STM6913A

S T M6913A
Green
Product
S amHop Microelectronics C orp.
Aug. 10 2012 ver1.2
Dual N-C hannel E nhancement Mode Field E ffffe ct Transistor
F E AT UR E S
P R ODUC T S UMMAR Y
V DS S
ID
R DS (ON)
S uper high dense cell design for low R DS (ON ).
( m Ω ) Max
R ugged and reliable.
18 @ V G S = 10V
30V
S urfa
f ce Mount P ackage.
8.2A
25 @ V G S = 4.5V
D1
D1
D2
D2
8
7
6
5
1
2
3
S1
G1 S 2
S O-8
1
4
G2
ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted)
S ymbol
Limit
Unit
Drain-S ource Voltage
V DS
30
V
Gate-S ource Voltage
V GS
20
V
P arameter
Drain C urrent-C ontinuous a @ T C =25 C
b
-P ulsed
ID
8.2
A
IDM
30
A
Drain-S ource Diode Forward C urrent a
IS
1.7
A
Maximum P ower Dissipation a
PD
2
W
T J , T S TG
-55 to 150
C
R JA
62.5
C /W
Operating Junction and S torage
Temperature R ange
THE R MAL C HAR AC TE R IS TIC S
Thermal R esistance, Junction-to-Ambient a
1
S T M6913A
E LE CTR ICAL CHAR ACTE R IS TICS (T A =25 C unless otherwise noted)
Parameter
Min Typ C Max Unit
S ymbol
Condition
Drain-S ource Breakdown Voltage
BV DS S
V GS = 0V, ID = 250uA
Zero Gate Voltage Drain Current
IDS S
V DS = 24V, V GS = 0V
1
Gate-Body Leakage
IGS S
V GS = 20V, V DS = 0V
100 nA
Gate Threshold Voltage
V GS (th)
V DS = V GS , ID = 250uA
Drain-S ource On-S tate R esistance
R DS (ON)
OFF CHAR ACTE R IS TICS
30
V
uA
ON CHAR ACTE R IS TICS b
ID(ON)
gFS
On-S tate Drain Current
Forward Transconductance
DYNAMIC CHAR ACTE R IS TICS
C IS S
Output Capacitance
C OS S
R everse Transfer Capacitance
CRSS
S WITCHING CHAR ACTE R IS TICS
R ise Time
Turn-Off Delay Time
3
V
V GS =10V, ID = 4.1A
13
18
m ohm
V GS = 4.5V,ID = 3.5A
18
25
m ohm
V DS = 5V, V GS = 10V
A
20
8
S
520
PF
142
PF
90
PF
8.5
ns
14.8
ns
16
ns
10
ns
V DS =15V, ID =4.1A,V GS =10V
11.5
nC
V DS =15V, ID =4.1A,V GS =4.5V
5.8
nC
V DS =15V, ID = 4.1A
V GS =4.5V
1.3
nC
3.1
nC
V DS = 5V, ID = 4.1A
c
Input Capacitance
Turn-On Delay Time
1.7
1
V DS =15V, V GS = 0V
f =1.0MH Z
c
tD(ON)
tr
tD(OFF)
Fall Time
tf
Total Gate Charge
Qg
Gate-S ource Charge
Q gs
Gate-Drain Charge
Q gd
V DD = 15V
ID = 4.1A
V GS = 10V
R GE N = 3 ohm
2
S T M6913A
E LE CTR ICAL CHAR ACTE R IS TICS (T A=25 C unless otherwise noted)
Parameter
Condition
Min Typ C Max Unit
V GS = 0V, Is =1.7A
0.79 1.2
S ymbol
DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS b
Diode Forward Voltage
VSD
Notes
a.Surface Mounted on FR 4 Board, t <=10sec.
b.Pulse Test:Pulse Width<=300us, Duty Cycle<= 2%.
c.Guaranteed by design, not subject to production testing.
