SANKEN 2SA1386

2SA1386/1386A
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3519/A)
Application : Audio and General Purpose
2SA1386
2SA1386A
Unit
–100max
–100max
µA
–160
–180
15.6±0.4
9.6
VCB=
–180min
–160min
IC=–25mA
IB
–4
A
hFE
VCE=–4V, IC=–5A
50min∗
PC
130(Tc=25°C)
W
VCE(sat)
IC=–5A, IB=–0.5A
–2.0max
V
150
°C
fT
VCE=–12V, IE=2A
40typ
MHz
–55 to +150
°C
COB
VCB=–10V, f=1MHz
500typ
pF
VCC
(V)
RL
(Ω)
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(A)
IB2
(A)
ton
(µs)
tstg
(µs)
tf
(µs)
–40
4
–10
–10
5
–1
1
0.3typ
0.7typ
0.2typ
–
0
40
m
A
–3 00 m A
–200mA
–10
–150mA
–100mA
–5
–50mA
I B =–20mA
0
0
–1
–2
–3
I C – V BE Temperature Characteristics (Typical)
–3
–15
–2
–1
0
0
–0.2
–0.4
–0.6
–0.8
(V C E =–4V)
–5 –10 –15
Transient Thermal Resistance
DC Curr ent Gain h FE
DC Curr ent Gain h FE
–1
0
–1
125˚C
100
25˚C
–30˚C
50
20
–0.02
–0.1
θ j-a – t Characteristics
–0.5
–1
–5
–10 –15
3
1
0.5
0.1
1
10
Collector Current I C (A)
Collector Current I C (A)
f T – I E Characteristics (Typical)
–2
Base-Emittor Voltage V B E (V)
h FE – I C Temperature Characteristics (Typical)
Typ
–0.5
0
–1.0
200
–0.1
–5
Base Current I B (A)
(V C E =–4V)
10
–0.02
–10
I C =–10A
–4
h FE – I C Characteristics (Typical)
100
(V C E =–4V)
–5A
Collector-Emitter Voltage V C E (V)
300
1.4
E
Weight : Approx 6.0g
a. Type No.
b. Lot No.
˚C (
A
C
125
Collector Current I C (A)
–7
00
–5
m
00
5.45±0.1
B
Collector Current I C (A)
m
A
–15
5.45±0.1
0.65 +0.2
-0.1
V CE ( sa t ) – I B Characteristics (Typical)
Collector-Emitter Saturation Voltage V C E (s at) (V )
I C – V CE Characteristics (Typical)
1.05 +0.2
-0.1
∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180)
■Typical Switching Characteristics (Common Emitter)
2
3
mp)
Tstg
ø3.2±0.1
b
θ j - a (˚C /W )
Tj
a
V
e Te
V(BR)CEO
2.0±0.1
(Cas
A
p)
–15
mp)
IC
V
µA
–100max
VEB=–5V
4.8±0.2
–30˚C
IEBO
em
V
eT
–5
e Te
V
VEBO
Cas
–180
ICBO
4.0
–160
V
19.9±0.3
VCEO
–180
4.0max
–160
20.0min
VCBO
1.8
Conditions
Symbol
(Cas
Unit
2.0
Symbol 2SA1386 2SA1386A
External Dimensions MT-100(TO3P)
(Ta=25°C)
5.0±0.2
■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics
25˚C
LAPT
100
1000 2000
Time t(ms)
Safe Operating Area (Single Pulse)
P c – T a Derating
(V C E =–12V)
130
–40
10
DC
0.1
1
Emitter Current I E (A)
18
10
–0.05
–3
–10
–50
–100
Collector-Emitter Voltage V C E (V)
2
–200
nk
1
0
0.02
si
–0.1
at
1.2SA1386
2.2SA1386A
he
Without Heatsink
Natural Cooling
ite
–1
–0.5
100
fin
20
–5
In
Collecto r Cur ren t I C ( A)
p
ith
Ty
W
Cut-o ff Fr eque ncy f T (MH Z )
–10
40
ms
Ma xim um Powe r Dissipation P C ( W)
60
50
3.5
0
Without Heatsink
0
25
50
75
100
125
Ambient Temperature Ta(˚C)
150