SAMHOP STD410S

S T U/D410S
S amHop Microelectronics C orp.
Mar. 26 2007
N-C hannel Logic Level E nhancement Mode Field E ffect Transistor
F E AT UR E S
P R ODUC T S UMMAR Y
V DS S
ID
( mW )
R DS (ON)
S uper high dense cell design for low R DS (ON ).
Max
R ugged and reliable.
S urface Mount P ackage.
E S D P rotected.
20 @ V G S = 10V
40V
30A
30 @ V G S = 4.5V
D
D
G
D
G
S
S TU S E R IE S
TO-252AA(D-P AK)
G
S
S TD S E R IE S
TO-251(l-P AK)
S
ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted)
S ymbol
Limit
Unit
Drain-S ource Voltage
V DS
40
V
Gate-S ource Voltage
V GS
20
V
ID
30
A
IDM
100
A
Drain-S ource Diode Forward C urrent
IS
8
A
Maximum P ower Dissipation @ Tc=25 C
PD
50
W
Operating and S torage Temperature R ange
T J , T S TG
-55 to 175
C
Thermal R esistance, Junction-to-C ase
R JC
3
C /W
Thermal R esistance, Junction-to-Ambient
R JA
50
C /W
P arameter
Drain C urrent-C ontinuous
b
-P ulsed
a
@ T C =25 C
THE R MAL C HAR AC TE R IS TIC S
1
S T U/D410S
E LE CTR ICAL CHAR ACTE R IS TICS (T C =25 C unless otherwise noted)
Parameter
5
Min Typ C Max Unit
S ymbol
Condition
Drain-S ource Breakdown Voltage
BV DS S
V GS = 0V, ID = 250uA
Zero Gate Voltage Drain Current
IDS S
V DS = 32V, V GS = 0V
1
uA
Gate-Body Leakage
IGS S
V GS = 20V, V DS = 0V
10
uA
Gate Threshold Voltage
V GS (th)
V DS = V GS , ID = 250uA
1.9
3
V
Drain-S ource On-S tate R esistance
R DS (ON)
V GS =10V, ID = 10A
16
20
m ohm
V GS =4.5V, ID= 8A
23
30
m ohm
OFF CHAR ACTE R IS TICS
40
V
ON CHAR ACTE R IS TICS a
On-S tate Drain Current
Forward Transconductance
V DS = 10V, V GS = 10V
ID(ON)
gFS
1
30
A
17
S
690
PF
140
PF
95
PF
13.1
ns
13.5
ns
45.7
ns
11.8
ns
V DS =20V, ID =10A,V GS =10V
13.5
nC
V DS =20V, ID =10A,V GS =4.5V
6.7
nC
1.65
nC
nC
V DS = 10V, ID = 10A
DYNAMIC CHAR ACTE R IS TICS b
Input Capacitance
C IS S
Output Capacitance
C OS S
R everse Transfer Capacitance
CRSS
V DS =15V, V GS = 0V
f =1.0MH Z
S WITCHING CHAR ACTE R IS TICS b
Turn-On Delay Time
R ise Time
Turn-Off Delay Time
tD(ON)
tr
tD(OFF)
Fall Time
tf
Total Gate Charge
Qg
Gate-S ource Charge
Q gs
Gate-Drain Charge
Q gd
V DD = 15V
ID = 1 A
V GS = 10V
R GE N = 3 ohm
V DS =20V, ID = 10A
V GS =10V
2
3.85
S T U/D410S
E LE CTR ICAL CHAR ACTE R IS TICS (T C =25 C unless otherwise noted)
Parameter
Min Typ Max Unit
Condition
S ymbol
DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS a
Diode Forward Voltage
0.84
V GS = 0V, Is = 8A
VSD
1.3
Notes
a.Pulse Test:Pulse Width 300us, Duty Cycle 2%.
b.Guaranteed by design, not subject to production testing.
