ETC SSM4410

SSS
S S M4410
S outh S ea S emiconductor
J an 04 2005 ver1.2
N-C hannel E nhancement Mode MOS FE T
F E AT UR E S
P R ODUC T S UMMAR Y
V DS S
ID
R DS (ON)
S uper high dense cell design for low R DS (ON ).
( m W ) Max
R ugged and reliable.
10 @ V G S = 10V
30V
S urface Mount P ackage.
11A
18 @ V G S = 4.5V
S O-8
1
ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted)
S ymbol
Limit
Unit
Drain-S ource Voltage
V DS
30
V
Gate-S ource Voltage
V GS
20
V
P arameter
Drain C urrent-C ontinuous a @ T J =25 C
b
-P ulsed
ID
11
A
IDM
39
A
Drain-S ource Diode Forward C urrent a
IS
1.7
A
Maximum P ower Dissipation a
PD
2.5
W
Operating Junction and S torage
Temperature R ange
T J , T S TG
-55 to 150
C
R JA
50
C /W
THE R MAL C HAR AC TE R IS TIC S
Thermal R esistance, Junction-to-Ambient a
1
S S M4410
E LE CTR ICAL CHAR ACTE R IS TICS (T A =25 C unless otherwise noted)
Parameter
5
Min Typ C Max Unit
S ymbol
Condition
Drain-S ource Breakdown Voltage
BV DS S
V GS = 0V, ID = 250uA
Zero Gate Voltage Drain Current
IDS S
V DS = 24V, V GS = 0V
1
Gate-Body Leakage
IGS S
V GS = 20V, V DS = 0V
100 nA
Gate Threshold Voltage
V GS (th)
V DS = V GS , ID = 250uA
Drain-S ource On-S tate R esistance
R DS (ON)
On-S tate Drain Current
ID(ON)
gFS
OFF CHAR ACTE R IS TICS
30
V
uA
ON CHAR ACTE R IS TICS b
Forward Transconductance
1
1.7
3
V
V GS =10V, ID = 9A
8.5
10 m ohm
V GS =4.5V, ID= 5A
16
18
V DS = 10V, V GS = 10V
20
m ohm
A
13
S
1500
PF
380
PF
240
PF
31
ns
9.5
ns
50.5
ns
28.5
ns
V DS =15V, ID = 9A,V GS =10V
30.5
nC
V DS =15V, ID = 9A,V GS =4.5V
15
nC
6
8
nC
V DS = 10V, ID = 9A
DYNAMIC CHAR ACTE R IS TICS c
Input Capacitance
C IS S
Output Capacitance
C OS S
R everse Transfer Capacitance
CRSS
S WITCHING CHAR ACTE R IS TICS
Turn-On Delay Time
R ise Time
Turn-Off Delay Time
V DS =15V, V GS = 0V
f =1.0MH Z
c
tD(ON)
V DD = 15V
ID = 1A
V GS = 10V
R GE N = 6 ohm
tr
tD(OFF)
Fall Time
tf
Total Gate Charge
Qg
Gate-S ource Charge
Q gs
Gate-Drain Charge
Q gd
V DS =15V, ID = 9A
V GS =10V
2
nC
S S M4410
E LE CTR ICAL CHAR ACTE R IS TICS (T A=25 C unless otherwise noted)
Parameter
Condition
Min Typ C Max Unit
V GS = 0V, Is =1.7A
0.78 1.2
S ymbol
DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS b
Diode Forward Voltage
VSD
Notes
a.Surface Mounted on FR 4 Board, t <=10sec.
b.Pulse Test:Pulse Width<=300us, Duty Cycle<= 2%.
c.Guaranteed by design, not subject to production testing.
