(3 k Ω)(1 0 0Ω) E 2SB1259 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2081) A hFE mA –120min VCE=–4V, IC=–5A 2000min V IB –1 A VCE(sat) IC=–5A, IB=–10mA –1.5max PC 30(Tc=25°C) W VBE(sat) IC=–5A, IB=–10mA –2.0max V Tj 150 °C fT VCE=–12V, IE=0.2A 100typ MHz –55 to +150 °C COB VCB=–10V, f=1MHz 145typ pF Tstg 3.9 V 1.35±0.15 1.35±0.15 RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (mA) IB2 (mA) ton (µs) tstg (µs) tf (µs) –30 10 –3 –10 5 –6 6 0.6typ 1.6typ 0.5typ I B =–1mA –5 0 0 –1 –2 –3 –4 –5 –2 I C =–10A –5A –1 –2 0 –0.2 –6 –1 –10 –100 D C Cur r ent Gai n h F E 5000 1000 500 100 5000 12 1000 5˚C ˚C 25 500 –3 0˚C 100 50 –1 –5 20 –0.02 –10 –0.1 Collector Current I C (A) –0.5 –1 –5 –10 1 0.5 0.3 Safe Operating Area (Single Pulse) at si 10 nk 10 he 5 ite 1 150x150x2 100x100x2 50x50x2 Without Heatsink –0.05 0.5 fin –0.1 In Without Heatsink Natural Cooling ith –0.5 20 W M aximu m Power Dissipat io n P C (W) s Co lle ctor Cu rren t I C (A) 0µ s –1 –0.03 –3 1000 Natural Cooling Silicone Grease Heatsink: Aluminum in mm 10 m DC s 10 –5 100 1m Typ 100 30 –10 Emitter Current I E (A) 10 P c – T a Derating –20 0.1 1 Time t(ms) (V C E =–12V) 200 –2 –2.2 5 Collector Current I C (A) f T – I E Characteristics (Typical) Cut- off F req uency f T (MH Z ) D C Cur r ent Gai n h F E (V C E =–4V) 20000 10000 Typ 0 0.05 –1 θ j-a – t Characteristics h FE – I C Temperature Characteristics (Typical) 20000 –0.5 0 Base-Emittor Voltage V B E (V) (V C E =–4V) –0.1 0 –1000 Base Current I B (mA) h FE – I C Characteristics (Typical) 50 –0.03 –4 –1A Collector-Emitter Voltage V C E (V) 10000 –6 ) –2mA –8 Temp A (V C E =–4V) (Case –10 –10 125˚C A –3m –3 Collector Current I C (A) A –5m I C – V BE Temperature Characteristics (Typical) θ j - a (˚C /W) – m 10 B C E Transient Thermal Resistance A Weight : Approx 2.0g a. Part No. b. Lot No. V CE ( sat ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) A 0m Collector Current I C (A) –5 –2 0m 2.4±0.2 2.2±0.2 VCC (V) –15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.54 ■Typical Switching Characteristics (Common Emitter) I C – V CE Characteristics (Typical) ø3.3±0.2 a b ) –10(Pulse–15) IC –10max VEB=–6V IC=–10mA Temp V(BR)CEO 4.2±0.2 2.8 c0.5 (Case IEBO V 10.1±0.2 –30˚C V –6 µA 4.0±0.2 –120 VEBO –10max 0.8±0.2 VCEO VCB=–120V ±0.2 ICBO Unit mp) V Ratings e Te –120 External Dimensions FM20(TO220F) (Ta=25°C) Conditions (Cas VCBO Symbol 25˚C Unit 8.4±0.2 ■Electrical Characteristics (Ta=25°C) Ratings Symbol C Application : Driver for Solenoid, Relay and Motor and General Purpose 16.9±0.3 ■Absolute maximum ratings B Equivalent circuit 13.0min Darlington 2 –5 –10 –50 –100 Collector-Emitter Voltage V C E (V) –200 0 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 41