ROHM UMP11N

FMN1 / FMP1 / IMN10 / IMN11 / IMP11 /
UMN1N / UMP1N / UMN11N / UMP11N
Diodes
Switching diode
FMN1 / FMP1 / IMN10 / IMN11 / IMP11
UMN1N / UMP1N / UMN11N / UMP11N
!External dimensions (Units : mm)
FMN1 / FMP1
UMN1N / UMP1N
0.15
+0.1
−0.06
(All leads have the same dimensions.)
0.3∼0.6
+0.1
∗Marking
FMN1 : N1
FMP1 : P1
ROHM : SMD5
EIAJ : SC-74A
JEDEC : −
IMN10 / IMN11 / IMP11
∗
+0.2
−0.1
2.8±0.2
+0.1
−0.06
(All leads have the same dimensions.)
0.3∼0.6
+0.2
1.6 −0.1
0∼0.1
0.15
ROHM : SMD6
EIAJ : SC-74
JEDEC : SOT-457
∗Marking
UMN1N : N1
UMP1N : P1
ROHM : UMD5
EIAJ : SC-88A
JEDEC : SOT-353
2.0±0.2
0.8±0.1
0.95 0.95
+0.1
0.15±0.05
(All leads have the same dimensions.)
∗Marking
IMN10 : N10
IMN11 : N11
IMP11 : P11
1.3±0.1
0.9±0.1
0.65 0.65
0.7
∗
1.25±0.1
1.1
1.9±0.2
0.3 −0.05
+0.1
0.2 −0.05
FMP1
IMN10
0.15±0.05
ROHM : UMD6
EIAJ : SC-88
JEDEC : SOT-363
IMN11
IMP11
UMN11N
UMP11N
SMD5 / SMD6 Package
UMN1N
UMP1N
UMD5 / UMD6 Package
0∼0.1
(All leads have the same dimensions.)
!Circuit
FMN1
0∼0.1
UMN11N / UMP11N
2.9±0.2
∗
0.7
+0.1
0.2 −0.05
0.3 −0.05
!Construction
Silicon epitaxial planar
0.9±0.1
0.1Min.
+0.2
0∼0.1
1.3±0.1
0.65 0.65
0.1Min.
2.8±0.2
∗
1.6 −0.1
!Features
1) A wide variety of configurations are available.
(UMD5, UMD6, SMD5, SMD6)
2) Multiple diodes in one small surface mount package.
3) Diode characteristics are matched in the package.
2.0±0.2
0.8±0.1
0.95 0.95
1.25±0.1
1.1
1.9±0.2
+0.2
−0.1
2.1±0.1
2.9±0.2
2.1±0.1
!Applications
Ultra high speed switching
∗Marking
UMN11N : N11
UMP11N : P11
FMN1 / FMP1 / IMN10 / IMN11 / IMP11 /
UMN1N / UMP1N / UMN11N / UMP11N
Diodes
!Absolute maximum ratings (Ta=25°C)
Power
Surge
Storage
Junction
dissipation
current
temperature temperature
(1µs)
(TOTAL)
Tstg (˚C)
Tj (˚C)
Isurge (A)
Pd (mW)
Type
Peak
reverse
voltage
VRM (V)
DC
reverse
voltage
VR (V)
Peak
forward
current
IFM (mA)
Mean
rectifying
current
IO (mA)
FMN1
UMN1N
80
80
80
25
0.25
150/80
150
−55∼+150
FMP1
UMP1N
80
80
80
25
0.25
150/80
150
−55∼+150
IMN10
80
80
300
100
4
300 ∗1
150
−55∼+150
∗2
150
−55∼+150
150
−55∼+150
IMN11
UMN11N
80
80
300
100
4
150
IMP11
UMP11N
80
80
300
100
4
150 ∗2
∗1 Not to exceed 200mW per element.
∗2 Not to exceed 120mW per element.
!Electrical characteristics (Ta=25°C)
Forward voltage
Reverse current
Cond.
IF (mA)
IR (µA)
Max.
Cond.
Type
VF (V)
Max.
Capacitance between terminals
CT (pF)
Max.
Cond.
Reverse recovery time
Cond.
trr (ns)
Max.
VR (V)
f (MHz)
3.5
6
1
4
6
5
70
3.5
6
1
4
6
5
0.1
70
3.5
6
1
4
6
5
100
0.1
70
3.5
6
1
4
6
5
100
0.1
70
3.5
6
1
4
6
5
VR (V)
FMN1
UMN1N
0.9
5
0.1
70
FMP1
UMP1N
0.9
5
0.1
IMN10
1.2
100
IMN11
UMN11N
1.2
IMP11
UMP11N
1.2
VR (V)
IF (mA)
!Electrical characteristic curves (Ta=25°C)
50
1 000
75
50
25
20
10
5
2
1
0.5
0.2
0
0
25
50
75
100
125
150
0.1
0
Ta=25˚C
85˚C
50˚C
0˚C
−30˚C
100
0.2 0.4 0.6 0.8 1.0 1.2
AMBIENT TEMPERATURE : Ta (˚C)
FORWARD VOLTAGE : VF (V)
Fig.1 Power reduction curve
Fig. 2 Forward current vs.
forward voltage
(P Type)
REVERSE CURRENT : IR (nA)
Ta=100˚C
FORWARD CURRENT : IF (mA)
POWER DISSIPATION : Pd / PdMax. (%)
125
75˚C
100
50˚C
10
25˚C
0˚C
1.0
−25˚C
0.1
0.01
0
10
20
30
40
REVERSE VOLTAGE : VR (V)
Fig.3 Reverse current vs.
reverse voltage
(P Type)
50
FMN1 / FMP1 / IMN10 / IMN11 / IMP11 /
UMN1N / UMP1N / UMN11N / UMP11N
Diodes
CAPACITANCE BETWEEN TERMINALS : CT (pF)
1 000
50
REVERSE CURRENT : IR (nA)
10
5
2
1
0.5
Ta=25˚C
85˚C
50˚C
0˚C
−30˚C
0.2
0.1
0
75˚C
100
50˚C
25˚C
10
0˚C
1.0
−25˚C
0.1
0.01
0
0.2 0.4 0.6 0.8 1.0 1.2
FORWARD VOLTAGE : VF (V)
10
20
40
50
2
P Type
N Type
0
0
0.01µF
4
6
5kΩ
7
PULSE GENERATOR
OUTPUT 50Ω
6
50Ω
SAMPLING
OSCILLOSCOPE
5
4
pe
P Ty
3
INPUT
2
N Type
1
0
0
1
2
3
4
5
6
7
8
9
10
FORWARD CURRENT : IF (mA)
100ns
Fig.7 Reverse recovery time vs.
forward current
OUTPUT
trr
0
IR
8
10 12 14 16
Fig.6 Capacitance between
terminals vs.
reverse voltage
D.U.T.
Ta=25˚C
VR=6V
8
2
REVERSE VOLTAGE : VR (V)
Fig.5 Reverse current vs.
reverse voltage
(N Type)
10
9
4
REVERSE VOLTAGE : VR (V)
Fig.4 Forward current vs.
forward voltage
(N Type)
REVERSE RECOVERY TIME : trr (ns)
30
Ta=25˚C
f=1MHz
0.1IR
FORWARD CURRENT : IF (mA)
Ta=100˚C
20
Fig.8 Reverse recovery time (trr) measurement circuit