STM9435

Green
Product
S T M9435
S amHop Microelectronics C orp.
S ep,23,2014 V er 1.1
P -C hannel E nhancement Mode Field E ffect Transistor
P R ODUC T S UMMAR Y
V DS S
ID
F E AT UR E S
R DS (ON)
S uper high dense cell design for low R DS (ON ).
( m Ω ) Max
R ugged and reliable.
55 @ V G S = -10V
-30V
-4.8A
S urface Mount P ackage.
85 @ V G S = -4.5V
S O-8
1
D
5
4
G
D
6
3
S
D
7
2
S
D
8
1
S
ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted)
P arameter
S ymbol
Limit
Unit
Drain-S ource Voltage
V DS
- 30
V
Gate-S ource Voltage
V GS
20
V
Drain C urrent-C ontinuous a @ T J =125 C
b
-P ulsed
ID
- 4.8
A
IDM
- 24
A
Drain-S ource Diode Forward C urrent a
IS
-1.7
A
Maximum P ower Dissipation a
PD
2.5
W
T J , T S TG
-55 to 150
C
R JA
50
C /W
Operating Junction and S torage
Temperature R ange
THE R MAL C HAR AC TE R IS TIC S
Thermal R esistance, Junction-to-Ambient a
1
S T M9435
E LE CTR ICAL CHAR ACTE R IS TICS (T A =25 C unless otherwise noted)
Parameter
5
Condition
S ymbol
Min Typ C Max Unit
OFF CHAR ACTE R IS TICS
Drain-S ource Breakdown Voltage
BV DS S
V GS = 0V, ID = -250uA
Zero Gate Voltage Drain Current
IDS S
V DS = -24V, V GS = 0V
-1
uA
Gate-Body Leakage
IGS S
V GS = 20V, V DS = 0V
100
nA
Gate Threshold Voltage
V GS (th)
V DS = V GS , ID = -250uA
-1.5 -2.5
V
Drain-S ource On-S tate R esistance
R DS (ON)
-30
V
ON CHAR ACTE R IS TICS b
Forward Transconductance
V GS = -10V, ID =-5.3A
45
55
V GS = -4.5V, ID = -4.2A
75
85 m-ohm
V DS = -5V, V GS = -10V
ID(ON)
gFS
On-S tate Drain Current
-1
-20
m-ohm
A
5
S
582
PF
125
PF
86
PF
9
ns
10
ns
37
ns
23
ns
V DS =-15V,ID =-5.3A,V GS =-10V
11.7
nC
V DS =-15V,ID =-5.3A,V GS =-4.5V
5.7
nC
V DS =-15V, ID = -5.3A
V GS =-10V
2.1
nC
2.9
nC
V DS = -5V, ID = - 5.3A
DYNAMIC CHAR ACTE R IS TICS c
Input Capacitance
C IS S
Output Capacitance
C OS S
R everse Transfer Capacitance
CRSS
S WITCHING CHAR ACTE R IS TICS
Turn-On Delay Time
R ise Time
Turn-Off Delay Time
V DS =-15V, V GS = 0V
f =1.0MH Z
c
tD(ON)
V D = -15V
ID = -1A
V GE N = - 10V
R GE N = 6 ohm
R L = 15 ohm
tr
tD(OFF)
Fall Time
tf
Total Gate Charge
Qg
Gate-S ource Charge
Q gs
Gate-Drain Charge
Q gd
2
S T M9435
E LE CTR ICAL CHAR ACTE R IS TICS (T A=25 C unless otherwise noted)
Parameter
Min Typ C Max Unit
Condition
S ymbol
DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS b
Diode Forward Voltage
V GS = 0V, Is =-1.7A
VSD
-0.84 -1.2
Notes
a.Surface Mounted on FR 4 Board, t <=10sec.
b.Pulse Test:Pulse Width<=300us, Duty Cycle<= 2%.
c.Guaranteed by design, not subject to production testing.
