S T U/D20N03L S amHop Microelectronics C orp. J uly 23 ,2004 V er1.1 N-C hannel Logic Level E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS (ON) ( mW) S uper high dense cell design for low R DS (ON ). Max R ugged and reliable. 23 @ V G S = 10V 30V TO-252 and TO-251 P ackage. 28A 39 @ V G S = 4.5V D D G D G S S TU S E R IE S TO-252AA(D-P AK) S G S TD S E R IE S TO-251(l-P AK) S ABS OLUTE MAXIMUM R ATINGS (T C =25 C unless otherwise noted) S ymbol P arameter Limit Unit Drain-S ource Voltage V DS 30 V Gate-S ource Voltage V GS 20 V ID 28 A IDM 70 A Drain-S ource Diode Forward C urrent IS 20 A Maximum P ower Dissipation @ Tc=25 C PD 50 W Operating and S torage Temperature R ange T J , T S TG -55 to 175 C Drain C urrent-C ontinuous -P ulsed @ TJ=125 C a THE R MAL C HAR AC TE R IS TIC S Thermal R esistance, Junction-to-C ase R JC 3 C /W Thermal R esistance, Junction-to-Ambient R JA 50 C /W 1 STU/D20N03L ELECTRICAL CHARACTERISTICS (TC=25 C unless otherwise noted) Parameter Min Typ Max Unit Symbol Condition Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250uA Zero Gate Voltage Drain Current IDSS VDS = 24V, VGS = 0V 1 uA Gate-Body Leakage IGSS VGS = 20V, VDS = 0V 100 nA Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250uA 1.5 2.5 V Drain-Source On-State Resistance RDS(ON) VGS = 10V, ID =20A 17 23 m ohm VGS = 4.5V, ID = 10A 30 39 m ohm On-State Drain Current ID(ON) gFS OFF CHARACTERISTICS ON CHARACTERISTICS DYNAMIC CHARACTERISTICS CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS Turn-Off Delay Time VDS = 10V, VGS = 10V 1 50 A 8 S 614 PF 83 PF 61 PF 15.2 ns 4.5 ns 23.3 ns 12.7 ns VDD = 15V,ID = 1A,VGS =10V 17.8 nC VDS = 15V,ID = 1A,VGS =4.5V 8.8 nC VDD = 15V, ID = 1A RL=15 ohm 2.8 nC nC VDS = 10V, ID = 20A b Input Capacitance Rise Time V a Forward Transconductance Turn-On Delay Time 30 VDs =25V, VGS = 0V f = 1.0MHZ b tD(ON) VDD = 15V ID =1A VGS = 10V R L = 15 ohmRGEN = 11 ohm t tD(OFF) Fall time t Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd 2 3 S T U/D20N03L E LE CTR ICAL CHAR ACTE R IS TICS (T C =25 C unless otherwise noted) Parameter Min Typ Max Unit Condition S ymbol DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS a Diode Forward Voltage 1 V GS = 0V, Is = 20A VSD 1.3 Notes a.Pulse Test:Pulse Width 300us, Duty Cycle 2%. b.Guaranteed by design, not subject to production testing. 