SANKEN 2SC2837

2SC2837
Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1186)
VCB=150V
100max
µA
V
IEBO
VEB=5V
100max
µA
IC=25mA
150min
V
hFE
50min∗
VCE=4V, IC=3V
A
VCE(sat)
IC=5A, IB=0.5A
2.0max
V
100(Tc=25°C)
W
fT
VCE=12V, IE=–1A
70typ
MHz
Tj
150
°C
COB
VCB=80V, f=1MHz
60typ
pF
–55 to +150
°C
∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180)
20.0min
2
PC
RL
(Ω)
IB1
(mA)
IB2
(mA)
ton
(µs)
tstg
(µs)
tf
(µs)
12
5
–5
500
–500
0.2typ
1.4typ
0.35typ
40mA
I B =20mA
2
0
1
2
3
I C =10A
1
2
5A
0
4
0
0.5
Collector-Emitter Voltage V C E (V)
1.0
1.5
0
2.0
h FE – I C Characteristics (Typical)
(V C E =4V)
200
1
25˚C
100
–30˚C
50
20
0.02
10
0.05
0.1
0.5
f T – I E Characteristics (Typical)
1
5
10
θ j-a – t Characteristics
1
0.5
0.2
1
10
100
1000 2000
Time t(ms)
Safe Operating Area (Single Pulse)
(V C E =12V)
2
3
Collector Current I C (A)
Collector Current I C (A)
120
Transient Thermal Resistance
D C Cur r ent Gai n h F E
Typ
50
P c – T a Derating
100
30
m
s
2
10
100
Collector-Emitter Voltage V C E (V)
200
nk
Emitter Current I E (A)
–6
si
–1
50
at
0.2
–0.1
he
Without Heatsink
Natural Cooling
0.5
20
0
–0.02
1
ite
40
C
fin
60
D
5
In
80
ith
Collector Curren t I C ( A)
10
Typ
W
M aximum Power Dissipa ti on P C (W)
10
100
Cu t-off Fr eque ncy f T ( MH Z )
DC Curr ent Gain h FE
125˚C
0.1
1
Base-Emittor Voltage V B E (V)
h FE – I C Temperature Characteristics (Typical)
(V C E =4V)
20
0.02
0
Base Current I B (A)
200
100
4
p)
4
6
em
80mA
2
eT
12 0m A
6
8
as
A
(C
A
160m
(V C E =4V)
10
3
5˚C
200m
8
Collector Current I C (A)
A
12
300m
1.4
E
I C – V BE Temperature Characteristics (Typical)
Collector Current I C (A)
mA
Collector-Emitter Saturation Voltage V CE(s a t) (V )
400
C
Weight : Approx 6.0g
a. Type No.
b. Lot No.
V CE ( sat ) – I B Characteristics (Typical)
10
0.65 +0.2
-0.1
5.45±0.1
B
VB2
(V)
I C – V CE Characteristics (Typical)
0
5.45±0.1
IC
(A)
θ j - a (˚ C/W)
60
2
3
1.05 +0.2
-0.1
■Typical Switching Characteristics (Common Emitter)
VCC
(V)
ø3.2±0.1
b
IB
Tstg
a
p)
V(BR)CEO
A
Tem
V
10
se
5
IC
(Ca
VEBO
2.0±0.1
˚C
150
4.8±0.2
–30
VCEO
15.6±0.4
9.6
˚C
V
25
150
1.8
ICBO
VCBO
2.0
Unit
Symbol
External Dimensions MT-100(TO3P)
(Ta=25°C)
2SC2837
Unit
5.0±0.2
■Electrical Characteristics
Conditions
2SC2837
19.9±0.3
Symbol
4.0
■Absolute maximum ratings (Ta=25°C)
Application : Audio and General Purpose
4.0max
LAPT
3.5
0
Without Heatsink
0
25
50
75
100
125
150
Ambient Temperature Ta(˚C)
59