SANKEN 2SB1257

(2 k Ω)(6 5 0Ω) E
2SB1257
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2014)
A
–10max
µA
–60min
V
hFE
VCE=–4V, IC=–3A
2000min
IB
–1
A
VCE(sat)
IC=–3A, IB=–6mA
–1.5max
PC
25(Tc=25°C)
W
VBE(sat)
IC=–3A, IB=–6mA
–2max
V
Tj
150
°C
fT
VCE=–12V, IE=0.2A
150typ
MHz
–55 to +150
°C
COB
VCB=–10V, f=1MHz
75typ
pF
Tstg
3.3
3.0
V
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(mA)
IB2
(mA)
ton
(µs)
tstg
(µs)
tf
(µs)
–30
10
–3
–10
5
–10
10
0.4typ
0.8typ
0.6typ
–2
–1
0
–1
–2
–3
–4
–5
–3A
–1
–2A
–0.5
Collector-Emitter Voltage V C E (V)
–1
–1
–5
–10
h FE – I C Temperature Characteristics (Typical)
8000
1000
500
100
1000
12
5˚C
25
500
˚C
–3
0˚C
100
50
50
–0.1
–0.5
–1
20
–0.02
–5 –6
–0.05 –0.1
Collector Current I C (A)
–0.5
–1
–5 –6
0.7
2
at
si
nk
4
0x
he
1
Emitter Current I E (A)
1 00x 1 0
10
ite
–0.1
–0.07
–3
150x150x2
fin
Without Heatsink
Natural Cooling
40
In
–0.5
20
ith
–1
Natural Cooling
Silicone Grease
Heatsink: Aluminum
in mm
W
Co lle ctor Cu rre nt I C ( A)
s
80
s
120
m
160
DC
1000
P c – T a Derating
1m
10
Typ
100
25
–5
0.5
10
Time t(ms)
–10
0.1
1
Safe Operating Area (Single Pulse)
200
38
1
(V C E =–12V)
240
–2 –2.2
5
Collector Current I C (A)
f T – I E Characteristics (Typical)
0
0.05
–1
θ j-a – t Characteristics
Transient Thermal Resistance
5000
DC Cur r ent Gai n h F E
DC Cur r ent Gai n h F E
(V C E =–2V)
Typ
20
–0.02
0
Base-Emittor Voltage V B E (V)
(V C E =–2V)
Cut- off F req uency f T (M H Z )
0
–50
Base Current I B (mA)
h FE – I C Characteristics (Typical)
8000
5000
–2
I C =–1A
–0.6
–0.2
–6
–3
mp)
–2
θ j - a (˚ C/W)
0
(V C E =–2V)
e Te
–0.8mA
–3
E
(Cas
=–
–1.0mA
Weight : Approx 2.0g
a. Type No.
b. Lot No.
–4
–3
Maxim um Power Dissipation P C (W)
Collector Current I C (A)
–1.2 mA
–4
C
3.35
I C – V BE Temperature Characteristics (Typical)
Collector Current I C (A)
–1 .5 m A
IB
–5
0.65 +0.2
-0.1
1.5
125˚C
Collector-Emitter Saturation Voltage V C E (s at) (V )
A
mA
2.
3m
– 1 .8
4.4
B
V CE ( sat ) – I B Characteristics (Typical)
+0.2
-0.1
5.45±0.1
1.5
RL
(Ω)
0.8
2.15
1.05
VCC
(V)
–6
1.75
5.45±0.1
■Typical Switching Characteristics (Common Emitter)
I C – V CE Characteristics (Typical)
ø3.3±0.2
a
b
)
–4(Pulse–6)
IC
VEB=–6V
IC=–10mA
3.45 ±0.2
)
V(BR)CEO
5.5±0.2
Temp
IEBO
V
15.6±0.2
Temp
V
–6
µA
(Case
–60
VEBO
–10max
(Case
VCEO
VCB=–60V
–30˚C
ICBO
Unit
0.8±0.2
V
2SB1257
5.5
–60
External Dimensions FM20(TO220F)
(Ta=25°C)
Conditions
1.6
VCBO
Symbol
25˚C
Unit
9.5±0.2
2SB1257
23.0±0.3
Symbol
C
Application : Driver for Solenoid, Relay and Motor and General Purpose
■Electrical Characteristics
■Absolute maximum ratings (Ta=25°C)
B
Equivalent circuit
16.2
Darlington
50x50x2
Without Heatsink
2
–5
–10
Collector-Emitter Voltage V C E (V)
–70
0
0
25
50
75
100
125
Ambient Temperature Ta(˚C)
150