SANKEN 2SC4065

2SC4065
Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1568)
IEBO
V
V(BR)CEO
±12
A
IC
VEB=6V
60max
mA
IC=25mA
60min
V
hFE
VCE=1V, IC=6A
50min
IC=6A, IB=1.3A
0.35max
VECO=10A
2.5max
V
IB
3
A
VCE(sat)
PC
35(Tc=25°C)
W
VFEC
Tj
150
°C
fT
VCE=12V, IE=–0.5A
24typ
MHz
–55 to +150
°C
COB
VCB=10V, f=1MHz
180typ
PF
Tstg
10.1±0.2
V
1.35±0.15
1.35±0.15
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(A)
IB2
(A)
ton
(µs)
tstg
(µs)
tf
(µs)
24
4
6
10
–5
0.12
–0.12
0.6typ
1.4typ
0.4typ
I B =10mA
2
0
0
2
4
6A
0
0.005 0.01
0.1
1
0
3
0
Base-Emittor Voltage V B E (V)
h FE – I C Temperature Characteristics (Typical)
(V C E =1V)
400
100
50
10
12
100
5
5˚C
25
˚C
0
–3
50
Transient Thermal Resistance
DC Cur rent Gain h F E
Typ
˚C
10
5
1
3
0.02
10 12
0.1
Collector Current I C (A)
1
10 12
θ j-a – t Characteristics
5
1
0.5
0.2
1
10
Safe Operating Area (Single Pulse)
(V C E =12V)
s
fin
ite
si
–1
Emitter Current I E (A)
86
–5
–10 –12
nk
100x100x2
50x50x2
Without Heatsink
0.05
–0.5
at
150x150x2
10
0.1
0
–0.05 –0.1
he
Without Heatsink
Natural Cooling
20
In
0.5
30
ith
1
Natural Cooling
Silicone Grease
Heatsink: Aluminum
in mm
W
Collector Curre nt I C (A)
0m
s
DC
m
10
10
5
s
10
10
20
P c – T a Derating
Maxim um Power Dissip ation P C (W)
1m
Typ
1000
40
30
30
100
Time t(ms)
Collector Current I C (A)
f T – I E Characteristics (Typical)
1.0 1.1
0.5
Base Current I B (A)
400
DC Cur rent Gain h F E
p)
2
(V C E =1V)
Cut-o ff F requ ency f T (MH Z )
Tem
9A
3A
I C =1 A
6
h FE – I C Characteristics (Typical)
0.1
4
12A
Collector-Emitter Voltage V C E (V)
3
0.02
6
se
20mA
4
0.5
(Ca
6
8
˚C
40mA
10
1.0
θ j - a (˚ C/W)
Collector Current I C (A)
60mA
8
(V CE =1V)
12
1.3
125
100m A
10
I C – V BE Temperature Characteristics (Typical)
Collector Current I C (A)
A
Weight : Approx 2.0g
a. Type No.
b. Lot No.
B C E
V CE ( sa t ) – I B Characteristics (Typical)
Collector-Emitter Saturation Voltage V C E(s a t) (V )
A
0m
20
0m
2.4±0.2
2.2±0.2
RL
(Ω)
15
0.85 +0.2
-0.1
0.45 +0.2
-0.1
2.54
2.54
VCC
(V)
12
ø3.3±0.2
a
b
■Typical Switching Characteristics (Common Emitter)
I C – V CE Characteristics (Typical)
4.2±0.2
2.8 c0.5
e Te
mp)
e Tem
p)
V
6
µA
(Cas
60
VEBO
100max
(Cas
VCEO
VCB=60V
–30˚C
ICBO
4.0±0.2
V
Unit
0.8±0.2
60
2SC4065
25˚C
VCBO
External Dimensions FM20(TO220F)
(Ta=25°C)
Conditions
3.9
Symbol
Unit
±0.2
■Electrical Characteristics
2SC4065
E
8.4±0.2
Symbol
( 400 Ω )
Application : DC Motor Driver and General Purpose
16.9±0.3
■Absolute maximum ratings (Ta=25°C)
B
13.0min
Built-in Diode at C–E
Low VCE (sat)
C
Equivalent
circuit
3
5
10
50
Collector-Emitter Voltage V C E (V)
100
2
0
0
25
50
75
100
125
Ambient Temperature Ta(˚C)
150