45
20
V G S =10V
V G S =4.5V
16
V G S =4V
I D , Drain C urrent (A)
ID , Drain C urrent(A)
36
27
18
V G S =3.5V
9
V G S =3V
12
8
25 C
4
-55 C
0
0
0
0.5
1.5
1.0
2.5
2.0
T j= 125 C
3.0
0
V DS , Drain-to-S ource Voltage (V )
3.2
2.4
4.0
4.8
F igure 2. Trans fer C haracteris tics
1.75
R DS (ON) , On-R es is tance
Normalized
42
35
R DS (on) (m Ω
ı )
1.6
V G S , G ate-to-S ource Voltage (V )
F igure 1. Output C haracteris tics
28
V G S =4.5V
21
14
V G S =10V
7
0
0.8
1
9
18
27
36
1.60
1.30
1.15
V G S =4.5V
I D =8A
1.0
0.8
-25
45
V G S =10V
I D =10A
1.45
0
25
50
75
100
125 150
T j( C )
I D , Drain C urrent (A)
T j, J unction T emperature ( C )
F igure 3. On-R es is tance vs . Drain C urrent
and G ate V oltage
3
F igure 4. On-R es is tance Variation with
Drain C urrent and Temperature
V
B V DS S , Normalized
Drain-S ource B reakdown V oltage
1.2
V DS =V G S
I D =250uA
1.1
1.0
0.9
0.8
0.7
0.6
0.5
-50 -25
0
25
50
75
1.15
I D =250uA
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25
100 125 150
0
25
50
75
100 125 150
T j, J unction T emperature ( C )
T j, J unction T emperature ( C )
F igure 5. G ate T hres hold V ariation
with T emperature
F igure 6. B reakdown V oltage V ariation
with T emperature
54
20.0
I D =10A
Is , S ource-drain current (A)
45
R DS (on) (m Ω
ı )
6
V th, Normalized
G ate-S ource T hres hold V oltage
S T U/D410S
36
125 C
27
18
75 C
25 C
9
0
125 C
10.0
25 C
75 C
1.0
0
2
4
6
8
10
0.2
V G S , G ate- S ource Voltage (V )
0.4
0.6
0.8
1.0
1.2
V S D , B ody Diode F orward V oltage (V )
F igure 7. On-R es is tance vs .
G ate-S ource V oltage
F igure 8. B ody Diode F orward V oltage
V ariation with S ource C urrent
4
S T U/D410S
C is s
600
450
300
C os s
150
C rs s
0
5
10
15
10
V DS =20V
I D =10A
8
6
4
2
0
0
20
25
30
0
3
V DS , Drain-to S ource Voltage (V )
150
100
10
I D , Drain C urrent (A)
S witching T ime (ns )
Tr
T D(on)
T D(off)
Tf
10
V DS =15V ,ID=1A
1
RD
0.1
0.1
60 100 300 600
6 10
S
(
)
ON
L im
15
18
21 24
it
1m
10
m
1
V G S =10V
1
12
F igure 10. G ate C harge
220
100
60
9
6
Qg, T otal G ate C harge (nC )
F igure 9. C apacitance
DC
10
0m
s
1s
s
s
V G S =10V
S ingle P ulse
T c=25 C
1
R g, G ate R es is tance ( ı )
10
30
60
V DS , Drain-S ource V oltage (V )
F igure 12. Maximum S afe
O perating Area
F igure 11.s witching characteris tics
2
r(t),Normalized E ffective
T ransient T hermal Impedance
6
C , C apacitance (pF )
750
V G S , G ate to S ource V oltage (V )
900
1
D=0.5
0.2
0.1
P DM
0.1
0.05
t1
t2
0.02
0.01
1.
2.
3.
4.
S ING LE P ULS E
0.01
10
-5
10
-4
10
-3
10
-2
10
-1
R ⋇J A (t)=r (t) * R ⋇J A
R ⋇J A =S ee Datas heet
T J M-T A = P DM* R ⋇J A (t)
Duty C ycle, D=t1/t2
1
S quare Wave P uls e Duration (s ec)
F igure 13. Normalized T hermal T rans ient Impedance C urve
5
10
S T U/D410S
6
S T U/D410S
5
95
7
84
L2
9
6.00
35
05
85
0.94
4
3
0
9
36
2.29
9.70
1.425
0.650
0.600
BSC
1
1.625
0.850
REF .
0.090
82
56
6
0.024
7
9
7
30
3
3
41
3
3
5
1
4
BSC
398
0.064
33
REF .
S T U/D410S
TO-252 Tape and Reel Data
TO-252 Carrier Tape
UNIT: ȱ
PACKAGE
A0
B0
K0
TO-252
(16 ȱ+
6.80
㨼
0.1
10.3
㨼
0.1
2.50
㨼
0.1
D0
D1
᭑2
᭑1.5
+ 0.1
- 0
E
16.0
0.3 㨼
E1
1.75
0.1 㨼
E2
P0
P1
P2
T
7.5
㨼
0.15
8. 0
㨼
0.1
4. 0
㨼
0.1
2.0
㨼
0.15
0.3
㨼
0.05
TO-252 Reel
S
UNIT: ȱ
TAPE SIZE
16 ȱ
REEL SIZE
M
᭑ 330
᭑330
㨼
0.5
N
W
᭑97
㨼
1.0
17.0
+ 1.5
- 0
T
H
2. 2
᭑13.0
+ 0.5
- 0.2
8
K
S
10.6
2.0
㨼
0.5
G
R
V