25
20
V G S =4.5V
V G S =5V
20
I D , Drain C urrent (A)
I D , Drain C urrent (A)
16
V G S =10V
V G S =4V
12
8
V G S =3.5V
4
V G S =3V
15
125 C
10
-55 C
25 C
5
0
0
0
0.5
1.0
1.5
2.0
2.5
0
3.0
1.6
2.4
3.2
4.8
4.0
V G S , G ate-to-S ource Voltage (V )
V DS , Drain-to-S ource Voltage (V )
F igure 2. Trans fer C haracteris tics
F igure 1. Output C haracteris tics
1.8
600
R DS (ON) , On-R es is tance
(Normalized)
C is s
500
C , C apacitance (pF )
0.8
400
300
C os s
200
C rs s
100
5
10
15
20
25
30
V G S =10V
I D =4.1A
1.4
1.2
1.0
0.8
0.6
-55
0
0
1.6
-25
0
25
50
75
100
125
T j, J unction T emperature ( C )
V DS , Drain-to S ource Voltage (V )
F igure 4. On-R es is tance Variation with
Temperature
F igure 3. C apacitance
3
V
1.3
B V DS S , Normalized
Drain-S ource B reakdown V oltage
V th, Normalized
G ate-S ource T hres hold V oltage
S T M6913A
V DS =V G S
I D =250uA
1.2
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25
0
25
50
75
100 125
1.15
I D =250uA
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25
0
25
50
75 100 125
T j, J unction T emperature ( C )
T j, J unction T emperature ( C )
F igure 5. G ate T hres hold V ariation
with T emperature
F igure 6. B reakdown V oltage V ariation
with T emperature
15
20.0
12
Is , S ource-drain current (A)
gF S , T rans conductance (S )
V G S =0V
9
6
3
V DS =5V
10.0
1.0
0
0
5
10
15
20
0.2
I DS , Drain-S ource C urrent (A)
0.6
0.8
1.0
1.2
V S D , B ody Diode F orward V oltage (V )
F igure 7. T rans conductance V ariation
with Drain C urrent
F igure 8. B ody Diode F orward V oltage
V ariation with S ource C urrent
10
70
V DS =15V
I D =4.1A
8
I D , Drain C urrent (A)
V G S , G ate to S ource V oltage (V )
0.4
6
4
2
10
0
2
4
6
8
10
12
14
Qg, T otal G ate C harge (nC )
it
10
10
1m
0u
us
s
s
ms
DC
1
0.1
16
(
L im
10
0.1
0
R
DS
)
ON
V G S =10V
S ingle P ulse
T c=25 C
1
10
100
V DS , Drain-S ource V oltage (V )
F igure 10. Maximum S afe
O perating Area
F igure 9. G ate C harge
4
S T M6913A
V DD
ton
5
V IN
D
tf
90%
90%
V OUT
V OUT
VG S
R GE N
toff
td(off)
tr
td(on)
RL
INVE R TE D
10%
10%
G
90%
S
V IN
50%
50%
10%
P ULS E WIDTH
F igure 12. S witching Waveforms
F igure 11. S witching T es t C ircuit
Thermal Resistance
Normalized Transient
10
1
0.5
0.2
P DM
0.1
0.1
0.05
t1
t2
0.02
0.01
0.01
0.00001
1.
2.
3.
4.
Single Pulse
0.0001
0.001
0.01
0.1
1
Square Wave Pulse Duration(sec)
Normalized Thermal Transient Impedance Curve
5
10
R thJ A (t)=r (t) * R thJ A
R thJ A =S ee Datas heet
T J M-T A = P DM* R thJ A (t)
Duty C ycle, D=t1/t2
100
1000
S T M6913A
PAC K AG E OUT LINE DIME NS IONS
S O-8
1
L
E
D
A
C
0.015X45±
B
A1
e
0.05 TYP.
0.008
TYP.
0.016 TYP.
H
S Y MB OLS
A
A1
D
E
H
L
MILLIME T E R S
MIN
1.35
0.10
4.80
3.81
5.79
0.41
0±
MAX
1.75
0.25
4.98
3.99
6.20
1.27
8±
6
INC HE S
MIN
0.053
0.004
0.189
0.150
0.228
0.016
0±
MAX
0.069
0.010
0.196
0.157
0.244
0.050
8±
S T M6913A
SO-8 Tape and Reel Data
SO-8 Carrier Tape
unit:р
PACKAGE
SOP 8N
150п
A0
6.40
B0
5.20
D0
D1
E
E1
E2
P0
P1
P2
T
2.10
ӿ1.5
(MIN)
ӿ1.5
+ 0.1
- 0.0
12.0
²0.3
1.75
5.5
²0.05
8.0
4.0
2.0
²0.05
0.3
²0.05
K
S
G
R
V
K0
SO-8 Reel
UNIT:р
TAPE SIZE
REEL SIZE
M
N
W
W1
H
12 р
ӿ330
330
² 1
62
²1.5
12.4
+ 0.2
16.8
- 0.4
ӿ12.75
+ 0.15
7
2.0
²0.15