S T U/D410S S amHop Microelectronics C orp. Mar. 26 2007 N-C hannel Logic Level E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID ( mW ) R DS (ON) S uper high dense cell design for low R DS (ON ). Max R ugged and reliable. S urface Mount P ackage. E S D P rotected. 20 @ V G S = 10V 40V 30A 30 @ V G S = 4.5V D D G D G S S TU S E R IE S TO-252AA(D-P AK) G S S TD S E R IE S TO-251(l-P AK) S ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted) S ymbol Limit Unit Drain-S ource Voltage V DS 40 V Gate-S ource Voltage V GS 20 V ID 30 A IDM 100 A Drain-S ource Diode Forward C urrent IS 8 A Maximum P ower Dissipation @ Tc=25 C PD 50 W Operating and S torage Temperature R ange T J , T S TG -55 to 175 C Thermal R esistance, Junction-to-C ase R JC 3 C /W Thermal R esistance, Junction-to-Ambient R JA 50 C /W P arameter Drain C urrent-C ontinuous b -P ulsed a @ T C =25 C THE R MAL C HAR AC TE R IS TIC S 1 S T U/D410S E LE CTR ICAL CHAR ACTE R IS TICS (T C =25 C unless otherwise noted) Parameter 5 Min Typ C Max Unit S ymbol Condition Drain-S ource Breakdown Voltage BV DS S V GS = 0V, ID = 250uA Zero Gate Voltage Drain Current IDS S V DS = 32V, V GS = 0V 1 uA Gate-Body Leakage IGS S V GS = 20V, V DS = 0V 10 uA Gate Threshold Voltage V GS (th) V DS = V GS , ID = 250uA 1.9 3 V Drain-S ource On-S tate R esistance R DS (ON) V GS =10V, ID = 10A 16 20 m ohm V GS =4.5V, ID= 8A 23 30 m ohm OFF CHAR ACTE R IS TICS 40 V ON CHAR ACTE R IS TICS a On-S tate Drain Current Forward Transconductance V DS = 10V, V GS = 10V ID(ON) gFS 1 30 A 17 S 690 PF 140 PF 95 PF 13.1 ns 13.5 ns 45.7 ns 11.8 ns V DS =20V, ID =10A,V GS =10V 13.5 nC V DS =20V, ID =10A,V GS =4.5V 6.7 nC 1.65 nC nC V DS = 10V, ID = 10A DYNAMIC CHAR ACTE R IS TICS b Input Capacitance C IS S Output Capacitance C OS S R everse Transfer Capacitance CRSS V DS =15V, V GS = 0V f =1.0MH Z S WITCHING CHAR ACTE R IS TICS b Turn-On Delay Time R ise Time Turn-Off Delay Time tD(ON) tr tD(OFF) Fall Time tf Total Gate Charge Qg Gate-S ource Charge Q gs Gate-Drain Charge Q gd V DD = 15V ID = 1 A V GS = 10V R GE N = 3 ohm V DS =20V, ID = 10A V GS =10V 2 3.85 S T U/D410S E LE CTR ICAL CHAR ACTE R IS TICS (T C =25 C unless otherwise noted) Parameter Min Typ Max Unit Condition S ymbol DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS a Diode Forward Voltage 0.84 V GS = 0V, Is = 8A VSD 1.3 Notes a.Pulse Test:Pulse Width 300us, Duty Cycle 2%. b.Guaranteed by design, not subject to production testing. 