SANKEN 2SA1908

2SA1908
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC5100)
–10max
µA
V
IEBO
VEB=–6V
–10max
µA
–6
V
V(BR)CEO
–8
A
hFE
–120min
50min∗
V
–3
A
IC=–3A, IB=–0.3A
–0.5max
V
PC
75(Tc=25°C)
W
fT
VCE=–12V, IE=0.5A
20typ
MHz
150
°C
COB
VCB=–10V, f=1MHz
300typ
pF
–55 to +150
°C
∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180)
1.05 +0.2
-0.1
RL
(Ω)
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(A)
IB2
(A)
ton
(µs)
tstg
(µs)
tf
(µs)
–40
10
–4
–10
5
–0.4
0.4
0.14typ
1.40typ
0.21typ
I B =–10mA
0
0
–1
–2
–3
–4
–4A
0
0
–0.2
–0.4
–0.6
–0.8
0
–1.0
h FE – I C Temperature Characteristics (Typical)
(V C E =–4V)
300
DC Curr ent Gain h FE
Typ
100
50
–0.5
–1
125˚C
25˚C
100
–30˚C
50
30
–0.02
–5 –8
Transient Thermal Resistance
200
–0.1
–0.5
–0.5
4
1
0.5
–1
–5
–8
1
10
100
1000 2000
Time t(ms)
Collector Current I C (A)
f T – I E Characteristics (Typical)
–1.5
θ j-a – t Characteristics
0.2
–0.1
Collector Current I C (A)
–1.0
Base-Emittor Voltage V B E (V)
(V C E =–4V)
30
–0.02
0
Base Current I B (A)
h FE – I C Characteristics (Typical)
mp)
–2A
Collector-Emitter Voltage V C E (V)
DC Curr ent Gain h FE
–2
I C =–8A
e Te
–1
(Cas
–2
–4
mp)
–25mA
–6
e Te
–50mA
–4
–2
Cas
–7 5m A
–6
˚C (
mA
E
(V C E =–4V)
125
–100
C
Weight : Approx 6.5g
a. Type No.
b. Lot No.
–8
Collector Current I C (A)
A
θ j - a (˚C/W)
–1
m
50
Collector-Emitter Saturation Voltage V C E (s at) (V )
A
m
50
Collector Current I C (A)
–3
–2
A
3.35
1.5
I C – V BE Temperature Characteristics (Typical)
–3
m
00
4.4
B
V CE ( sat ) – I B Characteristics (Typical)
0.65 +0.2
-0.1
5.45±0.1
1.5
VCC
(V)
–8
0.8
2.15
5.45±0.1
■Typical Switching Characteristics (Common Emitter)
I C – V CE Characteristics (Typical)
1.75
–30˚C
Tstg
mp)
Tj
ø3.3±0.2
a
b
16.2
IB
VCE(sat)
3.0
IC=–50mA
VCE=–4V, IC=–3A
3.45 ±0.2
e Te
IC
5.5±0.2
(Cas
VEBO
25˚C
–120
15.6±0.2
23.0±0.3
VCEO
0.8±0.2
VCB=–120V
V
5.5
ICBO
–120
1.6
Unit
VCBO
External Dimensions FM100(TO3PF)
(Ta=25°C)
2SA1908
Unit
3.3
Symbol
Conditions
2SA1908
9.5±0.2
■Electrical Characteristics
■Absolute maximum ratings (Ta=25°C)
Symbol
Application : Audio and General Purpose
Safe Operating Area (Single Pulse)
P c – T a Derating
(V C E =–12V)
80
–10
Typ
–10
–50
–100 –150
Collector-Emitter Voltage V C E (V)
Collector Curr ent I C (A)
nk
–0.1
–5
si
36
8
40
at
Emitter Current I E (A)
5
Without Heatsink
Natural Cooling
he
1
–0.5
ite
0.5
–1
60
fin
0.05 0.1
s
In
10
m
s
ith
20
0
0.02
DC
–5
10
0m
W
Cut-o ff Fr eque ncy f T ( MH Z )
10
Ma xim um Powe r Dissipat io n P C (W)
–20
30
20
3.5
0
Without Heatsink
0
25
50
75
100
Ambient Temperature Ta(˚C)
125
150