12 20 V G S =10,9,8,7,6,5V V G S =2.5V 8 I D , Drain C urrent (A) I D , Drain C urrent (A) 10 6 4 2 V G S =1.5V 0 0 2 4 6 8 10 15 10 T j=125 C 5 -55 C 25 C 0 12 0 F igure 1. Output C haracteris tics 2 2.5 3 3.5 F igure 2. Trans fer C haracteris tics 900 R DS (ON) , Normalized Drain-S ource, On-R es is tance 1.6 750 C , C apacitance (pF ) 1.5 V G S , G ate-to-S ource Voltage (V ) V DS , Drain-to-S ource Voltage (V ) C is s 600 450 300 150 0 1 C os s C rs s 0 5 10 15 20 25 1.4 1.2 1.0 0.8 0.6 0.4 -55 30 V G S =10V I D =20A -25 0 25 50 75 100 125 T j( C ) V DS , Drain-to S ource Voltage (V ) T j, J unction T emperature ( C ) F igure 3. C apacitance F igure 4. On-R es is tance Variation with Drain C urrent and Temperature 3 V B V DS S , Normalized Drain-S ource B reakdown V oltage 1.15 V DS =V G S I D =250uA 1.10 1.05 1.00 0.95 0.90 0.85 0.80 -50 -25 0 25 50 75 100 125 150 1.15 I D =250uA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) F igure 5. G ate T hres hold V ariation with T emperature F igure 6. B reakdown V oltage V ariation with T emperature 20.0 18 Is , S ource-drain current (A) 15 12 9 6 3 10.0 1.0 0.1 0 0 5 10 15 0.4 20 0.6 0.8 1.0 1.2 1.4 I DS , Drain-S ource C urrent (A) V S D , B ody Diode F orward V oltage (V ) F igure 7. T rans conductance V ariation with Drain C urrent F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent 100 10 V DS =15V I D =1A 8 70 I D , Drain C urrent (A) gF S , T rans conductance (S ) V DS =10V V G S , G ate to S ource V oltage (V ) 6 V th, Normalized G ate-S ource T hres hold V oltage S T U/D20N03L 6 4 2 0 0 3 6 9 12 15 18 R Qg, T otal G ate C harge (nC ) ( L im 1m it 10 10 10 1 0.5 0.1 21 24 DS ) ON DC 1s 0m s ms s V G S =10V S ingle P ulse T c=25 C 1 10 30 60 V DS , Drain-S ource V oltage (V ) F igure 10. Maximum S afe O perating Area F igure 9. G ate C harge 4 S T U/D20N03L V DD ton V IN D tf 90% 90% V OUT V OUT VG S R GE N toff td(off) tr td(on) RL 10% INVE R TE D 10% 6 G 90% S V IN 50% 50% 10% P ULS E WIDTH F igure 12. S witching Waveforms F igure 11. S witching T es t C ircuit r(t),Normalized E ffective T ransient T hermal Impedance 2 1 D=0.5 0.2 0.1 0.1 P DM 0.05 t1 0.02 0.01 1. 2. 3. 4. S ING LE P ULS E 0.01 10 -5 10 -4 10 -3 10 -2 10 -1 t2 R θJ A (t)=r (t) * R θJ A R θJ A =S ee Datas heet T J M-T A = P DM* R θJ A (t) Duty C ycle, D=t1/t2 1 S quare Wave P uls e Duration (s ec) F igure 13. Normalized T hermal T rans ient Impedance C urve 5 10 S T U/D20N03L 6 S T U/D20N03L 5 95 7 84 L2 9 6.00 35 05 85 0.94 4 3 0 9 36 2.29 9.70 1.425 0.650 0.600 BSC 1 1.625 0.850 REF. 0.090 82 56 6 0.024 7 9 7 30 3 3 41 3 3 5 1 4 BSC 398 0.064 33 REF. S T U/D20N03L TO251 Tube/TO-252 Tape and Reel Data TO-251 Tube " A" TO-252 Carrier Tape UNIT:㎜ PACKAGE TO-252 (16 ㎜) A0 6.80 ±0.1 B0 K0 10.3 ±0.1 2.50 ±0.1 D0 D1 E E1 E2 P0 P1 P2 T ψ2 ψ1.5 + 0.1 - 0 16.0 0.3± 1.75 0.1± 7.5 ±0.15 8.0 ±0.1 4.0 ±0.1 2.0 ±0.15 0.3 ±0.05 TO-252 Reel S UNIT:㎜ TAPE SIZE 16 ㎜ REEL SIZE M N W T H ψ 330 ψ330 ± 0.5 ψ97 ± 1.0 17.0 + 1.5 - 0 2.2 ψ13.0 + 0.5 - 0.2 8 K S 10.6 2.0 ±0.5 G R V