SANKEN 2SD2045

2SD2045
Silicon NPN Triple Diffused Planar Transistor
VCB=120V
10max
µA
VCEO
120
V
IEBO
VEB=6V
10max
mA
6
V
V(BR)CEO
IC=10mA
120min
6(Pulse10)
A
hFE
VCE=2V, IC=3A
2000min
V
IB
1
A
VCE(sat)
IC=3A, IB=3mA
1.5max
PC
50(Tc=25°C)
W
VBE(sat)
IC=3A, IB=3mA
2.0max
V
Tj
150
°C
fT
VCE=12V, IE=–1A
50typ
MHz
°C
COB
VCB=10V, f=1MHz
70typ
pF
3.3
3.0
V
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(mA)
IB2
(mA)
ton
(µs)
tstg
(µs)
tf
(µs)
30
10
3
10
–5
3
–3
0.5typ
5.5typ
1.5typ
1
0
0
1
2
3
4
5
0.5
0.1
1
5
10
50
(V C E =2V)
10000
D C Cur r ent Gai n h F E
500
5000
12
1000
500
5˚
Transient Thermal Resistance
Typ
1000
C
˚C
25
C
0˚
–3
100
100
1
50
0.03
5 6
0.1
0.5
f T – I E Characteristics (Typical)
mp)
Temp
)
2
1
56
5
1
0.5
0.2
1
10
Collector Current I C (A)
Collector Current I C (A)
100
1000
Time t(ms)
Safe Operating Area (Single Pulse)
P c – T a Derating
(V C E =12V)
50
20
120
Typ
5
10
50
100
Collector-Emitter Voltage V C E (V)
200
20
nk
–5 –6
si
–1
at
–0.5
Emitter Current I E (A)
0.05
3
he
0
–0.05 –0.1
ite
0.1
30
fin
Without Heatsink
Natural Cooling
20
In
0.5
ith
1
40
W
Collector Cur rent I C (A)
s
40
1m
60
ms
80
DC
10
5
M aximum Power Dissipa ti on P C ( W)
10
100
Cut -off Fre quen cy f T ( MH Z )
DC Curr ent Gain h F E
1
θ j-a – t Characteristics
h FE – I C Temperature Characteristics (Typical)
10000
0.5
0
Base-Emittor Voltage V B E (V)
(V C E =2V)
0.1
0
100
Base Current I B (mA)
h FE – I C Characteristics (Typical)
50
0.03
p)
1
Collector-Emitter Voltage V C E (V)
5000
2
2A
0
6
4A
1
3
e Te
I C =8A
4
em
2
(Cas
2
5
eT
A
6
Cas
.4 m
B= 0
E
˚C (
I
3
A
Weight : Approx 2.0g
a. Type No.
b. Lot No.
125
0.5m
4
3.35
(V C E =2V)
3
Collector Current I C (A)
A
C
1.5
I C – V BE Temperature Characteristics (Typical)
θ j- a (˚C /W)
Collector Current I C (A)
0.7m
4.4
B
V CE ( sat ) – I B Characteristics (Typical)
Collector-Emitter Saturation Voltage V C E (s a t) (V )
A
A
2m
5m
20mA
1
5
0.65 +0.2
-0.1
5.45±0.1
1.5
RL
(Ω)
mA
0.8
2.15
1.05 +0.2
-0.1
VCC
(V)
6
1.75
5.45±0.1
■Typical Switching Characteristics (Common Emitter)
I C – V CE Characteristics (Typical)
ø3.3±0.2
a
b
(Case
–55 to +150
3.45 ±0.2
–30˚C
Tstg
5.5±0.2
25˚C
IC
15.6±0.2
23.0±0.3
VEBO
0.8±0.2
Unit
ICBO
5.5
2SD2045
V
1.6
Conditions
120
9.5±0.2
Unit
VCBO
Symbol
External Dimensions FM100(TO3PF)
(Ta=25°C)
2SD2045
Symbol
(2.5kΩ)(200Ω) E
Application : Driver for Solenoid, Motor and General Purpose
■Electrical Characteristics
(Ta=25°C)
C
B
16.2
Darlington
■Absolute maximum ratings
Equivalent
circuit
10
Without Heatsink
0
0
25
50
75
100
125
150
Ambient Temperature Ta(˚C)
143