FMN1 / FMP1 / IMN10 / IMN11 / IMP11 / UMN1N / UMP1N / UMN11N / UMP11N Diodes Switching diode FMN1 / FMP1 / IMN10 / IMN11 / IMP11 UMN1N / UMP1N / UMN11N / UMP11N !External dimensions (Units : mm) FMN1 / FMP1 UMN1N / UMP1N 0.15 +0.1 −0.06 (All leads have the same dimensions.) 0.3∼0.6 +0.1 ∗Marking FMN1 : N1 FMP1 : P1 ROHM : SMD5 EIAJ : SC-74A JEDEC : − IMN10 / IMN11 / IMP11 ∗ +0.2 −0.1 2.8±0.2 +0.1 −0.06 (All leads have the same dimensions.) 0.3∼0.6 +0.2 1.6 −0.1 0∼0.1 0.15 ROHM : SMD6 EIAJ : SC-74 JEDEC : SOT-457 ∗Marking UMN1N : N1 UMP1N : P1 ROHM : UMD5 EIAJ : SC-88A JEDEC : SOT-353 2.0±0.2 0.8±0.1 0.95 0.95 +0.1 0.15±0.05 (All leads have the same dimensions.) ∗Marking IMN10 : N10 IMN11 : N11 IMP11 : P11 1.3±0.1 0.9±0.1 0.65 0.65 0.7 ∗ 1.25±0.1 1.1 1.9±0.2 0.3 −0.05 +0.1 0.2 −0.05 FMP1 IMN10 0.15±0.05 ROHM : UMD6 EIAJ : SC-88 JEDEC : SOT-363 IMN11 IMP11 UMN11N UMP11N SMD5 / SMD6 Package UMN1N UMP1N UMD5 / UMD6 Package 0∼0.1 (All leads have the same dimensions.) !Circuit FMN1 0∼0.1 UMN11N / UMP11N 2.9±0.2 ∗ 0.7 +0.1 0.2 −0.05 0.3 −0.05 !Construction Silicon epitaxial planar 0.9±0.1 0.1Min. +0.2 0∼0.1 1.3±0.1 0.65 0.65 0.1Min. 2.8±0.2 ∗ 1.6 −0.1 !Features 1) A wide variety of configurations are available. (UMD5, UMD6, SMD5, SMD6) 2) Multiple diodes in one small surface mount package. 3) Diode characteristics are matched in the package. 2.0±0.2 0.8±0.1 0.95 0.95 1.25±0.1 1.1 1.9±0.2 +0.2 −0.1 2.1±0.1 2.9±0.2 2.1±0.1 !Applications Ultra high speed switching ∗Marking UMN11N : N11 UMP11N : P11 FMN1 / FMP1 / IMN10 / IMN11 / IMP11 / UMN1N / UMP1N / UMN11N / UMP11N Diodes !Absolute maximum ratings (Ta=25°C) Power Surge Storage Junction dissipation current temperature temperature (1µs) (TOTAL) Tstg (˚C) Tj (˚C) Isurge (A) Pd (mW) Type Peak reverse voltage VRM (V) DC reverse voltage VR (V) Peak forward current IFM (mA) Mean rectifying current IO (mA) FMN1 UMN1N 80 80 80 25 0.25 150/80 150 −55∼+150 FMP1 UMP1N 80 80 80 25 0.25 150/80 150 −55∼+150 IMN10 80 80 300 100 4 300 ∗1 150 −55∼+150 ∗2 150 −55∼+150 150 −55∼+150 IMN11 UMN11N 80 80 300 100 4 150 IMP11 UMP11N 80 80 300 100 4 150 ∗2 ∗1 Not to exceed 200mW per element. ∗2 Not to exceed 120mW per element. !Electrical characteristics (Ta=25°C) Forward voltage Reverse current Cond. IF (mA) IR (µA) Max. Cond. Type VF (V) Max. Capacitance between terminals CT (pF) Max. Cond. Reverse recovery time Cond. trr (ns) Max. VR (V) f (MHz) 3.5 6 1 4 6 5 70 3.5 6 1 4 6 5 0.1 70 3.5 6 1 4 6 5 100 0.1 70 3.5 6 1 4 6 5 100 0.1 70 3.5 6 1 4 6 5 VR (V) FMN1 UMN1N 0.9 5 0.1 70 FMP1 UMP1N 0.9 5 0.1 IMN10 1.2 100 IMN11 UMN11N 1.2 IMP11 UMP11N 1.2 VR (V) IF (mA) !Electrical characteristic curves (Ta=25°C) 50 1 000 75 50 25 20 10 5 2 1 0.5 0.2 0 0 25 50 75 100 125 150 0.1 0 Ta=25˚C 85˚C 50˚C 0˚C −30˚C 100 0.2 0.4 0.6 0.8 1.0 1.2 AMBIENT TEMPERATURE : Ta (˚C) FORWARD VOLTAGE : VF (V) Fig.1 Power reduction curve Fig. 2 Forward current vs. forward voltage (P Type) REVERSE CURRENT : IR (nA) Ta=100˚C FORWARD CURRENT : IF (mA) POWER DISSIPATION : Pd / PdMax. (%) 125 75˚C 100 50˚C 10 25˚C 0˚C 1.0 −25˚C 0.1 0.01 0 10 20 30 40 REVERSE VOLTAGE : VR (V) Fig.3 Reverse current vs. reverse voltage (P Type) 50 FMN1 / FMP1 / IMN10 / IMN11 / IMP11 / UMN1N / UMP1N / UMN11N / UMP11N Diodes CAPACITANCE BETWEEN TERMINALS : CT (pF) 1 000 50 REVERSE CURRENT : IR (nA) 10 5 2 1 0.5 Ta=25˚C 85˚C 50˚C 0˚C −30˚C 0.2 0.1 0 75˚C 100 50˚C 25˚C 10 0˚C 1.0 −25˚C 0.1 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 FORWARD VOLTAGE : VF (V) 10 20 40 50 2 P Type N Type 0 0 0.01µF 4 6 5kΩ 7 PULSE GENERATOR OUTPUT 50Ω 6 50Ω SAMPLING OSCILLOSCOPE 5 4 pe P Ty 3 INPUT 2 N Type 1 0 0 1 2 3 4 5 6 7 8 9 10 FORWARD CURRENT : IF (mA) 100ns Fig.7 Reverse recovery time vs. forward current OUTPUT trr 0 IR 8 10 12 14 16 Fig.6 Capacitance between terminals vs. reverse voltage D.U.T. Ta=25˚C VR=6V 8 2 REVERSE VOLTAGE : VR (V) Fig.5 Reverse current vs. reverse voltage (N Type) 10 9 4 REVERSE VOLTAGE : VR (V) Fig.4 Forward current vs. forward voltage (N Type) REVERSE RECOVERY TIME : trr (ns) 30 Ta=25˚C f=1MHz 0.1IR FORWARD CURRENT : IF (mA) Ta=100˚C 20 Fig.8 Reverse recovery time (trr) measurement circuit