25
25
125 C
-V G S =10,9,8,7,6,5V
20
-I D , Drain C urrent (A)
-I D , Drain C urrent (A)
20
15
10
-V G S =3.5V
5
10
5
0
0
0
2
4
6
8
0
12
10
R DS (ON) , On-R es is tance(Ohms )
(Normalized)
900
750
C is s
450
300
C os s
150
C rs s
0
0
5
10
15
20
25
1.6
2.4
3.2
4.8
4.0
F igure 2. Trans fer C haracteris tics
F igure 1. Output C haracteris tics
600
0.8
-V G S , G ate-to-S ource Voltage (V )
-V DS , Drain-to-S ource Voltage (V )
C , C apacitance (pF )
-55 C
25 C
15
1.8
1.6
1.4
1.2
1.0
0.8
0.6
-55
30
V G S =-10V
I D =-5.3A
-25
0
25
50
75
100
125
T j, J unction T emperature ( C )
-V DS , Drain-to S ource Voltage (V )
F igure 4. On-R es is tance Variation with
Temperature
F igure 3. C apacitance
3
V
1.3
B V DS S , Normalized
Drain-S ource B reakdown V oltage
V th, Normalized
G ate-S ource T hres hold V oltage
S T M9435
V DS =V G S
I D =-250uA
1.2
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25
0
25
50
75
100 125
1.15
I D =-250uA
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25
0
25
50
75 100 125
T j, J unction T emperature ( C )
T j, J unction T emperature ( C )
F igure 5. G ate T hres hold V ariation
with T emperature
F igure 6. B reakdown V oltage V ariation
with T emperature
10
20.0
-Is , S ource-drain current (A)
gF S , T rans conductance (S )
V G S =0V
8
6
4
2
V DS =-15V
10.0
1.0
0
0
5
10
15
20
0.4
0.6
-I DS , Drain-S ource C urrent (A)
0.9
1.1
1.3
-V S D , B ody Diode F orward V oltage (V )
F igure 7. T rans conductance V ariation
with Drain C urrent
F igure 8. B ody Diode F orward V oltage
V ariation with S ource C urrent
10
50
V DS =-15V
I D =-5.3A
8
-I D , Drain C urrent (A)
-V G S , G ate to S ource V oltage (V )
0.7
6
4
2
10
RD
0
2
4
6
8
10
12
14
Qg, T otal G ate C harge (nC )
im
it
10
10
1
0m
ms
s
0.1
DC
V G S =-10V
S ingle P ulse
T A =25 C
0.1
16
)L
1s
0.03
0
ON
S(
1
10
30 50
-V DS , Drain-S ource V oltage (V )
F igure 10. Maximum S afe
O perating Area
F igure 9. G ate C harge
4
S T M9435
-V DD
ton
V IN
D
td(off)
tf
90%
90%
V OUT
V OUT
VG S
R GE N
toff
tr
td(on)
RL
10%
10%
G
90%
S
V IN
50%
50%
10%
INVE R TE D
P ULS E WIDTH
F igure 12. S witching Waveforms
F igure 11. S witching T es t C ircuit
r(t),Normalized E ffective
T ransient T hermal Impedance
2
1
Duty C ycle=0.5
0.2
P DM
0.1
0.1
t1
0.05
t2
1.
2.
3.
4.
0.02
S ingle P uls e
R thJ A (t)=r (t) * R thJ A
R thJ A =S ee Datas heet
T J M-T A = P DM* R thJ A (t)
Duty C ycle, D=t1/t2
0.01
10
-4
10
-3
10
-2
10
-1
1
S quare Wave P uls e Duration (s ec)
F igure 13. Normalized T hermal T rans ient Impedance C urve
5
10
100
S T M9435
SO-8
D
E
A2 A
1
e
A1
b
H
h X 45
O
C
L
SYMBOLS
A
A1
A2
b
C
D
E
e
H
L
h
MILLIMETERS
MIN
MAX
INCHES
MIN
MAX
1.75
1.35
0.25
0.10
1.63
1.25
0.51
0.31
0.17
0.25
4.80
5.00
3.70
4.00
1.27 REF.
5.80
6.20
1.27
0.40
0±
8±
0.25
0.50
0.053
0.069
0.004
0.010
0.064
0.049
0.020
0.012
0.010
0.007
0.197
0.189
0.146
0.157
0.050 BSC
0.228
0.244
0.016
0.050
8±
0±
0.020
0.010
6
S T M9435
SO-8 Tape and Reel Data
SO-8 Carrier Tape
unit:р
PACKAGE
SOP 8N
150п
A0
D0
D1
E
E1
E2
P0
P1
P2
T
2.10
ӿ1.5
(MIN)
ӿ1.5
+ 0.1
- 0.0
12.0
²0.3
1.75
5.5
²0.05
8.0
4.0
2.0
²0.05
0.3
²0.05
REEL SIZE
M
N
W
W1
H
K
S
G
R
V
ӿ330
330
² 1
62
²1.5
12.4
+ 0.2
16.8
- 0.4
ӿ12.75
+ 0.15
6.40
B0
5.20
K0
SO-8 Reel
UNIT:р
TAPE SIZE
12 р
7
2.0
²0.15
S T M9435
SO-8
STM9435
Product No.
SamHop Logo
XXXXXX
Production Year (2009 = 9, 2010 = A.....)
Production Month (1,2 ~ 9, A,B,C)
Production Date (1,2 ~ 9, A,B.....)
Wafer Lot No.
SMC internal code No. (A,B,C...Z)
8