(7 0 Ω ) E 2SB1560 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2390) Ratings Unit ICBO VCB=–160V –100max µA VCEO –150 V IEBO VEB=–5V –100max µA V V V(BR)CEO IC=–30mA –150min –10 A hFE VCE=–4V, IC=–7A 5000min∗ IB –1 A VCE(sat) IC=–7A, IB=–7mA –2.5max PC 100(Tc=25°C) W VBE(sat) IC=–7A, IB=–7mA –3.0max V Tj 150 °C fr VCE=–12V, IE=2A 50typ MHz –55 to +150 °C VCB=–10V, f=1MHz 230typ pF COB 4.0 –5 IC 19.9±0.3 VEBO Tstg 15.6±0.4 9.6 1.8 Conditions V 5.0±0.2 Unit –160 2.0 Ratings Symbol External Dimensions MT-100(TO3P) (Ta=25°C) VCBO Symbol C Application : Audio, Series Regulator and General Purpose ■Electrical Characteristics (Ta=25°C) Equivalent circuit a 4.8±0.2 2.0±0.1 ø3.2±0.1 b V 2 4.0max ■Absolute maximum ratings 20.0min Darlington B 3 1.05 +0.2 -0.1 0.65 +0.2 -0.1 ∗hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000) 5.45±0.1 ■Typical Switching Characteristics (Common Emitter) VCC (V) RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (mA) IB2 (mA) ton (µs) tstg (µs) tf (µs) –70 10 –7 –10 5 –7 7 0.8typ 3.0typ 1.2typ 0 0 –2 –4 –2 0 –0.2 –6 –0.5 –1 Collector-Emitter Voltage V C E (V) –5 –10 h FE – I C Temperature Characteristics (Typical) (V C E =–4V) 50000 DC Curr ent Gain h F E DC Curr ent Gain h F E 40,000 Typ 10,000 5,000 125˚C 10000 25˚C 5000 –30˚C 1000 –1 –5 –10 500 –0.2 –0.5 Collector Current I C (A) –1 –5 –10 –10 0.1 1 5 ) 10 500 1000 2000 P c – T a Derating 100 10 DC –5 10 0m m s s ite he 50 at si nk Without Heatsink Natural Cooling fin –0.5 In –1 20 50 100 Time t(ms) ith 40 ) 0.5 W Typ Temp 1 Maxim um Power Dissipation P C (W) 80 Co lle ctor Cu rre nt I C ( A) –30 –2.5 3 Safe Operating Area (Single Pulse) 100 –2 θ j-a – t Characteristics (V C E =–12V) Cut- off F req uency f T (M H Z ) –1 Collector Current I C (A) f T – I E Characteristics (Typical) 60 0 Base-Emittor Voltage V B E (V) (V C E =–4V) –0.5 0 –50 –100 –200 Base Current I B (mA) h FE – I C Characteristics (Typical) 1,000 –0.2 –4 Temp –7A I C =–5A –1 –6 (Case –2 –10A –30˚C I B =–0.4mA –2 mp) –0.6m A –8 (Case –0.8m A (V C E =–4V) 25˚C –1.0 mA Transient Thermal Resistance Collector Current I C (A) –1. 2mA –4 –10 e Te –1 .5m A –6 –3 (Cas mA –8 I C – V BE Temperature Characteristics (Typical) 125˚C – 2 .0 1.4 E V CE ( sat ) – I B Characteristics (Typical) Collector Current I C (A) . C Weight : Approx 6.0g a. Part No. b. Lot No. θ j - a ( ˚ C/W) –2 –10 mA –10 A 5m Collector-Emitter Saturation Voltage V C E (s at ) (V ) I C – V CE Characteristics (Typical) 5.45±0.1 B –0.1 0 0.02 0.05 0.1 0.5 1 Emitter Current I E (A) 48 5 10 –0.05 –3 –5 –10 –50 –100 Collector-Emitter Voltage V C E (V) –200 3.5 0 Without Heatsink 0 25 50 75 100 125 Ambient Temperature Ta(˚C) 150