------------------------------I CC
4
GND
RF OUT
4
RF IN
GENERAL PURPOSE
AMPLIFIERS
Pin
1
Care should also be taken in the resistor selection to ensure that the
current into the part never exceeds 120mA over the planned operating temperature. This means that a resistor between the supply and
this pin is always required, even if a supply near 5.0V is available, to
provide DC feedback to prevent thermal runaway. Because DC is
present on this pin, a DC blocking capacitor, suitable for the frequency
of operation, should be used in most applications. The supply side of
the bias network should also be well bypassed.
Same as pin 2.
Application Schematic
VCC
10 nF
47 nH
4
RBIAS
22 pF
RF IN
22 pF
1
3
RF OUT
22 pF
2
Rev A5 010110
4-15
RF2045
Preliminary
Evaluation Board Schematic
(Download Bill of Materials from www.rfmd.com.)
P1
P1-1
NC
1
VCC
2
GND
Drawing 204X400-
VCC
P1-1
3
R1
22Ω
4
RF IN
J1
GENERAL PURPOSE
AMPLIFIERS
4
50Ω µstrip
L1
100 nH
C1
100 pF
1
3
C2
100 pF
C3
100 pF
C4
1 µF
50Ω µstrip
RF OUT
J2
2
Evaluation Board Layout
Board Size 1.195" x 1.000"
4-16
Rev A5 010110
RF2045
Preliminary
Gain versus Frequency Across Temperature
ICC = 65 mA
15.00
19.00
Output P1dB versus Frequency Across Temperature
ICC = 65 mA
-40 C
- 40 C
26 C
26 C
18.00
85 C
85 C
Gain (dB)
14.00
13.00
16.00
15.00
14.00
4
13.00
12.00
12.00
0.10
0.69
1.28
1.87
2.46
3.05
3.64
4.23
4.82
5.41
11.00
0.10
6.00
0.69
1.28
1.87
Frequency (GHz)
Output IP3 versus Frequency Across Temperature
ICC = 65 mA
34.00
-40 C
33.00
26 C
32.00
85 C
10.00
3.05
3.64
4.23
4.82
5.41
6.00
Noise Figure versus Frequency Across Temperature
ICC = 65 mA
-40 C
26 C
9.00
85 C
8.00
31.00
30.00
Noise Figure (dB)
3rd Order Intercept Power (dBm)
35.00
2.46
Frequency (GHz)
29.00
28.00
27.00
26.00
25.00
24.00
7.00
6.00
5.00
4.00
23.00
22.00
3.00
21.00
20.00
0.10
0.69
1.28
1.87
2.46
3.05
3.64
4.23
4.82
5.41
2.00
0.10
6.00
0.69
1.28
1.87
Frequency (GHz)
Input VSWR versus Frequency Across Temperature
ICC = 65 mA
2.00
0.69
1.28
1.87
2.46
3.05
3.64
Frequency (GHz)
Rev A5 010110
3.64
4.23
4.82
5.41
6.00
4.23
4.82
Output VSWR versus Frequency Across Temperature
ICC = 65 mA
-40 C
26 C
26 C
85 C
85 C
1.50
1.00
0.10
3.05
-40 C
VSWR
VSWR
2.00
2.46
Frequency (GHz)
5.41
6.00
1.50
1.00
0.10
0.69
1.28
1.87
2.46
3.05
3.64
4.23
4.82
5.41
6.00
Frequency (GHz)
4-17
GENERAL PURPOSE
AMPLIFIERS
Output Power (dBm)
17.00
RF2045
20.00
Preliminary
Reverse Isolation versus Frequency Across
Temperature, ICC = 65 mA
-40 C
26 C
85 C
Reverse Isolation (dB)
19.00
4
18.00
17.00
GENERAL PURPOSE
AMPLIFIERS
16.00
15.00
0.10
0.69
1.28
1.87
2.46
3.05
3.64
4.23
4.82
5.41
6.00
Frequency (GHz)
4-18
Rev A5 010110