45 20 V G S =10V V G S =4.5V 16 V G S =4V I D , Drain C urrent (A) ID , Drain C urrent(A) 36 27 18 V G S =3.5V 9 V G S =3V 12 8 25 C 4 -55 C 0 0 0 0.5 1.5 1.0 2.5 2.0 T j= 125 C 3.0 0 V DS , Drain-to-S ource Voltage (V ) 3.2 2.4 4.0 4.8 F igure 2. Trans fer C haracteris tics 1.75 R DS (ON) , On-R es is tance Normalized 42 35 R DS (on) (m Ω ı ) 1.6 V G S , G ate-to-S ource Voltage (V ) F igure 1. Output C haracteris tics 28 V G S =4.5V 21 14 V G S =10V 7 0 0.8 1 9 18 27 36 1.60 1.30 1.15 V G S =4.5V I D =8A 1.0 0.8 -25 45 V G S =10V I D =10A 1.45 0 25 50 75 100 125 150 T j( C ) I D , Drain C urrent (A) T j, J unction T emperature ( C ) F igure 3. On-R es is tance vs . Drain C urrent and G ate V oltage 3 F igure 4. On-R es is tance Variation with Drain C urrent and Temperature V B V DS S , Normalized Drain-S ource B reakdown V oltage 1.2 V DS =V G S I D =250uA 1.1 1.0 0.9 0.8 0.7 0.6 0.5 -50 -25 0 25 50 75 1.15 I D =250uA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 100 125 150 0 25 50 75 100 125 150 T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) F igure 5. G ate T hres hold V ariation with T emperature F igure 6. B reakdown V oltage V ariation with T emperature 54 20.0 I D =10A Is , S ource-drain current (A) 45 R DS (on) (m Ω ı ) 6 V th, Normalized G ate-S ource T hres hold V oltage S T U/D410S 36 125 C 27 18 75 C 25 C 9 0 125 C 10.0 25 C 75 C 1.0 0 2 4 6 8 10 0.2 V G S , G ate- S ource Voltage (V ) 0.4 0.6 0.8 1.0 1.2 V S D , B ody Diode F orward V oltage (V ) F igure 7. On-R es is tance vs . G ate-S ource V oltage F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent 4 S T U/D410S C is s 600 450 300 C os s 150 C rs s 0 5 10 15 10 V DS =20V I D =10A 8 6 4 2 0 0 20 25 30 0 3 V DS , Drain-to S ource Voltage (V ) 150 100 10 I D , Drain C urrent (A) S witching T ime (ns ) Tr T D(on) T D(off) Tf 10 V DS =15V ,ID=1A 1 RD 0.1 0.1 60 100 300 600 6 10 S ( ) ON L im 15 18 21 24 it 1m 10 m 1 V G S =10V 1 12 F igure 10. G ate C harge 220 100 60 9 6 Qg, T otal G ate C harge (nC ) F igure 9. C apacitance DC 10 0m s 1s s s V G S =10V S ingle P ulse T c=25 C 1 R g, G ate R es is tance ( ı ) 10 30 60 V DS , Drain-S ource V oltage (V ) F igure 12. Maximum S afe O perating Area F igure 11.s witching characteris tics 2 r(t),Normalized E ffective T ransient T hermal Impedance 6 C , C apacitance (pF ) 750 V G S , G ate to S ource V oltage (V ) 900 1 D=0.5 0.2 0.1 P DM 0.1 0.05 t1 t2 0.02 0.01 1. 2. 3. 4. S ING LE P ULS E 0.01 10 -5 10 -4 10 -3 10 -2 10 -1 R ⋇J A (t)=r (t) * R ⋇J A R ⋇J A =S ee Datas heet T J M-T A = P DM* R ⋇J A (t) Duty C ycle, D=t1/t2 1 S quare Wave P uls e Duration (s ec) F igure 13. Normalized T hermal T rans ient Impedance C urve 5 10 S T U/D410S 6 S T U/D410S 5 95 7 84 L2 9 6.00 35 05 85 0.94 4 3 0 9 36 2.29 9.70 1.425 0.650 0.600 BSC 1 1.625 0.850 REF . 0.090 82 56 6 0.024 7 9 7 30 3 3 41 3 3 5 1 4 BSC 398 0.064 33 REF . S T U/D410S TO-252 Tape and Reel Data TO-252 Carrier Tape UNIT: ȱ PACKAGE A0 B0 K0 TO-252 (16 ȱ+ 6.80 㨼 0.1 10.3 㨼 0.1 2.50 㨼 0.1 D0 D1 ᭑2 ᭑1.5 + 0.1 - 0 E 16.0 0.3 㨼 E1 1.75 0.1 㨼 E2 P0 P1 P2 T 7.5 㨼 0.15 8. 0 㨼 0.1 4. 0 㨼 0.1 2.0 㨼 0.15 0.3 㨼 0.05 TO-252 Reel S UNIT: ȱ TAPE SIZE 16 ȱ REEL SIZE M ᭑ 330 ᭑330 㨼 0.5 N W ᭑97 㨼 1.0 17.0 + 1.5 - 0 T H 2. 2 ᭑13.0 + 0.5 - 0.2 8 K S 10.6 2.0 㨼 0.5 G R V