STM4952

S T M4952
May,24 2005 ver1.1
S amHop Microelectronics C orp.
Dual P -C hannel E nhancement Mode Field E ffect Transistor
F E AT UR E S
P R ODUC T S UMMAR Y
V DS S
ID
R DS (ON)
S uper high dense cell design for low R DS (ON ).
( m W ) MAX
R ugged and reliable.
50 @ V G S = -4.5V
-20V
-5.2A
S urface Mount P ackage.
80 @ V G S = -2.5V
D1
D1
D2
D2
8
7
6
5
S O-8
1
1
2
3
4
S1
G1
S2
G2
ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted)
S ymbol
P arameter
Limit
Unit
Drain-S ource Voltage
V DS
-20
V
Gate-S ource Voltage
V GS
12
V
Drain C urrent-C ontinuous a @ T J =125 C
b
-P ulsed (300us Pulse Width)
ID
-5.2
A
IDM
-26
A
Drain-S ource Diode Forward C urrent a
IS
-1.7
A
Maximum P ower Dissipation a
PD
2
W
T J , T S TG
-55 to 150
C
Operating Junction and S torage
Temperature R ange
THE R MAL C HAR AC TE R IS TIC S
Thermal R esistance, Junction-to-Ambient a
R JA
1
62.5
C /W
S T M4952
E LE CTR ICAL CHAR ACTE R IS TICS (T A =25 C unless otherwise noted)
Parameter
Condition
S ymbol
Min Typ C Max Unit
OFF CHAR ACTE R IS TICS
Drain-S ource Breakdown Voltage
BV DS S
V GS = 0V, ID = -250uA
Zero Gate Voltage Drain Current
IDS S
V DS = -16V, V GS = 0V
-1
Gate-Body Leakage
IGS S
V GS = 12V, V DS = 0V
100 nA
Gate Threshold Voltage
V GS (th)
V DS = V GS , ID = -250uA
Drain-S ource On-S tate R esistance
R DS (ON)
On-S tate Drain Current
ID(ON)
gFS
-20
V
uA
ON CHAR ACTE R IS TICS b
Forward Transconductance
-0.6 -0.85 -1.5
V
V GS =-4.5V, ID = -5A
50 m-ohm
V GS = -2.5V, ID = -3A
80 m-ohm
V DS = -5V, V GS = -4.5V
V DS = -15V, ID = - 4.9A
-20
A
8
S
994
PF
181
PF
106
PF
12
ns
7.3
ns
81.4
ns
33.2
ns
9.5
nC
1.7
nC
1.8
nC
DYNAMIC CHAR ACTE R IS TICS c
Input Capacitance
C IS S
Output Capacitance
C OS S
R everse Transfer Capacitance
CRSS
S WITCHING CHAR ACTE R IS TICS
Turn-On Delay Time
R ise Time
Turn-Off Delay Time
V DS =-10V, V GS = 0V
f =1.0MH Z
c
tD(ON)
tr
tD(OFF)
Fall Time
tf
Total Gate Charge
Qg
Gate-S ource Charge
Q gs
Gate-Drain Charge
Q gd
V D = -10V,
R L =10 ohm
ID = -1A,
V GE N = -4.5V,
R GE N = 10 ohm
V DS =-10V, ID = - 1A,
V GS =-4.5V
2
S T M4952
E LE CTR ICAL CHAR ACTE R IS TICS (T A=25 C unless otherwise noted)
Parameter
Min Typ C Max Unit
Condition
S ymbol
DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS b
Diode Forward Voltage
5
V GS = 0V, Is =-1.7A
VSD
-0.89 -1.3
Notes
a.Surface Mounted on FR 4 Board, t <=10sec.
b.Pulse Test:Pulse Width<=300us, Duty Cycle<= 2%.
c.Guaranteed by design, not subject to production testing.