20
20
V G S =4V
16
15
V G S =8V
V G S =10V
12
I D , Drain C urrent (A)
I D , Drain C urrent (A)
125 C
V G S =4.5V
V G S =3.5V
8
4
0
V G S =3V
10
-55 C
5
25 C
1
0
0
0.5
1
1.5
2
0
3
2.5
2.1
2.8
4.2
3.5
F igure 2. Trans fer C haracteris tics
F igure 1. Output C haracteris tics
2400
1.8
2000
1.6
R DS (ON) , On-R es is tance
(Normalized)
C , C apacitance (pF )
1.4
V G S , G ate-to-S ource Voltage (V )
V DS , Drain-to-S ource Voltage (V )
1600
C is s
1200
800
C os s
400
0.7
V G S =10V
I D =9A
1.4
1.2
1.0
0.8
C rs s
0
0
5
10
15
20
25
0.6
-55
30
-25
0
25
50
75
100
125
T j, J unction T emperature ( C )
V DS , Drain-to S ource Voltage (V )
F igure 4. On-R es is tance Variation with
Temperature
F igure 3. C apacitance
3
V
1.3
B V DS S , Normalized
Drain-S ource B reakdown V oltage
V th, Normalized
G ate-S ource T hres hold V oltage
S S M4410
V DS =V G S
I D =250uA
1.2
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25
0
25
50
75
100 125
1.15
I D =250uA
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25
0
25
50
75 100 125
T j, J unction T emperature ( C )
T j, J unction T emperature ( C )
F igure 5. G ate T hres hold V ariation
with T emperature
F igure 6. B reakdown V oltage V ariation
with T emperature
20
20.0
16
Is , S ource-drain current (A)
gF S , T rans conductance (S )
V G S =0V
12
8
4
V DS =10V
1.0
0
0
5
10
15
10.0
20
0.2
0.4
I DS , Drain-S ource C urrent (A)
0.8
1.0
1.2
V S D , B ody Diode F orward V oltage (V )
F igure 7. T rans conductance V ariation
with Drain C urrent
F igure 8. B ody Diode F orward V oltage
V ariation with S ource C urrent
10
it
50
6
4
2
0
4
8
12 16
20
24 28
N)
S
1
0.1
DC
Qg, T otal G ate C harge (nC )
1s
0m
ms
s
V G S =10V
S ingle P ulse
T A =25 C
0.1
32
10
10
0.03
0
(O
10
RD
8
L im
V DS =15V
I D =9A
I D , Drain C urrent (A)
V G S , G ate to S ource V oltage (V )
0.6
1
10
30 50
V DS , Drain-S ource V oltage (V )
F igure 10. Maximum S afe
O perating Area
F igure 9. G ate C harge
4
S S M4410
V DD
ton
RL
V IN
D
td(off)
V OUT
V OUT
10%
5
tf
90%
90%
VG S
R GE N
toff
tr
td(on)
INVE R TE D
10%
G
90%
S
V IN
50%
50%
10%
P ULS E WIDTH
F igure 12. S witching Waveforms
F igure 11. S witching T es t C ircuit
r(t),Normalized E ffective
T ransient T hermal Impedance
2
1
Duty C ycle=0.5
0.2
P DM
0.1
0.1
t1
0.05
1.
2.
3.
4.
0.02
S ingle P uls e
0.01
10
-4
10
-3
10
-2
10
-1
R θJ A (t)=r (t) * R θJ A
R θJ A =S ee Datas heet
T J M-T A = P DM* R θJ A (t)
Duty C ycle, D=t1/t2
1
S quare Wave P uls e Duration (s ec)
F igure 13. Normalized T hermal T rans ient Impedance C urve
5
t2
10
100
S S M4410
PAC K AG E OUT LINE DIME NS IONS
S O-8
1
L
E
D
A
C
0.015X45°
B
0.016 TYP.
S Y MB OLS
A
A1
D
E
H
L
A1
e
0.05 TYP.
0.008
TYP.
H
MILLIME T E R S
MIN
1.35
0.10
4.80
3.81
5.79
0.41
0°
MAX
1.75
0.25
4.98
3.99
6.20
1.27
8°
6
INC HE S
MIN
0.053
0.004
0.189
0.150
0.228
0.016
0°
MAX
0.069
0.010
0.196
0.157
0.244
0.050
8°
S S M4410
SO-8 Tape and Reel Data
SO-8 Carrier Tape
unit:㎜
PACKAGE
SOP 8N
150㏕
A0
6.40
B0
5.20
K0
D0
D1
E
E1
E2
2.10
ψ1.5
(MIN)
ψ1.5
+ 0.1
- 0.0
12.0
±0.3
1.75
5.5
±0.05
M
N
W
W1
H
K
330
± 1
62
±1.5
P1
P2
T
8.0
4.0
2.0
±0.05
0.3
±0.05
S
G
R
V
P0
SO-8 Reel
UNIT:㎜
TAPE SIZE
12 ㎜
REEL SIZE
ψ330
12.4
+ 0.2
16.8
- 0.4
7
ψ12.75
+ 0.15
2.0
±0.15