25
20
25 C
-V G S =3V
20
-I D , Drain C urrent (A)
-I D , Drain C urrent (A)
16
-V G S =10,9,8,7,6,5,4V
12
-V G S =2V
8
4
0
15
10
5
0
2
0
4
6
8
10
12
0.4
0
2.2
1250
1.8
RDS(ON), On-Resistance
(Normalized)
C , C apacitance (pF )
1500
C is s
750
500
0
C os s
C rs s
0
5
15
20
25
2.0
2.4
30
V G S =-4.5V
I D =-5A
1.4
1.0
0.6
0.2
0
10
1.6
F igure 2. Trans fer C haracteris tics
F igure 1. Output C haracteris tics
250
1.2
0.8
-V G S , G ate-to-S ource Voltage (V )
-V DS , Drain-to-S ource Voltage (V )
1000
-55 C
T j=125 C
-50
-25
0
25
50
75
100
125
T j, J unction T emperature ( C )
-V DS , Drain-to S ource Voltage (V )
F igure 4. On-R es is tance Variation with
Temperature
F igure 3. C apacitance
3
V
B V DS S , Normalized
Drain-S ource B reakdown V oltage
1.4
V DS =V G S
I D =-250uA
1.2
1.0
0.8
0.6
0.4
0.2
-50
0
-25
50
25
100
75
125
I D =-250uA
1.10
1.05
1.00
0.95
0.90
0.85
-50
0
-25
25
50
100
75
125
T j, J unction T emperature ( C )
F igure 5. G ate T hres hold V ariation
with T emperature
F igure 6. B reakdown V oltage V ariation
with T emperature
20.0
V G S =0V
12
-Is , S ource-drain current (A)
gF S , T rans conductance (S )
1.15
T j, J unction T emperature ( C )
15
9
6
3
V DS =-15V
5
10
15
10.0
1.0
0
0
20
0.4
-I DS , Drain-S ource C urrent (A)
0.6
0.7
0.9
1.1
1.3
-V S D , B ody Diode F orward V oltage (V )
F igure 7. T rans conductance V ariation
with Drain C urrent
F igure 8. B ody Diode F orward V oltage
V ariation with S ource C urrent
5
40
V DS =-4.5V
I D =-1A
4
-I D , Drain C urrent (A)
-V G S , G ate to S ource V oltage (V )
5
-V th, Normalized
G ate-S ource T hres hold V oltage
S T M4952
3
2
1
10
0
2
4
6
8
10
12
14
Qg, T otal G ate C harge (nC )
L im
it
10
10
0.1
0m
ms
s
1s
DC
V G S =-4.5V
S ingle P ulse
T A =25 C
0.1
16
N)
1
0.03
0
R
(O
DS
1
10
20 30
-V DS , Drain-S ource V oltage (V )
F igure 10. Maximum S afe
O perating Area
F igure 9. G ate C harge
4
S T M4952
-V DD
ton
V IN
D
td(off)
V OUT
V OUT
5
tf
90%
90%
VG S
R GE N
toff
tr
td(on)
RL
10%
10%
G
90%
S
V IN
50%
10%
50%
INVE R TE D
P ULS E WIDTH
F igure 12. S witching Waveforms
F igure 11. S witching T es t C ircuit
r(t),Normalized E ffective
T ransient T hermal Impedance
2
1
Duty C ycle=0.5
0.2
P DM
0.1
0.1
t1
0.05
1.
2.
3.
4.
0.02
S ingle P uls e
0.01
10
-4
10
-3
10
-2
10
-1
R thJ A (t)=r (t) * R thJ A
R thJ A =S ee Datas heet
T J M-T A = P DM* R thJ A (t)
Duty C ycle, D=t1/t2
1
S quare Wave P uls e Duration (s ec)
F igure 13. Normalized T hermal T rans ient Impedance C urve
5
t2
10
100
S T M4952
PAC K AG E OUT LINE DIME NS IONS
S O-8
1
L
E
D
A
C
0.015X45°
B
0.016 TYP.
S Y MB OLS
A
A1
D
E
H
L
A1
e
0.05 TYP.
0.008
TYP.
H
MILLIME T E R S
MIN
1.35
0.10
4.80
3.81
5.79
0.41
0°
MAX
1.75
0.25
4.98
3.99
6.20
1.27
8°
6
INC HE S
MIN
0.053
0.004
0.189
0.150
0.228
0.016
0°
MAX
0.069
0.010
0.196
0.157
0.244
0.050
8°
S T M4952
SO-8 Tape and Reel Data
SO-8 Carrier Tape
unit:㎜
PACKAGE
SOP 8N
150㏕
A0
6.40
B0
5.20
K0
D0
D1
E
E1
E2
2.10
ψ1.5
(MIN)
ψ1.5
+ 0.1
- 0.0
12.0
±0.3
1.75
5.5
±0.05
M
N
W
W1
H
K
330
± 1
62
±1.5
P1
P2
T
8.0
4.0
2.0
±0.05
0.3
±0.05
S
G
R
V
P0
SO-8 Reel
UNIT:㎜
TAPE SIZE
12 ㎜
REEL SIZE
ψ330
12.4
+ 0.2
16.8
- 0.4
7
ψ12.75
+ 0.15
2.0
±0.15